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1. 发明授权

US08680424B2 Microwave plasma processing device 有权
标题翻译：微波等离子体处理装置
公开(公告)号：US08680424B2
公开(公告)日：2014-03-25
申请号：US12457497
申请日：2009-06-12
申请人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
发明人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
IPC分类号： B23K10/00
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.
摘要翻译：微波等离子体处理装置包括：固定装置，用于将作为加工对象的基板固定在等离子体处理室的中心轴上;排气装置，用于对基板的内部和外部进行减压;金属加工气体供应部件，基板并与等离子体处理室一起形成可折入的圆柱形谐振系统，以及微波引入装置，用于将微波引入等离子体处理室以进行处理。微波密封件设置在定影装置的基板保持部分处，并且微波引入装置的连接位置位于通过引入微波而形成在处理气体供给构件上的电场强度分布的节点处。

2. 发明授权

US07170027B2 Microwave plasma processing method 有权
标题翻译：微波等离子体处理方法
公开(公告)号：US07170027B2
公开(公告)日：2007-01-30
申请号：US10550509
申请日：2004-04-12
申请人： Hideo Kurashima , Akira Kobayashi , Kouji Yamada , Tsunehisa Namiki
发明人： Hideo Kurashima , Akira Kobayashi , Kouji Yamada , Tsunehisa Namiki
IPC分类号： B23K9/00
CPC分类号： H01J37/32284 , C23C16/045 , C23C16/511 , H01J37/32192 , H05B6/80
摘要： A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.
摘要翻译：提供一种微波等离子体处理方法，其能够在待处理的表面上形成均匀的薄膜层，并且能够进行短时间的处理。在微波等离子体处理方法中，将微波引入等离子体处理室1中，将处理气体转化为等离子体，在设置在等离子体处理室13中的基体物质13上形成薄膜层，该方法包括：固定基体13与等离子体处理室1的中心轴同轴; 将等离子体处理室中的微波的驻波模式从基体的口部131向主体部133设定为TE模式或TEM模式; 并且在基础物质的底部132中设置具有TE模式和TM模式的模式。

3. 发明申请

US20060289401A1 Microwave plasma processing device and plasma processing gas supply member 有权
标题翻译：微波等离子体处理装置和等离子体处理气体供应部件
公开(公告)号：US20060289401A1
公开(公告)日：2006-12-28
申请号：US10546283
申请日：2004-03-11
申请人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
发明人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
IPC分类号： B23K9/02
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device and a gas supply member capable of forming a uniform thin film on a substrate to be processed. The microwave plasma processing device comprises fixing means of fixing a substrate to be processed onto the center axis in a plasma processing chamber, exhaust means of depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and microwave introducing means of introducing a microwave into the plasma processing chamber to process it, wherein a microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing means, and the connection position of the microwave introducing means is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.
摘要翻译：微波等离子体处理装置和能够在待加工基板上形成均匀薄膜的气体供给部件。微波等离子体处理装置包括固定装置，将待处理基板固定在等离子体处理室中的中心轴上，对基板内部和外部进行减压的排气装置，存在于基板中的金属加工气体供应部件，和等离子体处理室的可重入圆柱形谐振系统，以及将微波引入等离子体处理室进行处理的微波引入装置，其中微波密封构件设置在固定装置的基板保持部分的指定位置，并且微波引入装置的连接位置被设置在形成在等离子体处理室内部的场强分布之外的指定的弱磁场位置。

4. 发明申请

US20090250444A1 Microwave plasma processing device 有权
标题翻译：微波等离子体处理装置
公开(公告)号：US20090250444A1
公开(公告)日：2009-10-08
申请号：US12457497
申请日：2009-06-12
申请人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
发明人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
IPC分类号： B23K9/02
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.
摘要翻译：微波等离子体处理装置包括：固定装置，用于将作为加工对象的基板固定在等离子体处理室的中心轴上;排气装置，用于对基板的内部和外部进行减压;金属加工气体供应部件，基板并与等离子体处理室一起形成可折入的圆柱形谐振系统，以及微波引入装置，用于将微波引入等离子体处理室以进行处理。微波密封件设置在定影装置的基板保持部分处，并且微波引入装置的连接位置位于通过引入微波而形成在处理气体供给构件上的电场强度分布的节点处。

