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    • 3. 发明授权
    • Processing method for object to be processed including a pre-coating step to seal fluorine
    • 加工对象物的处理方法包括预涂步骤密封氟
    • US06479410B2
    • 2002-11-12
    • US09055910
    • 1998-04-07
    • Iku ShiotaShoichi Abe
    • Iku ShiotaShoichi Abe
    • H01L2144
    • H01L21/02131C23C16/401C23C16/4404C23C16/4405H01L21/02274H01L21/31629
    • A wafer is mounted on a mounting stand 3 that is provided with an electrostatic chuck. Then an SiOF film is formed by creating a plasma of a processing gas and heating the wafer W to approximately 350° C. while the surface of the mounting stand 3 is heated to 200° C. After ten wafers W have been processed, cleaning is performed to remove a film S that has adhered to the interior of the film-formation chamber, and then a pre-coat is formed. A protective plate 5 made of aluminum nitride is placed on the mounting stand 3 during the cleaning and pre-coating steps. The protective plate 5 protects the surface of the electrostatic chuck during the cleaning and prevents the formation of a film on the mounting stand 3 during the pre-coating. In addition, since the protective plate 5 is electrostatically attracted to the mounting stand 3 and it is also strong with respect to thermal shocks, there is no need to lower the temperature of the mounting stand 3 during the cleaning, which improves throughput.
    • 将晶片安装在设置有静电卡盘的安装台3上。 然后在安装台3的表面被加热到200℃的同时,通过产生处理气体的等离子体并将晶片W加热到大约350℃来形成SiOF膜。在处理了10个晶片W之后,清洗是 进行以去除附着在成膜室内部的膜S,然后形成预涂层。 在清洁和预涂步骤期间,在安装台3上放置由氮化铝制成的保护板5。 保护板5在清洁期间保护静电卡盘的表面,并且在预涂覆期间防止在安装支架3上形成膜。 此外,由于保护板5被静电吸引到安装台3,并且对于热冲击也是坚固的,因此在清洁期间不需要降低安装台3的温度,这提高了生产量。
    • 6. 发明授权
    • Multi-chamber system
    • 多室系统
    • US5558482A
    • 1996-09-24
    • US202100
    • 1994-02-25
    • Tutomu HirokiShoichi AbeKiyotaka Akiyama
    • Tutomu HirokiShoichi AbeKiyotaka Akiyama
    • B65H9/00B65H9/10H01L21/00H01L21/677H01L21/683B65G65/00B65G49/07
    • H01L21/67167B65H9/00B65H9/101H01L21/67236H01L21/67748H01L21/67766H01L21/6838B65H2511/51B65H2553/41Y10S414/137Y10S414/139Y10S414/141
    • A vacuum-process system comprising plural vacuum-process chambers in which substrates are processed in decompressed atmosphere, a first load lock chamber communicated with each of the vacuum-process chambers and exhausted to substantially same decompressed atmosphere as in the vacuum-process chambers, a second load lock chamber communicated with the first one and exhausted to substantially same atmosphere as in the first load lock chamber, a first carrier arranged in the first load lock chamber to carry the substrate between the first and the second load lock chamber, a first buffer assembly arranged in the first load lock chamber to temporarily hold plural substrates thereon, a second buffer assembly arranged in the second load lock chamber to temporarily hold plural substrates thereon, an assembly in the second load lock chamber to position single or plural substrates relative to their passage, and a second carrier arranged in normal atmosphere to carry plural substrates into and out of the second load lock chamber.
    • 一种真空处理系统,包括多个真空处理室,其中基板在减压气氛中进行处理;第一加载锁定室,与每个真空处理室连通并排放到与真空处理室相同的减压气氛中; 第二负载锁定室与第一负载锁定室连通并排放到与第一负载锁定室大致相同的大气;第一载体,布置在第一负载锁定室中,以将衬底运送在第一和第二负载锁定室之间;第一缓冲器 组件布置在第一加载锁定室中以暂时保持多个基板;第二缓冲组件,布置在第二加载锁定室中以暂时保持多个基板;第二加载锁定室中的组件相对于它们定位单个或多个基板 通道和布置在正常气氛中的第二载体以携带多个基板进出 的第二加载锁定室。