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1. 发明授权

US4694317A Solid state imaging device and process for fabricating the same 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US4694317A
公开(公告)日：1987-09-15
申请号：US790015
申请日：1985-10-22
申请人： Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri , Yoshihiro Ono , Mitsuo Saitou , Hiroshi Tamura , Mitsuru Ikeda
发明人： Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri , Yoshihiro Ono , Mitsuo Saitou , Hiroshi Tamura , Mitsuru Ikeda
IPC分类号： H01L27/146 , H01L31/0224 , H01L45/00 , H01L23/48 , H01L27/14 , H01L29/06
CPC分类号： H01L31/022466 , H01L27/14665
摘要： A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.
摘要翻译：一种具有在半导体衬底上形成的扫描电路和光电导膜的固态成像器件及其形成方法，其中实现基本上不混色的高分辨率。在半导体衬底上形成用于提供多个电极的电极层，并且在电极层上形成光电导膜。在光电导膜上产生第一透明电极，然后在对应于像素的第一透明电极层上形成抗蚀剂图案。根据抗蚀剂图案蚀刻第一透明层和光电导膜，以空间隔离第一透明层和光电导膜中的相邻像素。使用抗蚀剂图案，通过蚀刻来隔离相邻像素，其中设置在第一透明电极层和分离像素之间的光电导膜的电极层的那部分。

2. 发明授权

US4735908A Process for fabricating solid-state imaging device 失效
标题翻译：制造固态成像装置的方法
公开(公告)号：US4735908A
公开(公告)日：1988-04-05
申请号：US77157
申请日：1987-07-24
申请人： Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri , Yoshihiro Ono , Mitsuo Saitou , Hiroshi Tamura , Mitsuru Ikeda
发明人： Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri , Yoshihiro Ono , Mitsuo Saitou , Hiroshi Tamura , Mitsuru Ikeda
IPC分类号： H01L27/146 , H01L31/0224 , H01L21/283
CPC分类号： H01L31/022466 , H01L27/14665
摘要： A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.
摘要翻译：一种具有在半导体衬底上形成的扫描电路和光电导膜的固态成像器件及其形成方法，其中实现基本上不混色的高分辨率。在半导体衬底上形成用于提供多个电极的电极层，并且在电极层上形成光电导膜。在光电导膜上产生第一透明电极，然后在对应于像素的第一透明电极层上形成抗蚀剂图案。根据抗蚀剂图案蚀刻第一透明层和光电导膜，以空间隔离第一透明层和光电导膜中的相邻像素。使用抗蚀剂图案，通过蚀刻来隔离相邻像素，其中设置在第一透明电极层和分离像素之间的光电导膜的电极层的那部分。

3. 发明授权

US4739384A Solid-state imaging device with polycrystalline film 失效
标题翻译：具有多晶膜的固态成像装置
公开(公告)号：US4739384A
公开(公告)日：1988-04-19
申请号：US790014
申请日：1985-10-22
申请人： Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri
发明人： Akio Higashi , Haruji Shinada , Kazuhiro Kawajiri
IPC分类号： H01L27/146 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.
摘要翻译：通过使用多层结构，基本上消除了在光电导层中形成缺陷的可能性的固态成像装置。在形成由半导体衬底上的各个电极和透明电极限定的多个像素构成的扫描电路的半导体衬底上依次形成光电导膜单元和透明电极。光电导膜单元由在半导体衬底上依次设置的多晶硅膜和非晶硅膜构成。

4. 发明授权

US4714950A Solid-state photo sensor device 失效
标题翻译：固态光电传感器装置
公开(公告)号：US4714950A
公开(公告)日：1987-12-22
申请号：US749400
申请日：1985-06-27
申请人： Kazuhiro Kawajiri , Hiroshi Tamura , Haruji Shinada , Mitsuo Saito , Yuzo Mizobuchi
发明人： Kazuhiro Kawajiri , Hiroshi Tamura , Haruji Shinada , Mitsuo Saito , Yuzo Mizobuchi
IPC分类号： H01L31/10 , H01L27/146 , H01L31/0376 , H01L31/09 , H01L31/103 , H01L27/14 , H01L31/00
CPC分类号： H01L31/03762 , H01L27/14665 , H01L31/095 , H01L31/103 , Y02E10/548
摘要： A solid-state photo sensor device includes a first electrode layer for allowing light to pass therethrough, a first amorphous silicon layer of one conductivity type formed below the first electrode layer, a second amorphous silicon layer of a conductivity type, other than the one conductivity type, disposed below the first amorphous silicon layer, and an output circuit for delivering in the form of an electric current photocarriers excited at least in the second amorphous silicon layer. The first and second amorphous silicon layers each contain inpurity elements whose concentration ranges from about 0 molPPM to 200 molPPM. The output circuit delivers as an electric current also photocarriers excited in the first amorphous silicon layer.
摘要翻译：固态光传感器装置包括：第一电极层，用于允许光通过;第一非导电类型的第一非晶硅层，形成在第一电极层的下方;导电型的第二非晶硅层，除了一个电导率配置在第一非晶硅层的下方，以及输出电路，用于以至少在第二非晶硅层中激发的电流光载流子的形式进行输送。第一和第二非晶硅层各自含有浓度范围为约0molPPM至200molPPM的不纯度元素。输出电路作为电流传输也在第一非晶硅层中激发的光载流子。

