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1. 发明授权

US06602606B1 Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same 有权
标题翻译：具有导电膜的玻璃板，其制造方法以及使用其的光电转换装置
公开(公告)号：US06602606B1
公开(公告)日：2003-08-05
申请号：US09573736
申请日：2000-05-18
申请人： Akira Fujisawa , Masahiro Hirata , Koichiro Kiyohara , Tsuyoshi Otani , Yasunori Seto
发明人： Akira Fujisawa , Masahiro Hirata , Koichiro Kiyohara , Tsuyoshi Otani , Yasunori Seto
IPC分类号： B32B1700
CPC分类号： H01L31/022466 , H01L31/022475 , Y10T428/265
摘要： On a glass sheet, an undercoating layer and a conductive film containing tin oxide as a main component are formed suitably in this order. On the conductive film, a photoelectric conversion unit and a back electrode are formed, thus obtaining a thin film photoelectric conversion device. In the present invention, the absorption coefficient of this conductive film is decreased up to 1.2×103 cm−1 or less. In another embodiment of the present invention, the chlorine concentration in a conductive film is set to be 0.11 wt. % or lower and the fluorine concentration in the conductive film is equal to or higher than the chlorine concentration. In still another embodiment, in a wavelength of 550 nm, a conductive film is formed so that a glass sheet with a conductive film has a transmittance of at least 79% and a haze ratio of at least 4%.
摘要翻译：在玻璃板上，依次形成底涂层和含有氧化锡作为主要成分的导电膜。在导电膜上形成光电转换单元和背面电极，从而获得薄膜光电转换装置。在本发明中，该导电膜的吸收系数降低至1.2×10 3 cm -1以下。在本发明的另一个实施方案中，将导电膜中的氯浓度设定为0.11wt。％以下，导电膜中的氟浓度等于或高于氯浓度。在另一个实施例中，在550nm的波长中，形成导电膜，使得具有导电膜的玻璃板具有至少79％的透射率和至少4％的雾度比。

2. 发明授权

US06551715B1 Glass sheet with conductive film and glass article using the same 有权
标题翻译：玻璃板与导电膜和玻璃制品使用相同
公开(公告)号：US06551715B1
公开(公告)日：2003-04-22
申请号：US09691442
申请日：2000-10-18
申请人： Yasunori Seto , Akira Fujisawa , Tsuyoshi Otani , Masahiro Hirata
发明人： Yasunori Seto , Akira Fujisawa , Tsuyoshi Otani , Masahiro Hirata
IPC分类号： B32B1706
CPC分类号： C03C17/3417 , C03C17/245 , Y10T428/24942 , Y10T428/2495 , Y10T428/24967 , Y10T428/24975 , Y10T428/26 , Y10T428/263 , Y10T428/264 , Y10T428/265
摘要： When a transparent conductive film formed on a glass sheet is heat-treated in the air, its conductivity decreases. Even if the conductivity is increased by a heat treatment in a nitrogen atmosphere or the like beforehand, it decreases considerably by heating in the air during a processing step to obtain a final product. The present invention provides a glass sheet with a transparent conductive film, in which the increasing rate of its sheet resistance is 15% or lower even after heating at 450° C. in the air for three hours.
摘要翻译：当形成在玻璃板上的透明导电膜在空气中进行热处理时，其导电性降低。即使预先在氮气氛等中进行热处理来提高导电性，也可以在加工工序中在空气中加热而显着降低，得到最终产品。本发明提供一种具有透明导电膜的玻璃板，即使在空气中在450℃下加热三小时之后，其薄层电阻的增加率也为15％以下。

