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1. 发明申请

US20090294758A1 ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：含ZnO的半导体层，其制造方法和半导体发光器件
公开(公告)号：US20090294758A1
公开(公告)日：2009-12-03
申请号：US12540772
申请日：2009-08-13
申请人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00 , H01L29/22 , H01L21/36
CPC分类号： H01S5/347 , B82Y20/00 , H01L33/285
摘要： A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.
摘要翻译：掺有Se的含ZnO半导体层在视觉上具有发光峰值波长，并且具有与ZnO的带隙相当的带隙。

2. 发明申请

US20090236598A1 ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译： ZnO层和半导体发光器件
公开(公告)号：US20090236598A1
公开(公告)日：2009-09-24
申请号：US12428567
申请日：2009-04-23
申请人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/285 , H01L21/0237 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L33/16 , Y10S438/914 , Y10S438/918
摘要： A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.
摘要翻译：提供了可以获得长于蓝色（例如420nm）的波长的发光并具有新颖结构的ZnO层。通过将S掺杂到ZnO层中可以获得比ZnO的带隙窄0.6eV或更大的过渡能。

3. 发明申请

US20100181550A1 Manufacture method for ZnO based semiconductor crystal and light emitting device using same 有权
标题翻译：基于ZnO的半导体晶体的制造方法和使用它的发光器件
公开(公告)号：US20100181550A1
公开(公告)日：2010-07-22
申请号：US12749401
申请日：2010-03-29
申请人： Hiroshi KOTANI , Michihiro SANO , Hiroyuki KATO , Akio OGAWA
发明人： Hiroshi KOTANI , Michihiro SANO , Hiroyuki KATO , Akio OGAWA
IPC分类号： H01L33/00
CPC分类号： H01L21/02576 , H01L21/0237 , H01L21/02403 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02631 , H01L33/0083
摘要： A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).
摘要翻译：一种氧化锌（ZnO）系半导体晶体的制造方法，其特征在于，提供具有Zn极性面的基板，并且在所述衬底的Zn极性平面上使至少锌（Zn）和氧（O）反应，以在富锌条件下在所述衬底的Zn极性平面上生长ZnO基半导体晶体。（a）在基板的Zn极性平面上形成n型ZnO缓冲层。（b）在n型ZnO缓冲层的表面上形成n型ZnO层。（c）在n型ZnO层的表面上形成n型ZnMgO层。（d）通过交替层叠ZnO层和ZnMgO层，在n型ZnMgO层的表面上形成ZnO / ZnMgO量子阱层。（e）在ZnO / ZnMgO量子阱层的表面上形成p型ZnMgO层。（f）在p型ZnMgO层的表面上形成p型ZnO层。（g）在n型ZnO层和p型ZnO层上形成电极。在步骤（b），在富锌条件下形成n型ZnO层。

4. 发明申请

US20110089418A1 ZINC OXIDE BASED COMPOUND SEMICONDUCTOR DEVICE 有权
标题翻译：基于氧化锌的化合物半导体器件
公开(公告)号：US20110089418A1
公开(公告)日：2011-04-21
申请号：US12907127
申请日：2010-10-19
申请人： Tomofumi YAMAMURO , Hiroyuki KATO , Akio OGAWA
发明人： Tomofumi YAMAMURO , Hiroyuki KATO , Akio OGAWA
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/02554 , H01L21/0237 , H01L21/02403 , H01L21/02472 , H01L21/02483 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L33/0087 , H01L33/285
摘要： In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants.
摘要翻译：在基于ZnO的化合物半导体器件中，在掺杂有n型掺杂剂的ZnO基n型层3和有源层4之间插入氮（N）掺杂（Mg）ZnO：N层作为扩散阻挡层9 或p型层5.扩散阻挡层9防止n型掺杂剂扩散到有源层4或p型层5. ZnO基化合物半导体器件的有源层4的结晶质量不是由于n型掺杂剂的扩散而劣化。

5. 发明申请

US20070149852A1 ENDOSCOPE 审中-公开
公开(公告)号：US20070149852A1
公开(公告)日：2007-06-28
申请号：US11682652
申请日：2007-03-06
申请人： Toshiaki NOGUCHI , Sumihiro UCHIMURA , Tatsuya FURUKAWA , Masahiro KAWAUCHI , Fumiyuki ONODA , Hiroki MORIYAMA , Ryuichi TOYAMA , Hiroshi NIWA , Hisashi KUROSHIMA , Hitoshi HASEGAWA , Eiri SUZUKI , Akio OGAWA , Masanori GOCHO , Noriaki ITO , Satoshi ITOYA
发明人： Toshiaki NOGUCHI , Sumihiro UCHIMURA , Tatsuya FURUKAWA , Masahiro KAWAUCHI , Fumiyuki ONODA , Hiroki MORIYAMA , Ryuichi TOYAMA , Hiroshi NIWA , Hisashi KUROSHIMA , Hitoshi HASEGAWA , Eiri SUZUKI , Akio OGAWA , Masanori GOCHO , Noriaki ITO , Satoshi ITOYA
IPC分类号： A61B1/00
CPC分类号： G02B23/2476 , A61B1/00082 , A61B1/00147 , A61B1/0051 , A61B1/0055
摘要： An endoscope is provided which has good operability, such as ease of varying the rigidity of an insertion portion, as well as a lighter-weight bending mechanism for changing the shape of a bending portion. The endoscope according to the present invention comprises an insertion portion to be inserted into a subject, an electroconductive expanding/contracting member which can expand/contract the insertion portion in the lengthwise direction and which is for expanding/contracting according to the state of voltage application, and electrodes for applying the voltage supplied from a power source to the electroconductive expanding/contracting member.
摘要翻译：提供具有良好可操作性的内窥镜，例如易于改变插入部的刚性，以及用于改变弯曲部分的形状的较轻重量的弯曲机构。根据本发明的内窥镜包括插入到被检体内的插入部，能够根据电压施加状态使插入部沿长度方向伸缩的导电性扩张收缩构件以及用于将从电源提供的电压施加到导电膨胀/收缩构件的电极。

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