5. 发明授权

US5233382A Range finding device unaffected by environmental conditions 失效
标题翻译：测距装置不受环境条件的影响
公开(公告)号：US5233382A
公开(公告)日：1993-08-03
申请号：US862177
申请日：1992-04-02
申请人： Isao Taniguchi , Kazuhiro Kawajiri , Hiroshi Tamura
发明人： Isao Taniguchi , Kazuhiro Kawajiri , Hiroshi Tamura
IPC分类号： G01C3/08 , G01S11/12 , G02B7/34
CPC分类号： G01S11/12 , G01C3/085 , G02B7/346
摘要： A range finding device having a lens holder with two tunnels, and two lens plates mounted in front of the tunnels. Two pins are formed on the front surface of the lens holder, the two pins being positioned on vertical positioning lines externally of the vertical center lines of the two tunnels. Each lens plate has an elongated hole extending in the direction of the vertical positioning line, a pin being inserted in the elongated hole. In a preferred embodiment, each lens plate has four holes formed therein. Two of the four holes are used for coupling with two pins. Of these two holes used for positioning, one is a round hole and the other is an elongated hole.
摘要翻译：一种测距装置，其具有带有两个隧道的透镜架，以及安装在隧道前方的两个透镜板。两个销形成在透镜架的前表面上，两个销定位在两个隧道的垂直中心线外部的垂直定位线上。每个透镜板具有沿垂直定位线的方向延伸的细长孔，销插入长孔中。在优选实施例中，每个透镜板在其中形成有四个孔。四个孔中的两个用于与两个引脚耦合。在这两个用于定位的孔中，一个是圆孔，另一个是细长孔。

6. 发明授权

US4582769A Electrophotographic element with amorphous Si(C) overlayer 失效
标题翻译：具有非晶Si（C）覆盖层的电子照相元件
公开(公告)号：US4582769A
公开(公告)日：1986-04-15
申请号：US596718
申请日：1984-04-04
申请人： Keishiro Kido , Kazuhiro Kawajiri , Hiroshi Sunagawa , Hiroshi Tamura , Mitsuo Saito
发明人： Keishiro Kido , Kazuhiro Kawajiri , Hiroshi Sunagawa , Hiroshi Tamura , Mitsuo Saito
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14
CPC分类号： G03G5/08221
摘要： An electrophotographic photosensitive material comprising an electrically conductive support and a photoconductive layer of amorphous silicon containing a silicon atom and a hydrogen atom and/or a halogen atom provided said support, which comprises a low-photoconductive overcoat layer of amorphous silicon containing a carbon atom in a ratio of 5 to 35 atomic % on said photoconductive layer.
摘要翻译：包含导电载体和含有硅原子和氢原子和/或卤素原子的非晶硅光电导层的电子照相感光材料提供了所述载体，其包括含有碳原子的非晶硅的低光导外涂层所述光电导层上的比例为5至35原子％。

7. 发明授权

US4791307A Method for reading out charges in solid-state image pickup unit 失效
标题翻译：在固态摄像单元中读出电荷的方法
公开(公告)号：US4791307A
公开(公告)日：1988-12-13
申请号：US108340
申请日：1987-10-14
申请人： Kazuhiro Kawajiri , Masatoshi Tabei
发明人： Kazuhiro Kawajiri , Masatoshi Tabei
IPC分类号： H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H04N9/04 , H04N9/07 , H01J40/14 , H04N3/14
CPC分类号： H04N9/045 , H04N3/1525
摘要： A method for reading out signal charges in a solid-state image pickup unit providing either an improved resolution for a constant vertical integration density or a reduced vertical integration density while maintaining the same resolution. The photoelectric conversion elements of the unit are arranged in a matrix of rows and columns with m rows of photoelectric conversion elements being assigned to each scanning line. Signal charges generated in the photoelectric conversion elements during exposure are transferred to a vertical transfer section in the order of the m-th row to the first row in each scanning line, and then the charges are transferred to a horizontal charge transfer section using a four-phase driving method.
摘要翻译：一种用于在固态图像拾取单元中读出信号电荷的方法，其提供用于恒定垂直积分密度的改进分辨率或降低的垂直积分密度，同时保持相同的分辨率。该单元的光电转换元件被排列成行和列的矩阵，其中m行的光电转换元件被分配给每条扫描线。在曝光期间在光电转换元件中产生的信号电荷以每条扫描线中的第m行到第一行的顺序被传送到垂直传送部分，然后使用四条信息将电荷传送到水平电荷转移部分相位驱动方式。

