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    • 5. 发明申请
    • Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof
    • 可切换双端子多层钙钛矿薄膜电阻器件及其方法
    • US20100014344A1
    • 2010-01-21
    • US12586147
    • 2009-09-17
    • Naijuan WuXin ChenAlex Ignatiev
    • Naijuan WuXin ChenAlex Ignatiev
    • G11C11/00H01L45/00
    • G11C13/0007G11C2213/31H01C7/006H01L45/04H01L45/12H01L45/1233H01L45/147
    • A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
    • 可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。 多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。 在施加的电脉冲下在器件中产生可逆电阻变化。 器件的电阻变化在施加电脉冲后保持不变。 添加到器件中的缓冲层的功能包括电阻切换区域的放大率,切换器件所需的脉冲电压的降低,器件受到大脉冲冲击的损害,温度的改善以及 辐射性能和增加的设备的稳定性,允许多值存储器应用。
    • 8. 发明申请
    • Method of using a switchable resistive perovskite microelectronic device with multi-Layer thin film structure
    • 使用具有多层薄膜结构的可切换电阻钙钛矿微电子器件的方法
    • US20100134239A1
    • 2010-06-03
    • US12586143
    • 2009-09-17
    • Naijuan WuXin ChenAlex Ignatiev
    • Naijuan WuXin ChenAlex Ignatiev
    • H01C1/012
    • G11C13/0007G11C2213/31H01C7/006H01L45/04H01L45/12H01L45/1233H01L45/147
    • A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
    • 可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。 多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。 在施加的电脉冲下在器件中产生可逆电阻变化。 器件的电阻变化在施加电脉冲后保持不变。 添加到器件中的缓冲层的功能包括电阻切换区域的放大率,切换器件所需的脉冲电压的降低,器件受到大脉冲冲击的损害,温度的改善以及 辐射性能和增加的设备的稳定性,允许多值存储器应用。
    • 9. 发明授权
    • Apparatus and method to pulverize rock using a superconducting electromagnetic linear motor
    • 使用超导电磁线性电机粉碎岩石的设备和方法
    • US07634989B2
    • 2009-12-22
    • US11445916
    • 2006-06-02
    • Alex Ignatiev
    • Alex Ignatiev
    • F41B6/00F41F1/00
    • F41B6/006B02C1/00
    • A rock pulverizer device based on a superconducting linear motor. The superconducting electromagnetic rock pulverizer accelerates a projectile via a superconducting linear motor and directs the projectile at high speed toward a rock structure that is to be pulverized by collision of the speeding projectile with the rock structure. The rock pulverizer is comprised of a trapped field superconducting secondary magnet mounted on a movable car following a track, a wire wound series of primary magnets mounted on the track, and the complete magnet/track system mounted on a vehicle used for movement of the pulverizer through a mine as well as for momentum transfer during launch of the rock breaking projectile.
    • 基于超导线性电动机的岩石粉碎机装置。 超导电磁岩石粉碎机通过超导线性电机加速射弹,并将弹丸高速引导到通过超速弹丸与岩石结构碰撞而被粉碎的岩石结构。 岩石粉碎机由安装在轨道上的可移动车辆上的被捕获的场超导次级磁体,安装在轨道上的绕线系列的主磁体和安装在用于粉碎机的运动的车辆上的完整的磁体/轨道系统 通过矿井以及在发射岩石弹丸时的动量转移。
    • 10. 发明授权
    • Switchable resistive perovskite microelectronic device with multi-layer thin film structure
    • 具有多层薄膜结构的可切换电阻钙钛矿微电子器件
    • US07608467B2
    • 2009-10-27
    • US11034695
    • 2005-01-13
    • Naijuan WuXin ChenAlex Ignatiev
    • Naijuan WuXin ChenAlex Ignatiev
    • H01L21/00H01L29/76
    • G11C13/0007G11C2213/31H01C7/006H01L45/04H01L45/12H01L45/1233H01L45/147
    • A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
    • 可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。 多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。 在施加的电脉冲下在器件中产生可逆电阻变化。 器件的电阻变化在施加电脉冲后保持不变。 添加到器件中的缓冲层的功能包括电阻切换区域的放大率,切换器件所需的脉冲电压的降低,器件受到大脉冲冲击的损害,温度的改善以及 辐射性能和增加的设备的稳定性,允许多值存储器应用。