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1. 发明授权

US07118408B2 Flat cable coupler and electrical connector assembly 有权
标题翻译：扁平电缆耦合器和电连接器组件
公开(公告)号：US07118408B2
公开(公告)日：2006-10-10
申请号：US11251153
申请日：2005-10-14
申请人： Akira Kubo , Isao Igarashi , Masata Umehara , Takashi Sekine
发明人： Akira Kubo , Isao Igarashi , Masata Umehara , Takashi Sekine
IPC分类号： H01R12/24
CPC分类号： H01R12/88 , H01R12/772
摘要： An electrical connector assembly comprises a flexible flat cable and a coupler. The flexible flat cable has a tip. A plurality of conductors is provided on a section of the tip between ends thereof. The coupler includes a first holding member mated with a second holding member. The flexible flat cable is positioned between the first and second holding members. The coupler is arranged behind the tip such that both sides of the tip are exposed. The coupler has a width longer than the section of the tip provided with the conductors.
摘要翻译：电连接器组件包括柔性扁平电缆和耦合器。柔性扁平电缆具有尖端。多个导体设置在尖端的其端部的一部分上。联接器包括与第二保持构件配合的第一保持构件。柔性扁平电缆位于第一和第二保持构件之间。联接器布置在尖端后面，使得尖端的两侧都露出。耦合器具有比设置有导体的尖端的部分更长的宽度。

2. 发明申请

US20060084316A1 Flat cable coupler and electrical connector assembly 有权
公开(公告)号：US20060084316A1
公开(公告)日：2006-04-20
申请号：US11251153
申请日：2005-10-14
申请人： Kubo Akira , Isao Igarashi , Masata Umehara , Takashi Sekine
发明人： Kubo Akira , Isao Igarashi , Masata Umehara , Takashi Sekine
IPC分类号： H01R12/24
CPC分类号： H01R12/88 , H01R12/772
摘要： An electrical connector assembly comprises a flexible flat cable and a coupler. The flexible flat cable has a tip. A plurality of conductors is provided on a section of the tip between ends thereof. The coupler includes a first holding member mated with a second holding member. The flexible flat cable is positioned between the first and second holding members. The coupler is arranged behind the tip such that both sides of the tip are exposed. The coupler has a width longer than the section of the tip provided with the conductors.

3. 发明授权

US09363882B2 Neutron generation target, device, and method 有权
标题翻译：中子生成目标，装置和方法
公开(公告)号：US09363882B2
公开(公告)日：2016-06-07
申请号：US13516112
申请日：2010-12-15
申请人： Takashi Sekine , Toshiyuki Kawashima , Hirofumi Kan , Yoneyoshi Kitagawa , Yoshitaka Mori , Hirozumi Azuma , Tatsumi Hioki , Tomoyoshi Motohiro , Yasushi Miyamoto , Naoki Nakamura
发明人： Takashi Sekine , Toshiyuki Kawashima , Hirofumi Kan , Yoneyoshi Kitagawa , Yoshitaka Mori , Hirozumi Azuma , Tatsumi Hioki , Tomoyoshi Motohiro , Yasushi Miyamoto , Naoki Nakamura
IPC分类号： H05H1/22 , H05H6/00 , G21B1/19 , G21B3/00
CPC分类号： H05H6/00 , G21B1/19 , G21B3/006 , Y02E30/16
摘要： An object is to be capable of inducing a nuclear fusion reaction at a relatively high efficiency and downsize a device. A nuclear fusion device 1 of the present invention includes a nuclear fusion target 7 including a target substrate 7a containing deuterium or tritium and a thin-film layer 7b containing deuterium or tritium stacked on the target substrate 7a, a vacuum container 5 for storing the nuclear fusion target 7, and a laser unit 3 for irradiating two successive first and second pulsed laser lights P1, P2 toward the thin-film layer 7b of the nuclear fusion target 7, and the intensity of the first pulsed laser light P1 is set to a value that is smaller than that of the second pulsed laser light P2 and allows peeling of the thin-film layer 7b from the target substrate 7a.
摘要翻译：目的是能够以相对高的效率诱导核聚变反应并且使装置小型化。本发明的核聚变装置1包括：核聚变靶7，其包含含有氘或氚的靶基板7a和层叠在目标基板7a上的含有氘或氚的薄膜层7b，存储核融合靶7和用于将两个连续的第一和第二脉冲激光P1，P2朝向核聚变靶7的薄膜层7b照射的激光单元3，将第一脉冲激光P1的强度设定为值小于第二脉冲激光P2的值，并允许薄膜层7b从目标衬底7a剥离。

