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    • 2. 发明授权
    • Method of producing thick-film gas sensor element having improved
stability
    • 具有提高稳定性的厚膜气体传感器元件的制造方法
    • US5202154A
    • 1993-04-13
    • US565994
    • 1990-08-13
    • Toshitaka MatsuuraKeizo FurusakiMineji NasuAkio Takami
    • Toshitaka MatsuuraKeizo FurusakiMineji NasuAkio Takami
    • G01N27/12
    • G01N27/12
    • The invention relates to a method of producing a gas sensor element having a porous film formed by a thick-film technique on a ceramic substrate surface so as to cover selected portions of electrode films precedingly formed on the substrate surface. The electrode material is a noble metal such as platinum. Both the electrode films and the gas sensitive porous thick-film are formed by known methods. To improve the contact between the gas sensitive porous thick-film and the electrode films both mechanically and electrically and stabilize the internal resistance of the sensor element by depositing a noble metal such as platinum at the interface between the porous thick-film and each electrode film, the porous thick-film is impregnated with a solution of a noble metal compound such as chloroplatinic acid and thereafter maintained in a reducing gas atmosphere having a controlled humidity in the range from 5 to 90% (relative humidity) at a temperature in the range from 10.degree. C. to 135.degree. C.
    • 本发明涉及一种制造气体传感器元件的方法,该气体传感器元件具有通过厚膜技术在陶瓷基板表面上形成的多孔膜,以覆盖在基板表面上形成的电极膜的选定部分。 电极材料是贵金属如铂。 通过已知的方法形成电极膜和气敏多孔厚膜。 为了通过机械和电气来改善气体敏感性多孔厚膜和电极膜之间的接触,并且通过在多孔厚膜和每个电极膜之间的界面上沉积贵金属如铂来稳定传感器元件的内阻 多孔厚膜用氯铂酸等贵金属化合物的溶液浸渍,然后保持在5〜90%(相对湿度)范围内的受控湿度的还原气体气氛中,温度范围 从10℃到135℃