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1. 发明申请

US20060144714A1 Substrate plating method and apparatus 审中-公开
公开(公告)号：US20060144714A1
公开(公告)日：2006-07-06
申请号：US11360685
申请日：2006-02-24
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inous , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D3/38
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

2. 发明授权

US07033463B1 Substrate plating method and apparatus 失效
标题翻译：基板电镀方法及装置
公开(公告)号：US07033463B1
公开(公告)日：2006-04-25
申请号：US09762582
申请日：1999-08-11
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D17/00
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.
摘要翻译：一种方法和装置，通过有效地填充形成在半导体衬底中的精细凹槽，镀覆金属而没有空隙或污染，从而形成衬底以形成布线。用电镀金属填充形成在半导体衬底中的布线凹槽的衬底的电镀包括在衬底上进行形成初始层的无电镀处理，并且进行用电镀金属填充布线凹槽的电解电镀工艺，同时初始层用作供料层。

3. 发明授权

US06793794B2 Substrate plating apparatus and method 有权
标题翻译：基板电镀装置及方法
公开(公告)号：US06793794B2
公开(公告)日：2004-09-21
申请号：US10098415
申请日：2002-03-18
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D500
CPC分类号： C25D21/14 , C25D7/12 , C25D17/001
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

4. 发明授权

US06365017B1 Substrate plating device 有权
标题翻译：基板电镀装置
公开(公告)号：US06365017B1
公开(公告)日：2002-04-02
申请号：US09530805
申请日：2000-05-05
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D1700
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

5. 发明授权

US06638411B1 Method and apparatus for plating substrate with copper 有权
标题翻译：用铜电镀基板的方法和装置
公开(公告)号：US06638411B1
公开(公告)日：2003-10-28
申请号：US09492138
申请日：2000-01-27
申请人： Koji Mishima , Mizuki Nagai , Ryoichi Kimizuka , Tetsuo Matsuda , Hisashi Kaneko
发明人： Koji Mishima , Mizuki Nagai , Ryoichi Kimizuka , Tetsuo Matsuda , Hisashi Kaneko
IPC分类号： C25D534
CPC分类号： C25D17/001 , C25D5/18 , C25D5/34 , C25D7/123 , H05K3/22 , H05K2203/0392 , H05K2203/122 , Y10S205/917
摘要： The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.
摘要翻译：本发明涉及一种使用例如硫酸铜溶液在铜的电镀上分离金属铜的方法和装置，以在基板的表面上产生铜互连。使基板与包含在电镀液中的含有有机物质和硫化合物的至少一种的处理液接触至少一次。此后，使基板与电镀液接触以对基板进行平板化。

6. 发明授权

US06517689B1 Plating device 有权
标题翻译：电镀装置
公开(公告)号：US06517689B1
公开(公告)日：2003-02-11
申请号：US09463019
申请日：2000-01-19
申请人： Akihisa Hongo , Kenichi Suzuki , Atsushi Chono , Mitsuo Tada , Akira Ogata , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Kenichi Suzuki , Atsushi Chono , Mitsuo Tada , Akira Ogata , Satoshi Sendai , Koji Mishima
IPC分类号： B23H302
CPC分类号： C25D21/12 , G01R31/026
摘要： The present invention is to provide a conduction detection device that can detect electrical conductivity (contact condition) of feeding contacts with conductive layers of a substrate. The present invention also provides an electroplating apparatus, which is able to produce uniform currents to flow through each of feeding contacts. The apparatus has a plating vessel, in which an electrode is disposed opposite to a substrate which is affixed to a plating jig electrically through a plurality of feeding contacts for applying a specific voltage between the electrode and conductive layers provided on a plating surface of the substrate. Plating current flows from the plating jig through the feeding contacts to the substrate. A conduction detection device is provided to detect electrical conductive states between the plurality of feeding contacts and the conductive layer on the substrate.
摘要翻译：本发明提供一种能够检测与基板的导体层的馈电触点的导电性（接触状态）的导电检测装置。本发明还提供了一种电镀设备，其能够产生均匀的电流以流过每个馈电触点。该装置具有电镀槽，其中电极与衬底相对设置，该衬底通过多个馈电触点电连接到电镀夹具上，用于在电极和设置在衬底的电镀表面上的导电层之间施加特定电压。电镀电流从电镀夹具通过馈电触点流到基板。提供导电检测装置以检测多个馈电触点与基板上的导电层之间的导电状态。

7. 发明申请

US20080264798A1 Copper Plating Bath and Plating Method 审中-公开
公开(公告)号：US20080264798A1
公开(公告)日：2008-10-30
申请号：US12139051
申请日：2008-06-13
申请人： Tsutomu NAKADA , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
发明人： Tsutomu NAKADA , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , C25D5/18 , H05K3/423
摘要： An acid copper plating solution and plating method are disclosed. The acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, high molecular weight surfactant which controls the electrodeposition reaction, and a sulfur-containing saturated organic compound which promotes the electrocoating rate, wherein the high molecular weight surfactant comprises two or more types with different hydrophobicities. The plating method is a method for forming a plating film on a conductor layer, which is formed on at least a part of a structural object having a concave-convex pattern on a semiconductor substrate, and comprises providing a cathode potential to the conductor layer and supplying a plating solution which electrically connects an anode with the conductor layer, wherein the plating solution contains 25-75 g/l of copper ion and 0.4 mol/l of an organic acid or inorganic acid and an electric resistor is installed between the conductor layer and the anode. Also disclosed is a plating method for forming a wiring circuit on an electronic circuit substrate having fine holes and trenches, comprising forming a plating film on a conductor layer, which is formed on at least a part of the substrate, and filling the holes and trenches with copper, wherein the plating film is formed by using an acid copper plating solution containing copper ions, organic or inorganic acid, chloride ions, sulfur-containing saturated organic compound, and high molecular weight surfactant controlling electrocoating concentration of 500 ppm or more.The acid copper plating solution and the plating methods are extremely useful as a technology for plating the surface of wafers, which are semiconductor materials, particularly for forming circuit patterns having submicron-level trenches on electronic circuit substrates such as wafers, semi-conductor substrates, or printed boards by using metal plating such as copper plating and can therefore be used with advantage for manufacturing next generation electronic circuit boards with an increasing density of wiring circuits.