5. 发明授权

US07582845B2 Microwave plasma processing device and plasma processing gas supply member 有权
标题翻译：微波等离子体处理装置和等离子体处理气体供应部件
公开(公告)号：US07582845B2
公开(公告)日：2009-09-01
申请号：US10546283
申请日：2004-03-11
申请人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
发明人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima , Tsunehisa Namiki , Takeshi Aihara , Yasunori Onozawa
IPC分类号： B23K10/00
CPC分类号： H01J37/3244 , C23C16/045 , C23C16/45568 , C23C16/45578 , C23C16/511 , H01J37/32192 , H05H1/46 , H05H2001/463
摘要： A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.
摘要翻译：微波等离子体处理装置能够在待处理的基板上形成均匀的薄膜。微波等离子体处理装置包括用于将待处理基板固定在等离子体处理室中的中心轴上的定影装置，用于对基板内部和外部进行减压的排气装置，存在于基板中的金属加工气体供给部件和与等离子体处理室一起形成可折入的圆柱形谐振系统，以及用于将微波引入等离子体处理室以进行处理的微波引入装置。在定影装置的基板保持部的特定位置设置有微波密封构件，并且微波导入装置的连接位置被设定在从内部形成的场强分布的规定的弱场位置等离子体处理室。

6. 发明申请

US20070000879A1 Microwave plasma processing method 有权
公开(公告)号：US20070000879A1
公开(公告)日：2007-01-04
申请号：US10550509
申请日：2004-04-12
申请人： Hideo Kurashima , Akira Kobayashi , Kouji Yamada , Tsunehisa Namiki
发明人： Hideo Kurashima , Akira Kobayashi , Kouji Yamada , Tsunehisa Namiki
IPC分类号： B23K9/02
CPC分类号： H01J37/32284 , C23C16/045 , C23C16/511 , H01J37/32192 , H05B6/80
摘要： A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.

7. 发明授权

US06676793B2 Method and apparatus for manufacturing laminated material 有权
标题翻译：叠层材料的制造方法和装置
公开(公告)号：US06676793B2
公开(公告)日：2004-01-13
申请号：US10052574
申请日：2002-01-23
申请人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima
发明人： Akira Kobayashi , Kouji Yamada , Hideo Kurashima
IPC分类号： B32B3100
CPC分类号： B32B37/153 , B29C47/00 , B29C47/0021 , B29C47/0057 , B29C47/0066 , B29C47/02 , B29C2793/0027 , B29C2793/0063 , B29L2009/00 , B32B27/36 , B32B37/085 , B32B37/206 , B32B38/105 , B32B2309/02 , B32B2309/105 , B32B2310/0843 , B32B2311/00 , B32B2398/20 , Y10T156/1064 , Y10T156/1322 , Y10T156/1741
摘要： The present invention provides a method for manufacturing laminated material which can remove ear portions of a resin film extruded from an extruding machine and can directly laminate the resin film to a substrate and can make the processing of end portions of a laminated material after lamination unnecessary. The present invention also provides an apparatus used for such a manufacturing method. In the method for manufacturing laminated material which laminates a resin film formed by extruding molten thermoplastic resin from a T-die to a substrate, a laminating film is formed by cutting ear portions of the resin film before lamination and the laminating film is laminated to the substrate. Further, the apparatus for manufacturing laminated material according to the present invention comprises heating means which preheats a substrate, a T-die which extrudes molten thermoplastic resin as a resin film, cutting means which forms a laminating film by cutting ear portions of the resin film before lamination, lamination rolls which laminate the laminating film to the substrate, and a cooling device which quenches the formed laminated material.
摘要翻译：本发明提供一种层叠材料的制造方法，其能够除去从挤出机挤出的树脂膜的耳部，并且可以将树脂膜直接层合到基板上，并且可以使层压材料的端部在层压后的加工变得不必要。本发明还提供了一种用于这种制造方法的装置。在将通过将熔融热塑性树脂从T模挤出而形成的树脂膜层压到基板的层压材料的制造方法中，在层压之前，通过切割树脂膜的耳部形成层压膜，并将层压膜层压到基质。此外，根据本发明的层压材料的制造装置包括预热基板的加热装置，挤出作为树脂膜的熔融热塑性树脂的T形模具，通过切割树脂膜的耳部形成层压膜的切割装置在层压之前将层压膜层压到基板上的层压辊以及淬火所形成的层压材料的冷却装置。

