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1. 发明授权

US08308981B2 Phosphor and manufacturing method for the same, and light source 有权
标题翻译：磷光体及其制造方法相同，而光源
公开(公告)号：US08308981B2
公开(公告)日：2012-11-13
申请号：US12801658
申请日：2010-06-18
申请人： Akira Nagatomi , Shuji Yamashita , Tetsuya Ikuta
发明人： Akira Nagatomi , Shuji Yamashita , Tetsuya Ikuta
IPC分类号： C09K11/60 , H01L33/00
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , Y10T428/2991 , Y10T428/2993
摘要： A phosphor, which is given by a general composition formula expressed by MmAaDdOoNn:Z, (wherein element M is at least one kind of element having bivalent valency, element A is at least one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element D is Si and/or Ge, O is oxygen, N is nitrogen, and element Z is at least one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3 m+a+4/3b−2/3o), where a content of the element Fe is smaller than 200 ppm.
摘要翻译：由MmAaDdOoNn：Z表示的通式组成式给出的荧光体（其中，元素M为具有二价化合价的至少一种元素，元素A为选自以下的三价元素中的至少一种元素： Al，Ga，In，Tl，Y，Sc，P，As，Sb和Bi中，元素D为Si和/或Ge，O为氧，N为氮，元素Z为选自满足m> 0，a> 0，b> 0 o≥0和n = 2/3 m + a + 4 / 3b-2 / 3o）的稀土元素或过渡金属元素，其中元素Fe 小于200ppm。

2. 发明授权

US07476336B2 Phosphor and manufacturing method for the same, and light emitting device using the phosphor 有权
标题翻译：荧光体及其制造方法以及使用该荧光体的发光装置
公开(公告)号：US07476336B2
公开(公告)日：2009-01-13
申请号：US11149317
申请日：2005-06-10
申请人： Akira Nagatomi , Tetsuya Ikuta , Shuji Yamashita
发明人： Akira Nagatomi , Tetsuya Ikuta , Shuji Yamashita
IPC分类号： C09K11/59 , C09K11/64
CPC分类号： H05B33/14 , C09K11/0883 , C09K11/7715 , C09K11/7721 , C09K11/7728 , C09K11/7734
摘要： To provide a phosphor having an emission spectrum with a broad peak in range from green color to red color, and having excellent emission efficiency and luminance. A phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 2.5
摘要翻译：提供具有从绿色到红色的范围内具有宽峰的发射光谱并且具有优异的发光效率和亮度的荧光体。提供了一种由MmAaBbOoNn：Z表示的一般组成式给出的荧光体（其中元素M是具有二价化合价的一种以上的元素，元素A是具有三价价态的元素，元素B是满足2.5 <（a + b）/ m <4.5,0 <1，优选4种以上的元素，O为氧，N为氮，元素Z为多于一种作为活化剂的元素） a / m <2.0,2.0

3. 发明申请

US20060065878A1 Phosphor and manufacturing method for the same, and light source 有权
公开(公告)号：US20060065878A1
公开(公告)日：2006-03-30
申请号：US11211751
申请日：2005-08-26
申请人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
发明人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
IPC分类号： C09K11/08 , C09K11/54 , C09K11/66
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , Y10T428/2991 , Y10T428/2993
摘要： To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.

4. 发明申请

US20090109652A1 Phosphor and manufacturing method for the same, and light source 有权
公开(公告)号：US20090109652A1
公开(公告)日：2009-04-30
申请号：US12292889
申请日：2008-11-28
申请人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
发明人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
IPC分类号： F21V9/08 , C09K11/61
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , Y10T428/2991 , Y10T428/2993
摘要： To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.

5. 发明申请

US20100258766A1 Phosphor and manufacturing method for the same, and light source 有权
公开(公告)号：US20100258766A1
公开(公告)日：2010-10-14
申请号：US12801658
申请日：2010-06-18
申请人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
发明人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
IPC分类号： C09K11/66 , C09K11/54 , C09K11/59
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , Y10T428/2991 , Y10T428/2993
摘要： To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.

6. 发明授权

US07803286B2 Phosphor and manufacturing method for the same, and light source 有权
标题翻译：磷光体及其制造方法相同，而光源
公开(公告)号：US07803286B2
公开(公告)日：2010-09-28
申请号：US12292889
申请日：2008-11-28
申请人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
发明人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
IPC分类号： C09K11/08
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , Y10T428/2991 , Y10T428/2993
摘要： To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.
摘要翻译：为了提供具有在黄色至红色（580nm至680nm）范围内具有宽峰的发射光谱的荧光体和从激发光的近紫外/紫外至可见光的较长波长侧的优异的激发带（ 250nm至550nm），并且具有改善的发射强度。提供荧光体，其通过由MmAaBbOoNn：Z表示的一般组成式给出（其中元素M是具有二价化合价的一种以上的元素，元素A是选自组中的三价元素的一种以上的元素由Al，Ga，In，Tl，Y，Sc，P，As，Sb和Bi组成，元素B是具有四价化合价的多种元素，O是氧，N是氮，元素Z大于一种选自稀土元素或过渡金属元素的元素，满足m> 0，a> 0，b> 0 o≥0，n = 2 / 3m + a + 4 / 3b-2 / 3o）含有硼和/或氟。

