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1. 发明授权

US5118642A Method for producing semiconductors 失效
标题翻译：半导体制造方法
公开(公告)号：US5118642A
公开(公告)日：1992-06-02
申请号：US645441
申请日：1991-01-24
申请人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
发明人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
IPC分类号： C30B25/14
CPC分类号： C30B25/14 , Y10S117/902 , Y10S148/056
摘要： A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.
摘要翻译：将反应气体供给到分散室，该分散室设置在反应室下方，并且都设置在真空室内。反应物气体被分散，然后通过多个连通孔进入反应室。第二反应气体被供给到下分散室。分散后，该第二气体通过管道通过第一分散室进料并进入第一反应气体周围的反应室。所述第一反应气体从所述进料管的端部开口向下吹出，并沿着所述套环部分平行分散并均匀地分散在所述第一反应气体分散室中，并且在所述状态下，通过所述连通孔引入所述反应室。

2. 发明授权

US4979465A Apparatus for producing semiconductors 失效
标题翻译：半导体制造装置
公开(公告)号：US4979465A
公开(公告)日：1990-12-25
申请号：US457140
申请日：1989-12-26
申请人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
发明人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45591 , C30B25/14
摘要： The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.

3. 发明授权

US4951603A Apparatus for producing semiconductors 失效
标题翻译：半导体制造装置
公开(公告)号：US4951603A
公开(公告)日：1990-08-28
申请号：US243006
申请日：1988-09-12
申请人： Akira Yoshino , Yoshinori Ohmori , Toshiharu Ohnishi
发明人： Akira Yoshino , Yoshinori Ohmori , Toshiharu Ohnishi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , H01L21/00
CPC分类号： C23C16/45574 , C23C16/45508 , C23C16/45517 , C23C16/45565 , C23C16/54 , H01L21/67017
摘要： Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while the substrates are heated from above the reaction chamber. Continuous treatment of the substrates is provided with an increase in reactant gas utilization efficiency. Disturbance of reactant gas flow by thermal convection is prevented and semiconductor layers having smooth surfaces are formed.
摘要翻译：用于在真空室中在基板上连续生产半导体膜的装置。多个反应室设置在真空室内，基板由顶板支撑并转移到每个反应室，每个反应室填充有特定的反应气体混合物，同时从反应室上方加热基板。随着反应物气体的利用效率的提高，连续处理基板。通过热对流来防止反应气体流动的干扰，并形成具有平滑表面的半导体层。

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