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1. 发明授权

US08497759B2 Leadless media protected fast response RTD sensor and method for making the same 失效
标题翻译：无铅介质保护快速响应RTD传感器和制作相同的方法
公开(公告)号：US08497759B2
公开(公告)日：2013-07-30
申请号：US12731427
申请日：2010-03-25
申请人： Alexander Ned , Vikram Patil , Joseph VanDeWeert , Nora Kurtz
发明人： Anthony D. Kurtz , Alexander Ned , Vikram Patil , Joseph VanDeWeert
IPC分类号： H01C3/04
CPC分类号： G01K7/183
摘要： The RTD device of the present invention is comprised of a semiconductor substrate and a substantially thin conductive metal layer disposed upon the semiconductor substrate, wherein the conductive metal has a substantially linear temperature-resistance relationship. The conductive layer is etched into a convoluted RTD pattern, which consequently increases the overall resistance and minimizes the overall mass of the RTD assembly. A contact glass cover and a conductive metal-glass frit are placed over the RTD assembly to hermetically seal the RTD. The resultant structure can be “upside-down” mounted onto a header or a flat shim so that the bottom surface of the semiconductor substrate is exposed to the external environment, thus shielding the RTD from external forces. The resultant structure is a low mass, highly conductive, leadless, and hermetically sealed RTD that accurately measures the temperature of liquids and gases and maintains fast response time in high temperatures and harsh environments.
摘要翻译：本发明的RTD器件包括半导体衬底和设置在半导体衬底上的基本上薄的导电金属层，其中导电金属具有基本上线性的耐温性关系。导电层被蚀刻成卷积的RTD图案，因此增加了整体电阻并使RTD组件的整体质量最小化。将接触玻璃盖和导电金属玻璃料放置在RTD组件上以气密地密封RTD。所得到的结构可以“倒置”安装在集管或平面垫片上，使得半导体衬底的底表面暴露于外部环境，从而屏蔽RTD免受外力的影响。所得结构是低质量，高导电性，无引线和密封的RTD，可精确测量液体和气体的温度，并在高温和恶劣环境中保持快速响应时间。

2. 发明授权

US08631707B2 Differential temperature and acceleration compensated pressure transducer 有权
标题翻译：差压和加速补偿压力传感器
公开(公告)号：US08631707B2
公开(公告)日：2014-01-21
申请号：US12751482
申请日：2010-03-31
申请人： Anthony D. Kurtz , Alexander Ned , Sorin Stefanescu , Nora Kurtz
发明人： Anthony D. Kurtz , Alexander Ned , Sorin Stefanescu , Nora Kurtz
IPC分类号： G01L9/10 , G01L15/00 , G01L7/08
CPC分类号： G01L9/0055 , G01L13/025 , G01L15/00 , G01L19/04 , Y10T29/49002
摘要： A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.
摘要翻译：公开了一种具有非压力效应补偿的双隔膜压力传感器或传感器。压力传感器可以包括位于芯片的分开部分上的两个压力传感器。第一压力传感器可以是差压传感器，其产生与一个或多个施加压力成比例的信号，并且包括其它非压力效应。第二压力传感器可以密封在密封室中，因此可以产生仅与非压力效应成比例的信号。信号可以组合以产生与所施加的压力成比例的信号，而没有非压力效应。第一和第二压力传感器可以物理和/或电隔离以改善两个压力传感器之间的密封并防止它们之间的压力泄漏。

3. 发明申请

US20070254796A1 Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers 审中-公开
标题翻译：用于防止超高压压阻传感器和换能器中的灾难性接触故障的方法和装置
公开(公告)号：US20070254796A1
公开(公告)日：2007-11-01
申请号：US11412024
申请日：2006-04-26
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： C03C8/18 , C03C8/04
CPC分类号： C03C3/062 , C03C3/064 , C03C3/083 , C03C3/085 , C03C3/091 , C03C27/044 , G01L9/0042 , G01L9/0055 , G01L19/0069
摘要： A method to prevent the catastrophic failure of electrical contacts of silicon piezoresistive transducers located on a silicon wafer at temperatures above 600° C. comprising the steps of using a lead-free glass frit to surround the contacts and bonding the sensor wafer to a glass wafer employing a lead-free glass and utilizing a modified electrostatic bonding technique to join the silicon wafer to the lead-free glass wafer to form a high temperature SOI device.
摘要翻译：一种防止在高于600℃的温度下位于硅晶片上的硅压阻传感器的电触点的灾难性故障的方法，包括以下步骤：使用无铅玻璃料围绕触点并将传感器晶片接合到玻璃晶片采用无铅玻璃并利用改进的静电接合技术将硅晶片连接到无铅玻璃晶片以形成高温SOI器件。

4. 发明申请

US20070114624A1 Moisture resistant differential pressure sensors 有权
公开(公告)号：US20070114624A1
公开(公告)日：2007-05-24
申请号：US11651796
申请日：2007-01-10
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： H01L29/84
CPC分类号： G01L19/147
摘要： A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.

