专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07583034B2 LED controller and method therefor 有权
标题翻译： LED控制器及其方法
公开(公告)号：US07583034B2
公开(公告)日：2009-09-01
申请号：US11535177
申请日：2006-09-26
申请人： Alejandro Lara-Ascorra , Stephen P. Robb , Alan R. Ball
发明人： Alejandro Lara-Ascorra , Stephen P. Robb , Alan R. Ball
IPC分类号： G09G3/32
CPC分类号： H05B33/0827
摘要： In one embodiment, a vertical N-channel transistor is coupled in a high side configuration to control a current through an LED. A control circuit operates the vertical N-channel transistor to control a value of the current.
摘要翻译：在一个实施例中，垂直N沟道晶体管以高侧配置耦合以控制通过LED的电流。控制电路操作垂直N沟道晶体管以控制电流的值。

2. 发明申请

US20080074364A1 LED CONTROLLER AND METHOD THEREFOR 有权
标题翻译： LED控制器及其方法
公开(公告)号：US20080074364A1
公开(公告)日：2008-03-27
申请号：US11535177
申请日：2006-09-26
申请人： Alejandro Lara-Ascorra , Stephen P. Robb , Alan R. Ball
发明人： Alejandro Lara-Ascorra , Stephen P. Robb , Alan R. Ball
IPC分类号： G09G3/32
CPC分类号： H05B33/0827
摘要： In one embodiment, a vertical N-channel transistor is coupled in a high side configuration to control a current through an LED.
摘要翻译：在一个实施例中，垂直N沟道晶体管以高侧配置耦合以控制通过LED的电流。

3. 发明授权

US08217706B2 Method for regulating temperature 有权
标题翻译：调节温度的方法
公开(公告)号：US08217706B2
公开(公告)日：2012-07-10
申请号：US12397444
申请日：2009-03-04
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： H01L35/00
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/3011 , H03K17/122 , H03K17/145 , H01L2924/00
摘要： A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion of the semiconductor substrate near or including a corresponding power FET. When the temperature of the semiconductor substrate near one or more of the power FETs reaches a predetermined value, the corresponding temperature sensing circuit reduces a voltage appearing on the gate of the power FET. The reduced voltage increases the on-resistance of the power FET and channels a portion of its current to others of the plurality of power FETs. The power FET continues operating but with a reduced current flow. When the temperature of the semiconductor substrate falls below the predetermined value, the gate voltage of the power FET is increased to its nominal value.
摘要翻译：一种用于管理集成电路的热性能的方法和电路。并联的温度感测电路和多个功率FET由半导体衬底制造。每个温度感测电路监测半导体衬底的部分或附近的相应功率FET的温度。当一个或多个功率FET附近的半导体衬底的温度达到预定值时，相应的温度感测电路降低了功率FET的栅极上出现的电压。降低的电压增加功率FET的导通电阻，并将其电流的一部分引导到多个功率FET中的其他功率FET。功率FET继续工作，但电流减小。当半导体衬底的温度低于预定值时，功率FET的栅极电压增加到其标称值。

4. 发明申请

US20100296210A1 TRANSIENT SUPPRESSION DEVICE AND METHOD THEREFOR 有权
标题翻译：瞬态抑制装置及其方法
公开(公告)号：US20100296210A1
公开(公告)日：2010-11-25
申请号：US12469544
申请日：2009-05-20
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： H02H9/00 , H01L21/336 , H01L21/00
CPC分类号： H01L29/7808 , H01L27/0285 , H01L27/0629 , H01L27/092 , H01L29/7803 , H03K17/302 , H03K2217/0081
摘要： In one embodiment, a semiconductor device to provide protection for electronic circuits, the semiconductor device typically includes a vertical MOS transistor, a reference circuit, and an amplifier. The amplifier amplifies the reference voltage to enable the vertical MOS transistor responsively to a transient event.
摘要翻译：在一个实施例中，提供对电子电路的保护的半导体器件，该半导体器件通常包括垂直MOS晶体管，参考电路和放大器。放大器放大参考电压，以使垂直MOS晶体管响应于瞬态事件。

5. 发明授权

US07839099B2 LED control circuit and method therefor 有权
标题翻译： LED控制电路及其方法
公开(公告)号：US07839099B2
公开(公告)日：2010-11-23
申请号：US11399523
申请日：2006-04-07
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： G05F1/00
CPC分类号： H05B33/0851
摘要： In one embodiment, an LED control circuit is configured control a current through an LED responsively to a value that is proportional to a control signal for values of the control signal that are less than a threshold value of the control signal and to control the current to a value that is proportional to the threshold value for values of the control signal that are greater than the threshold value.
摘要翻译：在一个实施例中，LED控制电路被配置为响应于与控制信号成比例的控制信号的值响应于控制信号的值而控制电流，所述值控制信号的值小于控制信号的阈值，并且控制电流与控制信号的阈值成比例的值大于阈值的值。