8. 发明授权

US07488683B2 Chemical vapor deposited film based on a plasma CVD method and method of forming the film 有权
标题翻译：基于等离子体CVD法的化学气相沉积膜和形成膜的方法
公开(公告)号：US07488683B2
公开(公告)日：2009-02-10
申请号：US10550897
申请日：2004-03-23
申请人： Akira Kobayashi , Tsunehisa Namiki , Hiroko Hosono , Hideo Kurashima , Hajime Inagaki , Toshihide Ieki
发明人： Akira Kobayashi , Tsunehisa Namiki , Hiroko Hosono , Hideo Kurashima , Hajime Inagaki , Toshihide Ieki
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/045 , B05D1/62 , B05D2201/00 , B05D2490/50 , C23C16/0272 , C23C16/401 , C23C16/45523
摘要： A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.
摘要翻译：在等离子体处理室中保持待处理基板，在基板表面形成氧化硅蒸镀膜的方法，通过将有机硅化合物和氧化气体进料进入化学等离子体进行处理处理室，其中在形成气相沉积膜期间，使氧化气体的供给速率变化，同时保持将有机硅化合物气体进料到等离子体处理室中的速率恒定。形成了具有优异的粘合性，柔软性，柔韧性，阻氧性和防水性的化学气相沉积膜。

9. 发明授权

US06818310B2 Silicon oxide film 有权
标题翻译：氧化硅膜
公开(公告)号：US06818310B2
公开(公告)日：2004-11-16
申请号：US10332135
申请日：2003-01-06
申请人： Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada , Miwako Tanikawa
发明人： Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada , Miwako Tanikawa
IPC分类号： B32B2728
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/401 , C23C16/402 , Y10T428/265 , Y10T428/31667
摘要： A silicon oxide film is formed on the surfaces of a plastic substrate and contains methyl groups and methylene groups in a portion near the interface to the plastic substrate. The silicon oxide film exhibits not only excellent adhesion to the plastic substrate, softness and flexibility but also exhibits excellent gas shut-off property (gas barrier property), makes it possible to achieve excellent gas-shutoff property with a smaller film thickness than that of the conventional films, and can be mass-produced favorably.
摘要翻译：在塑料基板的表面上形成氧化硅膜，并且在与塑料基板的界面附近的部分含有甲基和亚甲基。氧化硅膜不仅具有对塑料基材的优异的粘附性，柔软性和柔软性，而且还表现出优异的气体截断性（阻气性），可以实现比膜厚小的膜厚度优异的气体截止性能常规的膜，并且可以有利地批量生产。

10. 发明申请

US20060264044A1 Chemical vapor deposited film based on a plasma cvd method and method of forming the film 有权
标题翻译：基于等离子体cvd方法的化学气相沉积膜和形成膜的方法
公开(公告)号：US20060264044A1
公开(公告)日：2006-11-23
申请号：US10550897
申请日：2004-03-23
申请人： Akira Kobayashi , Tsunehisa Namiki , Hiroko Hosono , Hideo Kurashima , Hajime Inagaki , Toshihide Ieki
发明人： Akira Kobayashi , Tsunehisa Namiki , Hiroko Hosono , Hideo Kurashima , Hajime Inagaki , Toshihide Ieki
IPC分类号： H01L21/44
CPC分类号： C23C16/045 , B05D1/62 , B05D2201/00 , B05D2490/50 , C23C16/0272 , C23C16/401 , C23C16/45523
摘要： A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.
摘要翻译：在等离子体处理室中保持待处理基板，在基板表面形成氧化硅蒸镀膜的方法，通过将有机硅化合物和氧化气体进料进入化学等离子体进行处理处理室，其中在形成气相沉积膜期间，使氧化气体的供给速率变化，同时保持将有机硅化合物气体进料到等离子体处理室中的速率恒定。形成了具有优异的粘合性，柔软性，柔韧性，阻氧性和防水性的化学气相沉积膜。

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