3. 发明申请

US20050121070A1 Method for forming thin film, substrate having transparent electroconductive film and photoelectric conversion device using the substrate 有权
标题翻译：用于形成薄膜的方法，具有透明导电膜的基板和使用该基板的光电转换装置
公开(公告)号：US20050121070A1
公开(公告)日：2005-06-09
申请号：US10497367
申请日：2002-12-03
申请人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
发明人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
IPC分类号： C03C17/245 , C03C17/34 , C23C16/02 , C23C16/40 , C23C16/54 , H01L31/18 , H01L31/00
CPC分类号： C23C16/407 , C03C17/245 , C03C17/3417 , C03C17/3452 , C03C2217/211 , C03C2217/241 , C03C2218/15 , C23C16/0272 , C23C16/0281 , C23C16/545 , H01L31/1884 , Y02E10/50
摘要： The present invention provides a thin film-forming method by which, even when a thin film containing a crystalline metal oxide as the main component is formed over a wide area within a short time utilizing a thermal decomposition method, the thickness of the thin film becomes relatively uniform. A thin film-forming method of the present invention includes forming a thin film using a raw material containing a chloride of a metal, and prior to the forming of the thin film, 1) disposing metal-containing particles on the substrate, or 2) forming, at a film deposition rate slower than a film deposition rate for the thin film, a metal-containing thin film on the substrate, and wherein, in the case of the step 2), the thin film containing the metal oxide as the main component is directly formed on the metal-containing thin film.
摘要翻译：本发明提供一种薄膜形成方法，即使使用热分解方法，即使在短时间内在广泛的区域上形成含有结晶金属氧化物作为主要成分的薄膜时，薄膜的厚度变为比较均匀。本发明的薄膜形成方法包括使用含有金属氯化物的原料形成薄膜，并且在形成薄膜之前，1）在基板上设置含金属的颗粒，或2）以比薄膜成膜速度慢的成膜速度，在基板上形成含金属的薄膜，其中，在步骤2）的情况下，以金属氧化物为主体的薄膜组分直接形成在含金属的薄膜上。

4. 发明申请

US20050029613A1 Transparent conductive film and its manufacturing method, and photoelectric transducer comprising it 有权
标题翻译：透明导电膜及其制造方法，以及包含它的光电传感器
公开(公告)号：US20050029613A1
公开(公告)日：2005-02-10
申请号：US10432505
申请日：2001-11-20
申请人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
发明人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
IPC分类号： B32B7/02 , C03C17/34 , C23C16/40 , H01B5/14 , H01B13/00 , H01L31/0224 , H01L31/0236 , H01L31/0392 , H01L31/04 , H01L31/18 , H01L21/00 , H01L31/0232
CPC分类号： H01L31/022466 , C03C17/3464 , C03C17/3482 , C03C2217/77 , C23C16/407 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/03921 , H01L31/1884 , Y02E10/50 , Y10T428/24364
摘要： A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of χ2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of χ2 type having a degree of freedom of 10-35χ2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.
摘要翻译：透明导电膜，其中当水平轴的单位为纳米时，存在于表面上的突起的高度数分布由具有3.5至15的自由度的chi 2类型的分布函数表示，高/ 宽度比数分布由具有10-35cm 2的自由度的chi2类型的分布函数表示，高度为50-350nm的突起占70％以上，突起具有高度/宽度比为0.25-1.02，占90％以上。

5. 发明授权

US07332226B2 Transparent conductive film and its manufacturing method, and photoelectric conversion device comprising it 有权
标题翻译：透明导电膜及其制造方法，以及包含它的光电转换装置
公开(公告)号：US07332226B2
公开(公告)日：2008-02-19
申请号：US10432505
申请日：2001-11-20
申请人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
发明人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
IPC分类号： B32B17/06
CPC分类号： H01L31/022466 , C03C17/3464 , C03C17/3482 , C03C2217/77 , C23C16/407 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/03921 , H01L31/1884 , Y02E10/50 , Y10T428/24364
摘要： A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of χ2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of χ2 type having a degree of freedom of 10-35χ2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.
摘要翻译：透明导电膜，其中存在于表面上的突起的高度数分布由水平轴的单位为自由度为3.5至15的奇偶校验类型的分布函数表示，纳米，高/宽比数分布由具有10-35℃2的自由度的chi <2>类型的分布函数表示，所述突起的高度 50-350nm占70％以上，高/宽比为0.25-1.02的突起占90％以上。