4. 外观设计

USD689435S1 Electrical connector 有权
公开(公告)号：USD689435S1
公开(公告)日：2013-09-10
申请号：US29390589
申请日：2011-04-27
申请人： Takashi Sekine , Kenichi Yamaguchi
设计人： Takashi Sekine , Kenichi Yamaguchi

5. 发明授权

US08082749B2 Air conditioner 有权
标题翻译：冷气机
公开(公告)号：US08082749B2
公开(公告)日：2011-12-27
申请号：US12170572
申请日：2008-07-10
申请人： Takashi Sekine , Kenji Kobayashi , Naoki Sakamoto
发明人： Takashi Sekine , Kenji Kobayashi , Naoki Sakamoto
IPC分类号： F25B27/00
CPC分类号： F24F11/30
摘要： An air conditioner having a heat-source side unit including a compressor and a heat-source side heat exchanger, plural use-side units each having a use-side heat exchanger and an inter-unit pipe for connecting the heat-source side unit to the plural use-side units, including an auxiliary heat source unit having a water-refrigerant heat exchanger for heat-exchanging refrigerant with water, a refrigerant side of the water-refrigerant heat exchanger being selectively connectable to one of the high-pressure gas pipe and the low-pressure gas pile through one of a first change-over valve and a second change-over valve, and also connected to a liquid pipe through an expansion valve, and a controller for controlling the auxiliary heat source unit so that the water-refrigerant heat exchanger of the auxiliary heat source unit functions as an evaporator with a water side thereof serving as a heat source when some of the user-side units are under heating operation.
摘要翻译：一种具有热源侧机组的空调装置，具有压缩机和热源侧热交换器，多个使用侧机组具有利用侧热交换器和将热源侧机组连接到所述多个使用侧单元包括具有用于使制冷剂与水热交换的水 - 制冷剂热交换器的辅助热源单元，所述水 - 制冷剂热交换器的制冷剂侧可选择性地连接到所述高压气体管道以及低压气体堆积通过第一转换阀和第二转换阀中的一个，并且还通过膨胀阀连接到液体管;以及控制器，用于控制辅助热源单元，使得水辅助热源单元的制冷剂热交换器在一些用户侧单元处于加热操作时用作蒸发器，其水侧用作热源。

6. 发明授权

US08039586B1 Cerebral organic anion transporter and its gene 有权
标题翻译：脑有机阴离子转运体及其基因
公开(公告)号：US08039586B1
公开(公告)日：2011-10-18
申请号：US09787194
申请日：1999-09-20
申请人： Hitoshi Endou , Takashi Sekine , Hiroyuki Kusuhara
发明人： Hitoshi Endou , Takashi Sekine , Hiroyuki Kusuhara
IPC分类号： C07K14/705
CPC分类号： C07K14/705 , C07K14/47
摘要： A cerebral organic anion transporter OAT3 which is useful as a protein regulating the uptake/excretion of organic anionic substances in the brain; a nucleic acid having a base sequence encoding the same; and an antibody against the same. The amino acid sequence and the base sequence of the above OAT3 are shown in Sequence Listing in the description.
摘要翻译：大脑有机阴离子转运蛋白OAT3，其可用作调节脑中有机阴离子物质的摄取/排泄的蛋白质; 具有编码该碱基序列的碱基序列的核酸; 和抗体的抗体。上述OAT3的氨基酸序列和碱基序列显示在说明书的序列表中。