6. 发明授权

US07564666B2 Shunt protection circuit and method therefor 有权
标题翻译：分流保护电路及其方法
公开(公告)号：US07564666B2
公开(公告)日：2009-07-21
申请号：US11416506
申请日：2006-05-02
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： H02H3/20 , H02H9/04
CPC分类号： H05B33/089 , H01L23/62 , H01L2924/0002 , H05B33/0824 , Y02B20/341 , H01L2924/00
摘要： In one embodiment, a protection device is used to protect a circuit. The protection device has a maximum rated power dissipation that is less than a maximum rated power dissipation of the circuit that is being protected.
摘要翻译：在一个实施例中，保护装置用于保护电路。保护装置的最大额定功耗小于被保护电路的最大额定功率损耗。

7. 发明授权

US07508641B2 Method of forming an in-rush limiter and structure therefor 有权
标题翻译：形成入侵限制器及其结构的方法
公开(公告)号：US07508641B2
公开(公告)日：2009-03-24
申请号：US11144417
申请日：2005-06-06
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： H02H3/00
CPC分类号： G05F1/573
摘要： In one embodiment, an in-rush limiter is configured to control an output voltage to increase at a rate that is independent of the load that is powered by the in-rush limiter.
摘要翻译：在一个实施例中，浪涌限制器被配置为控制输出电压以独立于通过入侵限制器供电的负载的速率增加。

8. 发明授权

US08693149B2 Transient suppression device and method therefor 有权
标题翻译：瞬态抑制装置及其方法
公开(公告)号：US08693149B2
公开(公告)日：2014-04-08
申请号：US12469544
申请日：2009-05-20
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： H02H9/00
CPC分类号： H01L29/7808 , H01L27/0285 , H01L27/0629 , H01L27/092 , H01L29/7803 , H03K17/302 , H03K2217/0081
摘要： In one embodiment, a semiconductor device to provide protection for electronic circuits, the semiconductor device typically includes a vertical MOS transistor, a reference circuit, and an amplifier. The amplifier amplifies the reference voltage to enable the vertical MOS transistor responsively to a transient event.
摘要翻译：在一个实施例中，提供对电子电路的保护的半导体器件，该半导体器件通常包括垂直MOS晶体管，参考电路和放大器。放大器放大参考电压，以使垂直MOS晶体管响应于瞬态事件。

9. 发明申请

US20090160528A1 METHOD FOR REGULATING TEMPERATURE 有权
标题翻译：调节温度的方法
公开(公告)号：US20090160528A1
公开(公告)日：2009-06-25
申请号：US12397444
申请日：2009-03-04
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： H01L23/34
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/3011 , H03K17/122 , H03K17/145 , H01L2924/00
摘要： A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion of the semiconductor substrate near or including a corresponding power FET. When the temperature of the semiconductor substrate near one or more of the power FETs reaches a predetermined value, the corresponding temperature sensing circuit reduces a voltage appearing on the gate of the power FET. The reduced voltage increases the on-resistance of the power FET and channels a portion of its current to others of the plurality of power FETs. The power FET continues operating but with a reduced current flow. When the temperature of the semiconductor substrate falls below the predetermined value, the gate voltage of the power FET is increased to its nominal value.
摘要翻译：一种用于管理集成电路的热性能的方法和电路。并联的温度感测电路和多个功率FET由半导体衬底制造。每个温度感测电路监测半导体衬底的部分或附近的相应功率FET的温度。当一个或多个功率FET附近的半导体衬底的温度达到预定值时，相应的温度感测电路降低了功率FET的栅极上出现的电压。降低的电压增加功率FET的导通电阻，并将其电流的一部分引导到多个功率FET中的其他功率FET。功率FET继续工作，但电流减小。当半导体衬底的温度低于预定值时，功率FET的栅极电压增加到其标称值。

10. 发明授权

US07521985B2 Method for regulating temperature and circuit therefor 有权
标题翻译：用于调节温度和电路的方法
公开(公告)号：US07521985B2
公开(公告)日：2009-04-21
申请号：US11171018
申请日：2005-07-01
申请人： Alan R. Ball , Stephen P. Robb
发明人： Alan R. Ball , Stephen P. Robb
IPC分类号： H03K17/14
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/3011 , H03K17/122 , H03K17/145 , H01L2924/00
摘要： A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion of the semiconductor substrate near or including a corresponding power FET. When the temperature of the semiconductor substrate near one or more of the power FETs reaches a predetermined value, the corresponding temperature sensing circuit reduces a voltage appearing on the gate of the power FET. The reduced voltage increases the on-resistance of the power FET and channels a portion of its current to others of the plurality of power FETs. The power FET continues operating but with a reduced current flow. When the temperature of the semiconductor substrate falls below the predetermined value, the gate voltage of the power FET is increased to its nominal value.
摘要翻译：一种用于管理集成电路的热性能的方法和电路。并联的温度感测电路和多个功率FET由半导体衬底制造。每个温度感测电路监测半导体衬底的部分或附近的相应功率FET的温度。当一个或多个功率FET附近的半导体衬底的温度达到预定值时，相应的温度感测电路降低了功率FET的栅极上出现的电压。降低的电压增加功率FET的导通电阻，并将其电流的一部分引导到多个功率FET中的其他功率FET。功率FET继续工作，但电流减小。当半导体衬底的温度低于预定值时，功率FET的栅极电压增加到其标称值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式