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1. 发明授权

US4677301A Alignment apparatus 失效
标题翻译：校准装置
公开(公告)号：US4677301A
公开(公告)日：1987-06-30
申请号：US681843
申请日：1984-12-14
申请人： Akikazu Tanimoto , Toshio Matsuura , Seiro Murakami , Makoto Uehara , Kyoichi Suwa
发明人： Akikazu Tanimoto , Toshio Matsuura , Seiro Murakami , Makoto Uehara , Kyoichi Suwa
IPC分类号： G03B27/53 , B65G1/00 , G03F9/00 , H01L21/027 , H01L21/30 , G01N21/86 , H01J3/14
CPC分类号： G03F9/70
摘要： A position alignment apparatus aligns a photosensitive substrate and a mask (projection image) at high speed and with high precision. The apparatus has a projection optical system for projecting a pattern image on a mask or reticle onto a photosensitive substrate, a detector for detecting a two-dimensional misalignment of a projected pattern image and a wafer, and means for moving the wafer along orthogonal x- and y-axis directions and for rotating the wafer along a rotational direction within a plane defined by the x- and y-axis directions so as to eliminate the misalignment, wherein the detector has first detecting means with an optical system for detecting at least a misalignment of the wafer along the x-axis direction through the projection lens, and second detecting means with an optical system separate from the projection lens and for detecting at least a misalignment of the wafer along a rotational direction.
摘要翻译：位置对准装置以高精度和高精度对准感光基片和掩模（投影图象）。该装置具有用于将掩模或掩模版上的图案图像投影到感光基板上的投影光学系统，用于检测投影图案图像和晶片的二维未对准的检测器，以及用于沿正交x轴移动晶片的装置，和y轴方向，并且用于在由x轴方向和y轴方向限定的平面内沿着旋转方向旋转晶片，以消除所述未对准，其中所述检测器具有第一检测装置，其具有用于检测至少一个晶片沿着x轴方向通过投影透镜偏移，以及第二检测装置，其具有与投影透镜分离的光学系统，并用于至少检测晶片沿旋转方向的不对准。

2. 发明授权

US4699515A Process of transfer of mask pattern onto substrate and apparatus for alignment therebetween 失效
标题翻译：将掩模图案转移到基板上的工艺和用于在其间对准的装置
公开(公告)号：US4699515A
公开(公告)日：1987-10-13
申请号：US705699
申请日：1985-02-26
申请人： Akikazu Tanimoto , Toshio Matsuura , Kyoichi Suwa
发明人： Akikazu Tanimoto , Toshio Matsuura , Kyoichi Suwa
IPC分类号： G03F9/00 , G01B11/00
CPC分类号： G03F9/70
摘要： In an exposure apparatus for manufacturing semiconductor devices, a pattern on a photomask is aligned with a plurality of patterns formed on a wafer in a manner that detects and corrects misalignment, including, inter alia, rotational errors, not only between a photomask and a wafer, but also between a photomask and individual chips formed on the wafer, so that pattern matching is attained with very high accuracy. Apparatus for achieving this result employs different arrangements of alignment marks together with optical systems and positional adjustment devices.
摘要翻译：在用于制造半导体器件的曝光装置中，光掩模上的图案以形成在晶片上的多个图案与检测和校正不对准的方式对准，包括尤其是除了光掩模和晶片之间的旋转误差，而且在光掩模和形成在晶片上的单个芯片之间，使得以非常高的精度获得图案匹配。用于实现该结果的装置与光学系统和位置调整装置一起使用对准标记的不同布置。

3. 再颁专利

USRE32795E Exposure apparatus for production of integrated circuit 失效
标题翻译：曝光装置用于生产集成电路
公开(公告)号：USRE32795E
公开(公告)日：1988-12-06
申请号：US895132
申请日：1986-08-11
申请人： Toshio Matsuura , Kyoichi Suwa , Hisayuki Shimizu , Akikazu Tanimoto
发明人： Toshio Matsuura , Kyoichi Suwa , Hisayuki Shimizu , Akikazu Tanimoto
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70058 , H01L21/30
摘要： An exposure apparatus for production of ICs of the type that includes a stage on which is placed a semiconductor wafer to be exposed by illumination light projecting means, and means for two-dimensionally moving the stage within a plane intersecting the illumination light at substantially right angles. The improvement comprises illumination detection means provided with a photo reception surface, and means for mounting the illumination detection means on the stage in such a manner that the photo reception surface and the surface of the semiconductor wafer on the stage to be exposed are at substantially equal height relative to the stage.