8. 发明授权

US07052928B2 Solid state imaging device, method for producing the same, and portable electronic device 有权
标题翻译：固态成像装置及其制造方法以及便携式电子装置
公开(公告)号：US07052928B2
公开(公告)日：2006-05-30
申请号：US10778655
申请日：2004-02-12
申请人： Takefumi Konishi , Kazuhiro Kawajiri
发明人： Takefumi Konishi , Kazuhiro Kawajiri
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463 , H01L27/14687
摘要： A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.
摘要翻译：提供了一种用于制造固态成像装置的方法，所述固态成像装置包括包括第一单位像素部分的多个单位像素部分。该方法包括以下步骤：在设置在第一导电类型半导体层上的第二导电类型半导体层上形成第一单位像素部分的第一导电类型阱区，该第一导电类型阱区包括用于产生电荷的光接收区到入射到其上的光量和能够传送电荷的电荷转移区域; 以及产生用于在电荷转移区域中积累在光接收区域中产生的电荷的电荷累积区域。形成第一导电型阱区域的步骤包括注入杂质的步骤，使得第一导电类型阱区域中的光接收区域和电荷转移区域具有基本均匀的杂质浓度。

9. 发明授权

US4701798A Electronic still camera system with differential error-correcting means 失效
标题翻译：电子静态相机系统具有差分纠错手段
公开(公告)号：US4701798A
公开(公告)日：1987-10-20
申请号：US873887
申请日：1986-06-13
申请人： Masatoshi Tabei , Kazuhiro Kawajiri
发明人： Masatoshi Tabei , Kazuhiro Kawajiri
IPC分类号： H04N3/15 , H04N3/14
CPC分类号： H04N3/1543
摘要： An electronic still camera wherein midway through an exposure the charge signals impressed by incident light on an imaging section are transferred to a storage array while the exposure continues. Corresponding signals on the imaging array and the storage arrays are differenced to form error signals which are added to or subtracted from the two original signals before they are combined.
摘要翻译：一种电子静态照相机，其中在曝光中途，当曝光持续时，将入射光照射在成像部分上的电荷信号传送到存储阵列。成像阵列和存储阵列上的对应信号不同，以形成误差信号，它们在组合之前被加到或从两个原始信号中减去。

10. 发明授权

US4555464A Amorphous silicon electrophotographic photosensitive materials 失效
标题翻译：非晶硅电子照相感光材料
公开(公告)号：US4555464A
公开(公告)日：1985-11-26
申请号：US628363
申请日：1984-07-06
申请人： Keishiro Kido , Hiroshi Sunagawa , Kazuhiro Kawajiri , Toshio Iijima , Nobuharu Nozaki
发明人： Keishiro Kido , Hiroshi Sunagawa , Kazuhiro Kawajiri , Toshio Iijima , Nobuharu Nozaki
IPC分类号： G03G5/04 , G03G5/08 , G03G5/082 , G03G5/14
CPC分类号： G03G5/08235 , G03G5/08
摘要： An electrophotographic photosensitive material comprising a conductive support having thereon, in succession, a photoconductive layer composed of an amorphous material containing silicon atom and a barrier layer mainly composed of carbon and silicon, nitrogen and silicon, or oxygen and silicon, and further on the barrier layer a surface improvement layer having a composition of carbon and silicon of from 0.70/1 to 0.95/1 by atomic ratio in carbon/carbon+silicon, and the composition ratio being larger than that of the barrier layer.
摘要翻译：一种电子照相感光材料，包括导电支撑体，其上依次包括由含硅原子的非晶材料构成的光电导层和主要由碳和硅，氮和硅或氧和硅构成的阻挡层，并且还在阻挡层上在碳/碳+硅中以原子比计，具有碳原子比为0.70 / 1〜0.95 / 1的碳和硅组成的表面改性层，其组成比大于阻挡层的组成比。

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