7. 发明申请

US20090202602A1 PHARMACEUTICAL COMPOSITION FOR APPLICATION TO NAIL 有权
标题翻译：适用于指甲的药物组合物
公开(公告)号：US20090202602A1
公开(公告)日：2009-08-13
申请号：US12159591
申请日：2006-12-26
申请人： Tomohiro Ishima , Mamoru Naruse , Hideo Kaneda , Kazuo Kanai , Takashi Sekine , Shinichi Oota , Tomonari Yoshimura
发明人： Tomohiro Ishima , Mamoru Naruse , Hideo Kaneda , Kazuo Kanai , Takashi Sekine , Shinichi Oota , Tomonari Yoshimura
IPC分类号： A01N25/00 , A61K8/18 , A61Q3/00
CPC分类号： A61K9/7061 , A61F13/02 , A61F13/105 , A61F2013/00906 , A61K9/0014 , A61K31/00 , A61K31/4174 , A61K31/4178 , A61K45/06 , A61K47/10 , A61K47/22 , A61K47/32 , A61K47/38 , A61M35/00
摘要： Since treatment effects of conventional external preparations were not satisfactory, it is aimed to provide a novel external preparation that is excellent in drug permeability to nail, capable of fully exhibiting effects of an antifungal drug, and effective for treatments of diseases such as nail mycosis and nail candidiasis, particularly, treatments for nail tinea. The external preparation of this invention is a pharmaceutical composition for nail characterized by containing an antifungal drug, alkylpyrrolidone or a derivative thereof, and a crosslinking hydrogel.
摘要翻译：由于常规外用制剂的治疗效果不能令人满意，目的在于提供一种能够充分发挥抗真菌药物效果，能够有效治疗诸如甲型真菌病等疾病的指甲药物渗透性优异的外用制剂，指甲念珠菌病，特别是指甲癣的治疗。本发明的外用制剂是用于指甲的药物组合物，其特征在于含有抗真菌药物，烷基吡咯烷酮或其衍生物和交联水凝胶。

8. 发明申请

US20090163119A1 Method for Machining Chamfer Portion of Semiconductor Wafer and Method for Correcting Groove Shape of Grinding Stone 有权
标题翻译：加工半导体晶片倒角部分的方法及修正砂轮槽形状的方法
公开(公告)号：US20090163119A1
公开(公告)日：2009-06-25
申请号：US12086330
申请日：2006-12-13
申请人： Eiichi Yamazaki , Takashi Sekine
发明人： Eiichi Yamazaki , Takashi Sekine
IPC分类号： B24B9/06
CPC分类号： H01L21/02021 , B24B9/065 , B24B53/07
摘要： According to the present invention, in a method for subjecting a roughly ground chamfer portion of a semiconductor wafer to helical grinding by relatively inclining the wafer and a second grinding stone to perform precise grinding, an edge portion of a discoid truer is formed into a vertically asymmetrical groove shape of a first grinding stone by using the first grinding stone having a vertically asymmetrical groove formed on a periphery thereof to grind the edge portion of the truer by the groove of the first grinding stone without being relatively inclined, a groove is formed on a periphery of the second grinding stone by relatively inclining the truer and the second grinding stone to subject the second grinding stone to helical grinding, and the chamfer portion of the wafer is precisely ground based on helical grinding by relatively inclining the semiconductor wafer with respect to a direction of the groove formed on the periphery of the second grinding stone. As a result, there is provided the method for machining a chamfer portion of the semiconductor wafer, which can machine the chamfer portion of the wafer into a vertically symmetrical shape when subjecting the chamfer portion of the semiconductor wafer to helical grinding, e.g. a resin grinding stone and the like.
摘要翻译：根据本发明，通过使半导体晶片的大致倒角的倒角部通过相对倾斜晶片进行螺旋磨削和第二研磨石进行精密研磨的方法中，将盘状矫正器的边缘部形成为垂直方向通过使用具有形成在其周边上的垂直不对称槽的第一研磨石，通过第一研磨石的凹槽来研磨修整器的边缘部分而不相对倾斜地在第一研磨石的不对称凹槽形状上形成凹槽，第二研磨石的周边通过相对地倾斜修整器和第二研磨石以使第二研磨石进行螺旋磨削，并且通过相对于半导体晶片相对倾斜相对于螺旋磨削而精确地研磨晶片的倒角部分形成在第二研磨石的周边上的槽的方向。结果，提供了用于加工半导体晶片的倒角部分的方法，当对半导体晶片的倒角部分进行螺旋磨削时，例如可以将晶片的倒角部分加工成垂直对称的形状。树脂研磨石等。