5. 发明申请

US20070099392A1 Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor devices 有权
标题翻译：用于制造绝缘体上硅（SOI）半导体器件的融合键合工艺和结构
公开(公告)号：US20070099392A1
公开(公告)日：2007-05-03
申请号：US11262179
申请日：2005-10-28
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： H01L21/76
CPC分类号： H01L21/76251
摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.
摘要翻译：一种制造绝缘体上半导体器件的方法，包括：提供其上具有约200埃厚的氧化物层的第一半导体晶片; 蚀刻第一半导体晶片以在其中升高图案; 通过约200埃厚的氧化物层掺杂第一半导体晶片的凸起图案; 提供其上具有氧化物的第二半导体晶片; 并且在升高的温度下将第一半导体晶片氧化物接合到第二半导体晶片氧化物。

6. 发明授权

US06210989B1 Ultra thin surface mount wafer sensor structures and methods for fabricating same 有权
标题翻译：超薄表面贴装晶片传感器结构及其制造方法
公开(公告)号：US06210989B1
公开(公告)日：2001-04-03
申请号：US09398969
申请日：1999-09-17
申请人： Anthony D. Kurtz , Alexander Ned , Scott J. Goodman
发明人： Anthony D. Kurtz , Alexander Ned , Scott J. Goodman
IPC分类号： H01L2720
CPC分类号： G01L9/0055 , G01L19/0084
摘要： There is disclosed a semiconductor sensor device comprising a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.
摘要翻译：公开了一种半导体传感器装置，其包括具有涂覆有氧化物层的顶表面的半导体隔膜部件; P +传感器元件在隔膜的相对中心区域处熔合到氧化物层; P +手指元件融合到从传感器延伸到每个手指的隔膜的外部接触位置的氧化物层; 并且P +材料的外缘融合到氧化物层并且围绕传感器和手指。第一玻璃晶片构件在底面处与手指和边缘静电结合，以气密地密封隔膜构件的传感器和手指。第一玻璃晶片包括在传感器上方的凹陷部，并且具有多个孔，其中每个孔与接触位置处的单独手指相关联，并且每个孔小于相关联的手指与接触位置对齐，其中每个接触位置可以通过第一玻璃晶片构件中的相关孔径进入。第二玻璃晶片构件密封地联接到第一玻璃晶片的顶表面，并且具有与第一玻璃晶片构件的多个孔对准的多个孔，并且包含一组用于联接到接触位置的密封销。

7. 发明申请

US20080028863A1 High temperature pressure sensing system 有权
标题翻译：高温压力传感系统
公开(公告)号：US20080028863A1
公开(公告)日：2008-02-07
申请号：US11709639
申请日：2007-02-22
申请人： Anthony Kurtz , Wolf Landmann , Alexander Ned
发明人： Anthony Kurtz , Wolf Landmann , Alexander Ned
IPC分类号： G01L9/06
CPC分类号： G01L9/065
摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.
摘要翻译：一种高温压力感测系统（传感器），包括：由绝缘体上硅（SOI）工艺形成的压力感测压阻传感器; 可操作地耦合到压阻传感器的SOI放大器电路; 包括多个电阻的SOI增益控制器电路，当选择性地耦合到放大器时调节放大器的增益; 分别对应于电阻的多个片外触点，用于电激活相应的电阻并且使用用于SOI传感器的金属化层和适合于高温互连（接合）的SOI ASIC; 其中所述压阻传感器，放大器电路和增益控制电路适用于温度高于175摄氏度并达到250℃至300℃的环境中，并且其中整个换能器具有对核的高免疫性辐射。

8. 发明申请

US20070157735A1 High accuracy, high temperature, redundant media protected differential transducers 有权
公开(公告)号：US20070157735A1
公开(公告)日：2007-07-12
申请号：US11716289
申请日：2007-03-09
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , G01L9/0055
摘要： A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

9. 发明申请

US20070089526A1 High accuracy, high temperature, redundant media protected differential transducers 有权
公开(公告)号：US20070089526A1
公开(公告)日：2007-04-26
申请号：US11258787
申请日：2005-10-26
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , G01L9/0055
摘要： A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

10. 发明授权

US5891751A Hermetically sealed transducers and methods for producing the same 失效
标题翻译：密封式传感器及其制造方法
公开(公告)号：US5891751A
公开(公告)日：1999-04-06
申请号：US711078
申请日：1996-09-09
申请人： Anthony D. Kurtz , Alexander Ned
发明人： Anthony D. Kurtz , Alexander Ned
IPC分类号： B81B7/00 , G01L9/00 , H01L21/465
CPC分类号： B81B7/0077 , G01L9/0055 , Y10S148/012 , Y10T29/42
摘要： A reduced size, hermetically sealed semiconductor transducer and methods for fabricating the same. In a preferred embodiment, the transducer comprises a transducer wafer including a diaphragm which deflects upon the application of a force thereto. At least one semiconductor transducer element and one electrical contact are disposed on a top surface of the transducer wafer, with the electrical contact coupled to the semiconductor element and extending to a peripheral portion of the wafer. A cover member is provided that is dimensioned to surround the semiconductor element. A peripheral glass frit bond is formed between the cover member and the transducer wafer, and between the cover member and at least a portion of the electrical contact. An aperture is formed in a top portion of the cover member, positioned above a region bounded by the peripheral glass bond. This aperture functions to prevent air gap formation in the peripheral glass frit bond. A sealing member hermetically seals the aperture, whereby a vacuum is maintained between the transducer element and the cover member, the transducer element thereby being hermetically sealed from the external environment, while at least a portion of the electrical contact remains exposed to enable subsequent wire bonding thereto.
摘要翻译：尺寸减小，密封的半导体换能器及其制造方法。在优选实施例中，换能器包括换能器晶片，其包括在施加力时偏转的隔膜。至少一个半导体换能器元件和一个电触点设置在换能器晶片的顶表面上，其中电触点耦合到半导体元件并延伸到晶片的周边部分。设置有围绕半导体元件的盖构件。在盖构件和换能器晶片之间以及在盖构件和至少一部分电接触件之间形成周边玻璃料接合。在盖构件的顶部形成有孔，位于由周边玻璃接合界定的区域的上方。该孔用于防止外围玻璃料接合中的气隙形成。密封构件气密地密封孔，由此在换能器元件和盖构件之间保持真空，因此换能器元件与外部环境气密密封，同时电触点的至少一部分保持暴露以使得能够接下来的引线键合到此。

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