4. 发明授权

US4465368A Exposure apparatus for production of integrated circuit 失效
标题翻译：曝光装置用于生产集成电路
公开(公告)号：US4465368A
公开(公告)日：1984-08-14
申请号：US335733
申请日：1981-12-30
申请人： Toshio Matsuura , Kyoichi Suwa , Hisayuki Shimizu , Akikazu Tanimoto
发明人： Toshio Matsuura , Kyoichi Suwa , Hisayuki Shimizu , Akikazu Tanimoto
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30 , G01J1/42
CPC分类号： G03F7/70058 , H01L21/30
摘要： An exposure apparatus for production of ICs of the type that includes a stage on which is placed a semiconductor wafer to be exposed by illumination light projecting means, and means for two-dimensionally moving the stage within a plane intersecting the illumination light at substantially right angles. The improvement comprises illumination detection means provided with a photo reception surface, and means for mounting the illumination detection means on the stage in such a manner that the photo reception surface and the surface of the semiconductor wafer on the stage to be exposed are at substantially equal height relative to the stage.
摘要翻译：一种用于制造IC的曝光装置，其包括：被放置在被照明光投射装置曝光的半导体晶片的台上;以及用于在与照明光以大致直角交叉的平面内二维地移动台的装置。该改进包括设置有光接收表面的照明检测装置，以及用于将照射检测装置安装在舞台上的装置，使得受光面和要暴露的舞台上的半导体晶片的表面基本相等高度相对于舞台。

5. 发明授权

US4566795A Alignment apparatus 失效
标题翻译：校准装置
公开(公告)号：US4566795A
公开(公告)日：1986-01-28
申请号：US586639
申请日：1984-03-06
申请人： Toshio Matsuura , Kyoichi Suwa
发明人： Toshio Matsuura , Kyoichi Suwa
IPC分类号： H01L21/30 , G01B11/00 , G03F7/20 , G03F9/00 , H01L21/027 , G01B11/27
CPC分类号： G03F9/7046 , G03F7/70358 , G03F9/7049
摘要： An alignment apparatus for aligning one of the substrates with the other by means of first and second reference marks comprises scanning means including a light beam generating means for reciprocally scanning first and second areas respectively by a light beam, discrimination means for generating a discrimination signal indicative of the scanning direction by the scanning means in synchronism with the scanning, first photoelectric means for generating a first signal when the first photoelectric means receives the light beam transmitted through a first area and separated by the first reference mark, second photoelectric means for generating a second signal when the second photoelectric means receives the light beam transmitted through the second area and separated by the second reference mark, operation means for determining the direction and amount of the relative deviation between the first and second reference marks from the first and second signals and from the discrimination signal, and means for moving one of the substrates relative to the other in response to the operation means. The alignment apparatus is simple in structure and can detect alignment marks with higher accuracy. The alignment apparatus enables the alignment of a wafer with a reticle or mask at higher speed and with higher preciseness.
摘要翻译：用于通过第一和第二参考标记将一个基板与另一个基板对准的对准装置包括扫描装置，其包括用于分别由光束往复扫描第一和第二区域的光束产生装置，用于产生指示所述第一光电装置用于当所述第一光电装置接收到透过第一区域并被所述第一参考标记分开的光束时产生第一信号;第二光电装置，用于产生第一信号，第二信号，当第二光电装置接收到通过第二区域传输并被第二参考标记分隔的光束时，用于确定第一和第二参考标记与第一和第二信号之间的相对偏离的方向和量的操作装置，以及从辨别信号以及用于响应于操作装置移动基板之一相对于另一个的装置。对准装置结构简单，可以更精确地检测对准标记。对准装置使得能够以更高的速度和更高的精度将晶片与掩模版或掩模对准。