9. 发明申请

US20130288514A1 ELECTRICAL CONNECTION TERMINAL AND CONNECTOR USING SAME 有权
标题翻译：电气连接端子和连接器使用相同
公开(公告)号：US20130288514A1
公开(公告)日：2013-10-31
申请号：US13819502
申请日：2012-01-11
申请人： Takashi Sekine , Kenichi Yamaguchi
发明人： Takashi Sekine , Kenichi Yamaguchi
IPC分类号： H01R4/10
CPC分类号： H01R4/10 , F21K9/232 , F21V3/00 , F21V19/004 , F21V23/06 , F21Y2115/10 , H01R4/24 , H01R4/2404 , H01R4/4818 , H01R12/515 , H01R12/721
摘要： An electrical connection terminal for securely retaining a connection object without degrading connection reliability, and a connector using the electrical connection terminal. A first contacting portion adapted to cut into a lead wire of a cable to restrict displacement thereof in a counter-insertion direction is provided in the leading-end corner of a first contact piece of a terminal, and a second contacting portion with which the lead wire slidably makes contact is provided on the leading end of a second contact piece of the terminal. Disconnection of the lead wire is prevented by means of the first contacting portion and securing a sufficient area of connect with the lead wire by the second contacting portion. The second contacting portion is formed by chamfering the leading-end corner of the second contact piece. Accordingly, the leading-end side of the second contact piece need not be bent to form a curved-surface contacting portion.
摘要翻译：一种用于牢固地保持连接对象而不降低连接可靠性的电连接端子，以及使用该电连接端子的连接器。在端子的第一接触片的前端角部和第二接触部分中设置适于切割成电缆的引线以限制其沿反向插入方向的位移的第一接触部分，在端子的第二接触片的前端设有可滑动地接触的线。通过第一接触部分防止引线的断开，并且通过第二接触部分确保与引线的足够的连接区域。第二接触部分通过倒角第二接触片的前端角形成。因此，第二接触片的前端侧不需要弯曲而形成曲面接触部。

10. 发明授权

US08038511B2 Method for machining chamfer portion of semiconductor wafer and method for correcting groove shape of grinding stone 有权
标题翻译：半导体晶片的倒角部分的加工方法及修磨砂轮的形状的方法
公开(公告)号：US08038511B2
公开(公告)日：2011-10-18
申请号：US12086330
申请日：2006-12-13
申请人： Eiichi Yamazaki , Takashi Sekine
发明人： Eiichi Yamazaki , Takashi Sekine
IPC分类号： B24B1/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B53/07
摘要： According to the present invention, in a method for subjecting a roughly ground chamfer portion of a semiconductor wafer to helical grinding by relatively inclining the wafer and a second grinding stone to perform precise grinding, an edge portion of a discoid truer is formed into a vertically asymmetrical groove shape of a first grinding stone by using the first grinding stone having a vertically asymmetrical groove formed on a periphery thereof to grind the edge portion of the truer by the groove of the first grinding stone without being relatively inclined, a groove is formed on a periphery of the second grinding stone by relatively inclining the truer and the second grinding stone to subject the second grinding stone to helical grinding, and the chamfer portion of the wafer is precisely ground based on helical grinding by relatively inclining the semiconductor wafer with respect to a direction of the groove formed on the periphery of the second grinding stone. As a result, there is provided the method for machining a chamfer portion of the semiconductor wafer, which can machine the chamfer portion of the wafer into a vertically symmetrical shape when subjecting the chamfer portion of the semiconductor wafer to helical grinding, e.g. a resin grinding stone and the like.
摘要翻译：根据本发明，通过使半导体晶片的大致倒角的倒角部通过相对倾斜晶片进行螺旋磨削和第二研磨石进行精密研磨的方法中，将盘状矫正器的边缘部形成为垂直方向通过使用具有形成在其周边上的垂直不对称槽的第一研磨石，通过第一研磨石的凹槽来研磨修整器的边缘部分而不相对倾斜地在第一研磨石的不对称凹槽形状上形成凹槽，第二研磨石的周边通过相对地倾斜修整器和第二研磨石以使第二研磨石进行螺旋磨削，并且通过相对于半导体晶片相对倾斜相对于螺旋磨削而精确地研磨晶片的倒角部分形成在第二研磨石的周边上的槽的方向。结果，提供了用于加工半导体晶片的倒角部分的方法，当对半导体晶片的倒角部分进行螺旋磨削时，例如可以将晶片的倒角部分加工成垂直对称的形状。树脂研磨石等。

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