6. 发明申请

US20050276987A1 Method forming transparent conductive film, transparent conductive film, glass substrate including the same and photoelectric conversion device using that glass substrate 审中-公开
标题翻译：形成透明导电膜的方法，透明导电膜，包括其的玻璃基板和使用该玻璃基板的光电转换装置
公开(公告)号：US20050276987A1
公开(公告)日：2005-12-15
申请号：US11197139
申请日：2005-08-04
申请人： Akira Fujisawa , Koichiro Kiyohara , Masahiro Hirata , Kiyotaka Ichiki , Toru Sawada
发明人： Akira Fujisawa , Koichiro Kiyohara , Masahiro Hirata , Kiyotaka Ichiki , Toru Sawada
IPC分类号： C03C17/00 , C03C17/245 , C03C17/34 , C23C16/40 , C23C16/54 , H01L31/18 , B32B17/06
CPC分类号： C23C16/407 , C03C17/002 , C03C17/2453 , C03C17/3417 , C03C2217/211 , C03C2217/213 , C03C2218/152 , C23C16/545 , H01L31/1884 , Y02E10/50
摘要： The present invention presents a method for forming a transparent conductive film whose principal component is tin oxide by so-called CVD on a glass ribbon, preventing the generation of giant crystal grains in the tin oxide, while ensuring that the concentration of carbon is low, or in other words, the absorption coefficient at 400 to 550 nm wavelength is low. In accordance with the invention, the method for forming a transparent conductive film whose principal component is tin oxide by CVD on a glass ribbon includes forming the transparent conductive film at a film deposition speed of 3000 to 7000 nm/min using a raw material gas including 0.5 to 2.0 mol % of an organic tin compound.
摘要翻译：本发明提供了一种通过所谓的CVD在玻璃带上形成主要成分为氧化锡的透明导电膜的方法，防止了氧化锡中的巨晶粒的产生，同时确保碳的浓度低，或换句话说，波长400〜550nm的吸收系数低。根据本发明，通过在玻璃带上通过CVD形成主要成分为氧化锡的透明导电膜的方法包括：以3000-7000nm / min的成膜速度形成透明导电膜，该原料气体包括 0.5〜2.0摩尔％的有机锡化合物。

7. 发明授权

US08093490B2 Method for forming thin film, substrate having transparent electroconductive film and photoelectric conversion device using the substrate 有权
标题翻译：用于形成薄膜的方法，具有透明导电膜的基板和使用该基板的光电转换装置
公开(公告)号：US08093490B2
公开(公告)日：2012-01-10
申请号：US10497367
申请日：2002-12-03
申请人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
发明人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
IPC分类号： H01L31/00
CPC分类号： C23C16/407 , C03C17/245 , C03C17/3417 , C03C17/3452 , C03C2217/211 , C03C2217/241 , C03C2218/15 , C23C16/0272 , C23C16/0281 , C23C16/545 , H01L31/1884 , Y02E10/50
摘要： The present invention provides a thin film-forming method by which, even when a thin film containing a crystalline metal oxide as the main component is formed over a wide area within a short time utilizing a thermal decomposition method, the thickness of the thin film becomes relatively uniform. A thin film-forming method of the present invention includes forming a thin film using a raw material containing a chloride of a metal, and prior to the forming of the thin film, 1) disposing metal-containing particles on the substrate, or 2) forming, at a film deposition rate slower than a film deposition rate for the thin film, a metal-containing thin film on the substrate, and wherein, in the case of the step 2), the thin film containing the metal oxide as the main component is directly formed on the metal-containing thin film.
摘要翻译：本发明提供一种薄膜形成方法，即使使用热分解方法，即使在短时间内在广泛的区域上形成含有结晶金属氧化物作为主要成分的薄膜时，薄膜的厚度变为比较均匀。本发明的薄膜形成方法包括使用含有金属氯化物的原料形成薄膜，并且在形成薄膜之前，1）在基板上设置含金属的颗粒，或2）以比薄膜成膜速度慢的成膜速度，在基板上形成含金属的薄膜，其中，在步骤2）的情况下，以金属氧化物为主体的薄膜组分直接形成在含金属的薄膜上。

8. 发明申请

US20060046026A1 Transparent conductive film and its manufacturing method, and photoelectric conversion device comprising it 审中-公开
标题翻译：透明导电膜及其制造方法，以及包含它的光电转换装置
公开(公告)号：US20060046026A1
公开(公告)日：2006-03-02
申请号：US11246756
申请日：2005-10-07
申请人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
发明人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
IPC分类号： B05D3/02 , D06N7/00 , B32B17/06
CPC分类号： H01L31/022466 , C03C17/3464 , C03C17/3482 , C03C2217/77 , C23C16/407 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/03921 , H01L31/1884 , Y02E10/50 , Y10T428/24364
摘要： A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of X2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of X2 type having a degree of freedom of 10-35X2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.
摘要翻译：透明导电膜，其中存在于表面上的突起的高度数分布由具有3.5至15的自由度的X 2类型的分布函数表示，当水平轴的单位为纳米，高/宽比数分布由具有10-35×2的自由度的X 2类型的分布函数表示，凸起的高度为 50-350nm占70％以上，高/宽比为0.25-1.02的突起占90％以上。