8. 发明申请

US20050126919A1 Plating method, plating apparatus and a method of forming fine circuit wiring 审中-公开
标题翻译：电镀方法，电镀装置以及形成精细电路布线的方法
公开(公告)号：US20050126919A1
公开(公告)日：2005-06-16
申请号：US10980320
申请日：2004-11-04
申请人： Makoto Kubota , Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima , Ryoichi Kimizuka
发明人： Makoto Kubota , Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima , Ryoichi Kimizuka
IPC分类号： C25D3/38 , C25D5/02 , C25D17/00 , C25D21/14 , H05K3/42
CPC分类号： C25D21/14 , C25D3/38 , H05K3/423
摘要： A copper plating film has a lower chlorine ion content. Circuit wiring of high electromigration resistance is formed by electroplating. In a method of copper plating using a leveler containing a nitrogen-containing high molecular compound, the leveler is dechlorinated prior to its use for plating. A plating apparatus has a tank for preparing a plating solution, a device for dechlorinating a leveler, a leveler supply station for supplying the dechlorinated leveler to the tank and a plating station. A method of forming fine circuit wiring includes forming a circuit with a phosphorus-doped copper plating layer on a substrate for an electronic circuit having a fine circuit pattern, a barrier layer and any necessary seed layer formed thereon.
摘要翻译：镀铜膜的氯离子含量较低。具有高电迁移电阻的电路布线通过电镀形成。在使用含有含氮高分子化合物的矫直机的镀铜方法中，在使用电镀之前，将矫平机脱氯。电镀装置具有用于制备电镀液的容器，用于脱水的矫直机的装置，用于向该罐供给脱氯矫平机的矫平机供给站和电镀站。形成精细电路布线的方法包括在具有精细电路图案，阻挡层和形成在其上的任何必要的种子层的电子电路用基板上形成具有磷掺杂铜电镀层的电路。

9. 发明申请

US20050072683A1 Copper plating bath and plating method 审中-公开
标题翻译：镀铜浴和电镀方法
公开(公告)号：US20050072683A1
公开(公告)日：2005-04-07
申请号：US10816168
申请日：2004-04-02
申请人： Tsutomu Nakada , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
发明人： Tsutomu Nakada , Tsuyoshi Sahoda , Koji Mishima , Ryoichi Kimizuka , Takeshi Kobayashi
IPC分类号： C25D3/38 , C25D5/18 , H05K3/42
CPC分类号： C25D3/38 , C25D5/18 , H05K3/423
摘要： An acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, a high molecular weight surfactant that controls the electrodeposition reaction, and a sulfur-containing saturated organic compound that promotes the electrocoating rate. The high molecular weight surfactant comprises two or more types of surfactants with different hydrophobicities. The plating solution is used for forming a plating film on a conductor layer.
摘要翻译：酸性铜电镀液包含铜离子，有机酸或无机酸，氯离子，控制电沉积反应的高分子量表面活性剂，以及促进电泳率的含硫饱和有机化合物。高分子量表面活性剂包含两种或多种具有不同疏水性的表面活性剂。电镀液用于在导体层上形成镀膜。

10. 发明申请

US20050045486A1 Plating method and plating solution 审中-公开
标题翻译：电镀方法和镀液
公开(公告)号：US20050045486A1
公开(公告)日：2005-03-03
申请号：US10885136
申请日：2004-07-07
申请人： Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima , Ryoichi Kimizuka
发明人： Tsuyoshi Sahoda , Tsutomu Nakada , Koji Mishima , Ryoichi Kimizuka
IPC分类号： C25D3/38 , C25D5/02 , C25D7/12 , H01L21/288 , H01L21/445 , H01L21/768 , H05K3/18 , H05K3/42
CPC分类号： H05K3/423 , C25D3/38 , H01L21/2885 , H01L21/76877
摘要： The present invention provides a plating method which can embed copper in interconnect recesses, such as vias and interconnect trenches, having an opening width or size of several tens of μm and an aspect ratio of at least 1.5. The plating method comprises: providing a substrate having interconnect recesses, whose surfaces are covered with a conductive layer, formed in a surface of the substrate; bringing the surface of the substrate into contact with a plating solution containing copper ions, an organic or inorganic acid, chloride ions, a polymeric surfactant for suppressing electrodeposition, a sulfur-containing saturated organic compound for promoting the growth of a plated film, and a nitrogen-containing polymer for flattening a surface of the plated film; and applying a voltage between the conductive layer and an anode immersed in the plating solution.
摘要翻译：本发明提供一种电镀方法，其可以将铜嵌入诸如通路和互连沟槽的互连凹槽中，其具有几十个开口宽度或尺寸，并且纵横比至少为1.5。电镀方法包括：提供具有互连凹槽的基板，其表面被形成在基板的表面中的导电层覆盖; 使基板的表面与含有铜离子，有机或无机酸，氯离子的电镀溶液，用于抑制电沉积的聚合物表面活性剂接触，用于促进镀膜生长的含硫饱和有机化合物，以及用于使镀膜表面变平的含氮聚合物; 以及在所述导电层和浸在所述电镀液中的阳极之间施加电压。

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