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1. 发明授权

US07125806B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US07125806B2
公开(公告)日：2006-10-24
申请号：US10490107
申请日：2002-09-06
申请人： Akitoshi Harada , Koichiro Inazawa
发明人： Akitoshi Harada , Koichiro Inazawa
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31116 , H01L21/76813
摘要： An etching method comprises a step of forming a via hole structure based on a photoresist film layer (210) for forming a wiring pattern, a silicon oxide film layer (201) which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer (203) formed under the hard mask layer, wherein in the step, the organic film layer and the organic Low-k film layer are etched by using a mixture gas of N2 gas, H2 gas, and a CF gas.
摘要翻译：蚀刻方法包括形成基于用于形成布线图案的光致抗蚀剂膜层（210）的通孔结构的步骤，作为在光致抗蚀剂膜下形成的硬掩模层的氧化硅膜层（201）和有机在硬掩模层下形成的低k膜层（203），其中在该步骤中，通过使用N 2气体的混合气体蚀刻有机膜层和有机Low-k膜层，H 2气体和CF气体。

2. 发明授权

US07119011B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07119011B2
公开(公告)日：2006-10-10
申请号：US10845581
申请日：2004-05-14
申请人： Akitoshi Harada , Shin Okamoto , Koichiro Inazawa
发明人： Akitoshi Harada , Shin Okamoto , Koichiro Inazawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1026
摘要： This semiconductor device includes a substrate 60 to be processed, a first insulation film 64 arranged at a designated position on the substrate 60 to have a via-hole 71a, an organic film 65 formed on the first insulation film 64 and a second insulation film 66 formed on the organic film 65. Both of the organic film 65 and the second insulation film 66 have a trench 71b in communication with the via-hole 71a, in common. Additionally, a manufacturing method of this semiconductor device includes the processes of forming the organic film 65 on the substrate 60 to be processed, forming a film having a designated pattern on the organic film 65 while exposing a part of the organic film 65, and removing the exposed part of the organic film 65 from the substrate 60 to expose a foundation layer of the organic film 65.
摘要翻译：该半导体装置包括：被处理基板60，布置在基板60上的指定位置的具有通孔71a的第一绝缘膜64，形成在第一绝缘膜64上的有机膜65和第二绝缘膜 66形成在有机膜65上。有机膜65和第二绝缘膜66共同地具有与通孔71a连通的沟槽71b。此外，该半导体装置的制造方法包括在待加工的基板60上形成有机膜65的工序，在有机膜65的一部分露出的同时在有机膜65上形成具有指定图案的膜，从基板60露出部分有机膜65，露出有机膜65的基层。

3. 发明授权

US07608544B2 Etching method and storage medium 有权
标题翻译：蚀刻方法和存储介质
公开(公告)号：US07608544B2
公开(公告)日：2009-10-27
申请号：US11753228
申请日：2007-05-24
申请人： Akitoshi Harada
发明人： Akitoshi Harada
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/31116 , H01L21/31144
摘要： An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is executed by a substrate processing apparatus that performs plasma processing on a semiconductor wafer by plasma. The apparatus comprises a substrate accommodating chamber for accommodating the semiconductor wafer which has an oxide film and a resist film formed on the oxide film, and an upper electrode plate disposed in the substrate accommodating chamber and exposed in a processing space in the substrate accommodating chamber. At least part of the upper electrode plate is formed of a silicon-containing material. The upper electrode plate is sputtered by plasma, and the oxide film is etched by plasma.
摘要翻译：能够容易地获得希望的蚀刻形状的蚀刻方法和存储用于实现该方法的程序的计算机可读存储介质。蚀刻方法由通过等离子体对半导体晶片进行等离子体处理的基板处理装置执行。该装置包括：用于容纳半导体晶片的基板容纳室，该半导体晶片具有形成在该氧化物膜上的氧化膜和抗蚀剂膜;以及上部电极板，设置在该基板容纳室中并露出在该基板容纳室的处理空间中。上电极板的至少一部分由含硅材料形成。上电极板通过等离子体溅射，氧化膜通过等离子体进行蚀刻。

4. 发明申请

US20070275564A1 ETCHING METHOD AND STORAGE MEDIUM 有权
标题翻译：蚀刻方法和储存介质
公开(公告)号：US20070275564A1
公开(公告)日：2007-11-29
申请号：US11753228
申请日：2007-05-24
申请人： Akitoshi Harada
发明人： Akitoshi Harada
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/31116 , H01L21/31144
摘要： An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is executed by a substrate processing apparatus that performs plasma processing on a semiconductor wafer by plasma. The apparatus comprises a substrate accommodating chamber for accommodating the semiconductor wafer which has an oxide film and a resist film formed on the oxide film, and an upper electrode plate disposed in the substrate accommodating chamber and exposed in a processing space in the substrate accommodating chamber. At least part of the upper electrode plate is formed of a silicon-containing material. The upper electrode plate is sputtered by plasma, and the oxide film is etched by plasma.
摘要翻译：能够容易地获得希望的蚀刻形状的蚀刻方法和存储用于实现该方法的程序的计算机可读存储介质。蚀刻方法由通过等离子体对半导体晶片进行等离子体处理的基板处理装置执行。该装置包括：用于容纳半导体晶片的基板容纳室，该半导体晶片具有形成在该氧化物膜上的氧化膜和抗蚀剂膜;以及上部电极板，设置在该基板容纳室中并露出在该基板容纳室的处理空间中。上电极板的至少一部分由含硅材料形成。上电极板通过等离子体溅射，氧化膜通过等离子体进行蚀刻。

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