7. 发明授权

US07476338B2 Phosphor and manufacturing method for the same, and light source 有权
标题翻译：磷光体及其制造方法相同，而光源
公开(公告)号：US07476338B2
公开(公告)日：2009-01-13
申请号：US11211751
申请日：2005-08-26
申请人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
发明人： Kenji Sakane , Akira Nagatomi , Masahiro Gotoh , Shuji Yamashita , Tetsuya Ikuta
IPC分类号： C09K11/63 , C09K11/61 , C09K11/59
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , Y10T428/2991 , Y10T428/2993
摘要： To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.
摘要翻译：为了提供具有在黄色至红色（580nm至680nm）范围内具有宽峰的发射光谱的荧光体和从激发光的近紫外/紫外至可见光的较长波长侧的优异的激发带（ 250nm至550nm），并且具有改善的发射强度。提供荧光体，其通过由MmAaBbOoNn：Z表示的一般组成式给出（其中元素M是多于一种具有二价化合价的元素，元素A是选自组中的三价元素的一种以上的元素由Al，Ga，In，Tl，Y，Sc，P，As，Sb和Bi组成，元素B是具有四价化合价的多种元素，O是氧，N是氮，元素Z大于一种选自稀土元素或过渡金属元素的元素，满足m> 0，a> 0，b> 0 o = 0，n = 2 / 3m + a + 4 / 3b-2 / 3o），以及还含有硼和/或氟。

8. 发明申请

US20060244356A1 Phosphor and manufacturing method for the same, and light emitting device using the phosphor 有权
标题翻译：荧光体及其制造方法以及使用该荧光体的发光装置
公开(公告)号：US20060244356A1
公开(公告)日：2006-11-02
申请号：US11149317
申请日：2005-06-10
申请人： Akira Nagatomi , Tetsuya Ikuta , Shuji Yamashita
发明人： Akira Nagatomi , Tetsuya Ikuta , Shuji Yamashita
IPC分类号： H01J1/62 , H01J63/04 , C09K11/08
CPC分类号： H05B33/14 , C09K11/0883 , C09K11/7715 , C09K11/7721 , C09K11/7728 , C09K11/7734
摘要： To provide a phosphor having an emission spectrum with a broad peak in range from green color to red color, and having excellent emission efficiency and luminance. A phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 2.5
摘要翻译：提供具有从绿色到红色的范围内具有宽峰的发射光谱并且具有优异的发光效率和亮度的荧光体。提供了一种由MmAaBbOoNn：Z表示的一般组成式给出的荧光体（其中元素M是具有二价化合价的一种以上的元素，元素A是具有三价价态的元素，元素B是满足2.5 <（a + b）/ m <4.5,0 <1，优选4种以上的元素，O为氧，N为氮，元素Z为多于一种作为活化剂的元素） a / m <2.0,2.0

9. 发明授权

US09006865B2 Epitaxial growth substrate, semiconductor device, and epitaxial growth method 有权
标题翻译：外延生长衬底，半导体器件和外延生长法
公开(公告)号：US09006865B2
公开(公告)日：2015-04-14
申请号：US13703943
申请日：2011-06-24
申请人： Tetsuya Ikuta , Daisuke Hino , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Tomohiko Shibata
IPC分类号： H01L29/20 , H01L29/12 , C30B25/18 , C30B29/40 , H01L21/02 , H01L29/10 , H01L29/778
CPC分类号： H01L29/12 , C30B25/18 , C30B29/403 , H01L21/02381 , H01L21/0243 , H01L21/02463 , H01L21/02546 , H01L21/02658 , H01L29/1075 , H01L29/2003 , H01L29/7786
摘要： In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.
摘要翻译：在Si单晶衬底上异质外延生长III族氮化物半导体时，可以抑制晶片边缘部分发生裂纹的发生。区域A是主表面之外的最外围部分，是锥形部分的斜面部分。区域B和C位于主面的同一平面（主面），作为主面的中心部的区域B（镜面部），区域C是主表面边缘部周围区域B的区域。主面具有平面取向，并且在区域B中是镜面加工的。区域B占据该Si单晶衬底的主要表面的大部分，并且在其中制造半导体器件。区域C（表面粗糙化部分）具有与区域B一样的平面取向，但是区域B是镜面精加工的，而区域C被表面粗糙化。

10. 发明授权

US08847203B2 Group III nitride epitaxial laminate substrate 有权
标题翻译： III族氮化物外延层压板
公开(公告)号：US08847203B2
公开(公告)日：2014-09-30
申请号：US13502847
申请日：2010-11-04
申请人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
发明人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
IPC分类号： H01L29/06 , H01L29/15 , H01L29/205 , H01L21/02 , H01L29/20
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/205
摘要： A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.
摘要翻译：一种III族氮化物外延层叠基板，其依次包括基板，缓冲层和主层压板，其中缓冲层依次包括初始生长层，第一超晶格层压板和第二超晶格层压板，第一超晶格层压板包括五个至 20组第一AlN层和第二GaN层，第一AlN层和第二GaN层交替层叠，并且每组第一AlN层和第二GaN层的厚度小于44nm，第二超晶格层叠体包括由AlN材料或AlGaN材料制成的多组第一层和由与第一层具有不同带隙的AlGaN材料制成的第二层，第一层和第二层交替堆叠。

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