9. 发明授权

US06444898B1 Transparent layered product and glass article using the same 有权
标题翻译：透明层压产品和使用其的玻璃制品
公开(公告)号：US06444898B1
公开(公告)日：2002-09-03
申请号：US09594263
申请日：2000-06-15
申请人： Akira Fujisawa , Masahiro Hirata , Tsuyoshi Otani , Akihiko Hattori
发明人： Akira Fujisawa , Masahiro Hirata , Tsuyoshi Otani , Akihiko Hattori
IPC分类号： H01L3104
CPC分类号： C03C17/3411 , C03C17/23 , C03C2217/229 , C03C2217/77 , F24S80/52 , F24S2023/88 , Y02E10/40 , Y10T428/24355 , Y10T428/24364 , Y10T428/265
摘要： A transparent layered product in which the ratio of a refractive-index transition layer at the surface of a coating film is set to be a suitable ratio for increasing light transmittance is provided. In a coating film with a rough surface formed on a glass sheet, the thickness of a transition layer in which the refractive index varies continuously in its thickness direction is set to be in a range between 13% and 65% of the thickness of a layer having a substantially constant refractive index in the coating film.
摘要翻译：提供了将涂膜表面的折射率过渡层的比例设定为提高透光率的合适比例的透明层叠体。在玻璃板上形成有粗糙面的涂膜中，折射率在厚度方向连续变化的过渡层的厚度设定在层的厚度的13％〜65％的范围内在涂膜中具有基本恒定的折射率。

10. 发明授权

US06504139B1 Substrate for photoelectric conversion device, method of manufacturing the same, and photoelectric conversion device using the same 有权
标题翻译：光电转换装置用基板及其制造方法以及使用该基板的光电转换装置
公开(公告)号：US06504139B1
公开(公告)日：2003-01-07
申请号：US09579757
申请日：2000-05-26
申请人： Masahiro Hirata , Tsuyoshi Otani , Akira Fujisawa , Hodaka Norimatsu
发明人： Masahiro Hirata , Tsuyoshi Otani , Akira Fujisawa , Hodaka Norimatsu
IPC分类号： H01J4014
CPC分类号： H01L31/1884 , C03C17/3417 , H01L31/02363 , H01L31/02366 , H01L31/03921 , Y02E10/50
摘要： A substrate for a photoelectric conversion device that is effective in trapping light in a photovoltaic layer and can be manufactured by industrial mass-production, a method of manufacturing the same, and a photoelectric conversion device using the same. On a glass sheet containing an alkaline component, a first undercoating film containing tin oxide as a main component, a second undercoating film, and a conductive film containing tin oxide as a main component are formed in this order, thus obtaining a substrate. The first undercoating film is formed by a thermal decomposition oxidation reaction of coating-film forming materials containing chlorine on glass with a temperature of at least 600° C. In the first undercoating film, holes are formed without an after-treatment. The surface of the conductive film above the holes has larger irregularities, thus scattering incident light on a photovoltaic unit. Further, on the photovoltaic unit, a back electrode is formed, thus obtaining a photoelectric conversion device.
摘要翻译：一种用于光电转换装置的基板，其有效地捕获光伏层中的光并且可以通过工业量产制造，其制造方法和使用该光电转换装置的光电转换装置。在含有碱性成分的玻璃片上，依次形成含有氧化锡作为主要成分的第一底涂膜，第二底涂膜和含有氧化锡作为主要成分的导电膜，得到基材。第一底涂膜通过在玻璃上含有氯的涂膜形成材料在至少600℃的温度下进行热分解氧化反应而形成。在第一底涂膜中，形成无后处理的孔。孔上方的导电膜的表面具有较大的不规则性，从而将入射光散射到光电单元上。此外，在光电单元上形成背面电极，从而获得光电转换装置。

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