6. 发明授权

US4592625A Double-conjugate maintaining optical system 失效
标题翻译：双共轭保持光学系统
公开(公告)号：US4592625A
公开(公告)日：1986-06-03
申请号：US469015
申请日：1983-02-23
申请人： Makoto Uehara , Satoru Anzai , Kyoichi Suwa
发明人： Makoto Uehara , Satoru Anzai , Kyoichi Suwa
IPC分类号： G02B13/22 , G02B19/00 , G02B21/08 , G02B27/00 , G03F7/20 , G01B11/00
CPC分类号： G03F7/70241 , G02B13/22
摘要： A double-conjugate maintaining optical system for maintaining the conjugate relation between an object and its image even if the distance between the object and the image varies and also maintaining another set of conjugate relation in a predetermined condition includes an afocal system comprising a plurality of lens units, a first positive lens unit disposed on the object side of the afocal system, and a second positive lens unit disposed on the image side of the afocal system. The first positive lens unit is movable relative to the second positive lens unit so that the object is positioned on the focal plane of the first positive lens unit opposite to the afocal system. The afocal system is movable along the optical axis thereof in a predetermined relation with the first positive lens unit.
摘要翻译：即使物体与图像之间的距离发生变化并且在预定条件下也保持另一组共轭关系的双重共轭维持光学系统，用于保持物体与其图像之间的共轭关系，包括包括多个透镜的无焦点系统设置在无焦点系统的物体侧的第一正透镜单元和设置在无焦系统的像侧上的第二正透镜单元。第一正透镜单元可相对于第二正透镜单元移动，使得物体位于与无焦系统相对的第一正透镜单元的焦平面上。无焦点系统可以沿其光轴以与第一正透镜单元预定的关系移动。

7. 发明授权

US4734746A Exposure method and system for photolithography 失效
标题翻译：用于光刻的曝光方法和系统
公开(公告)号：US4734746A
公开(公告)日：1988-03-29
申请号：US51236
申请日：1987-05-12
申请人： Kazuo Ushida , Satoru Anzai , Kazuaki Suzuki , Toshio Matsuura , Kyoichi Suwa , Koichi Matsumoto
发明人： Kazuo Ushida , Satoru Anzai , Kazuaki Suzuki , Toshio Matsuura , Kyoichi Suwa , Koichi Matsumoto
IPC分类号： G03F7/20 , G03B27/32 , G03B27/42
CPC分类号： G03F7/70066 , G03F7/2022 , G03F7/70241 , G03F7/70458
摘要： An exposure method for photolithography comprises the steps of forming a pattern on a substrate by the use of a first exposure apparatus including a first imaging optical system having a reduction magnification 1/.beta.1 and an image circle of a diameter .phi.1, and forming a second pattern on the substrate on which the first pattern has been formed, by the use of a second exposure apparatus including a second imaging optical system having a reduction magnification 1/.beta.2 different from the reduction magnification 1/.beta.1 and an image circle of a diameter .phi.2, wherein when N is an integer, the conditions that .beta.1.times..phi.1=.beta.2.times..phi.2 and .phi.1=N.times..phi.2 are satisfied.
摘要翻译：用于光刻的曝光方法包括以下步骤：通过使用包括具有缩小倍率1 /β1的第一成像光学系统和直径φ1的图像圆的第一曝光装置在基板上形成图案，并且形成通过使用包括具有不同于缩小倍率1 /β1的缩小倍率1 /β2的第二成像光学系统的第二曝光装置和形成第一图案的图像圆的第二图案，直径phi 2，其中当N是整数时，满足β1 phi 1 =β2 ph 2和ph 1 = N x ph 2的条件。

8. 发明授权

US5838450A Direct reticle to wafer alignment using fluorescence for integrated circuit lithography 失效
标题翻译：使用荧光进行集成电路光刻的直接光罩到晶圆对准
公开(公告)号：US5838450A
公开(公告)日：1998-11-17
申请号：US457710
申请日：1995-06-02
申请人： John H. McCoy , Martin E. Lee , Kyoichi Suwa
发明人： John H. McCoy , Martin E. Lee , Kyoichi Suwa
IPC分类号： G01B11/00 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F9/7084 , G03F7/70358 , G03F7/70425 , G03F9/7076
摘要： A mask alignment system for integrated circuit lithography achieves reticle to wafer referencing. A detection system located below the main projection lens detects the image of reticle alignment marks while also detecting wafer alignment marks. The reticle marks are imaged in light at the exposure wavelength. A first detection method images the fluorescence produced in the photoresist by the reticle mark images. A microscope located below the main projection lens produces the image and also images the wafer marks with broadband non-actinic illumination. The second method images the reticle marks in exposure light using a microscope which images and detects the exposure wavelength while maintaining the illumination and detection of the wafer marks. The third method collects directly both the exposure light and fluorescent light that is scattered and reflected from the wafer surface; the presence of wafer alignment marks changes this light collection. Scanning the wafer relative to the reticle produces a signal indicating the relative position of reticle and wafer alignment marks. All three methods provide information for complete field-by-field alignment including offsets, reticle-to-wafer magnification, rotation, and skew for both step-and-repeat and scanning exposure systems.
摘要翻译：用于集成电路光刻的掩模对准系统实现了光栅到晶片参考。位于主投影透镜下方的检测系统检测标线对准标记的图像，同时检测晶片对准标记。掩模版标记以曝光波长的光照成像。第一检测方法通过标线图像对在光致抗蚀剂中产生的荧光进行成像。位于主投影透镜下方的显微镜产生图像，并且还利用宽带非光化照明对晶片标记进行成像。第二种方法使用显微镜在曝光光下对掩模版标记进行成像，并在保持照明和晶片标记的检测的同时检测曝光波长。第三种方法直接收集从晶片表面散射和反射的曝光光和荧光; 晶片对准标记的存在会改变这种光集合。相对于掩模版扫描晶片产生指示标线片和晶片对准标记的相对位置的信号。所有这三种方法提供了完整的逐场校准的信息，包括步进重复扫描和扫描曝光系统的偏移量，标尺到晶圆倍率，旋转和偏斜。

9. 发明授权

US5835227A Method and apparatus for determining performance characteristics in lithographic tools 失效
标题翻译：用于确定光刻工具的性能特征的方法和装置
公开(公告)号：US5835227A
公开(公告)日：1998-11-10
申请号：US818375
申请日：1997-03-14
申请人： Ilya Grodnensky , Etsuya Morita , Kyoichi Suwa , Shigeru Hirukawa
发明人： Ilya Grodnensky , Etsuya Morita , Kyoichi Suwa , Shigeru Hirukawa
IPC分类号： G01M11/00 , G03F7/20 , G01B11/00 , G01B11/02
CPC分类号： G03F7/70058 , G03F7/70241 , G03F7/706
摘要： A method and apparatus for determining performance characteristics in lithographic tools includes projecting a predetermined image with a projection system having a known predetermined performance characteristic to obtain data indicative of the relationship between the size of the projected image and the predetermined performance characteristic. The same image is then projected in a system having an unknown value for the predetermined performance characteristic. The predetermined performance characteristic for the system under consideration is then determined based on the data obtained when the image was projected in the system having the known predetermined performance characteristic.
摘要翻译：用于确定光刻工具中的性能特征的方法和装置包括用具有已知预定性能特征的投影系统投影预定图像，以获得指示投影图像的尺寸与预定性能特征之间的关系的数据。然后将相同的图像投影在具有用于预定性能特征的未知值的系统中。然后，基于在具有已知的预定性能特征的系统中投影图像时获得的数据来确定所考虑的系统的预定性能特性。

10. 发明授权

US5777729A Wafer inspection method and apparatus using diffracted light 失效
$Wafer inspection method and apparatus using diffracted light$
标题翻译：使用衍射光的晶片检查方法和装置
公开(公告)号：US5777729A
公开(公告)日：1998-07-07
申请号：US644649
申请日：1996-05-07
申请人： Arun A. Aiyer , John H. McCoy , Kyoichi Suwa , Henry K. Chau
发明人： Arun A. Aiyer , John H. McCoy , Kyoichi Suwa , Henry K. Chau
IPC分类号： G01N21/88 , G01N21/47 , G01N21/94 , G01N21/956 , H01L21/66 , G01N21/00
CPC分类号： G01N21/8806 , G01N21/4788 , G01N21/9501 , G01N21/956
摘要： Defects in a processed or partly processed semiconductor wafer, or other similar three-dimensional periodic pattern formed on a substrate surface, are detected by light diffraction. Incident monochromatic light is provided from an elongated and extended source to illuminate the entire wafer surface. By use of automated image processing techniques, wafer macro inspection is thereby automated. The elongated and extended light source allows light at different angles to be incident upon each point of the wafer surface, thereby allowing defect detection for an entire wafer surface in a single field of view and reducing inspection time. The particular wavelength of the incident monochromatic light is predetermined to allow optimum detection of defects in the periodic pattern on the wafer, depending on the width and pitch of the features of the periodic pattern.
摘要翻译：通过光衍射检测经处理或部分处理的半导体晶片或形成在基板表面上的其它类似三维周期图案的缺陷。入射单色光从细长的和延伸的源提供，以照亮整个晶片表面。通过使用自动图像处理技术，晶片宏观检查因此被自动化。细长的和延伸的光源允许以不同角度的光入射到晶片表面的每个点上，从而允许在单个视场中的整个晶片表面的缺陷检测并减少检查时间。入射单色光的特定波长是预定的，以允许根据周期性图案的特征的宽度和间距来最佳地检测晶片上的周期性图案中的缺陷。

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