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1. 发明申请

US20110240224A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20110240224A1
公开(公告)日：2011-10-06
申请号：US13070115
申请日：2011-03-23
申请人： Akihiro YOSHIMURA , Tetsuji SATO , Masato HORIGUCHI , Nobuhiro WADA , Makoto KOBAYASHI , Hiroshi TSUJIMOTO , Jun TAMURA , Mamoru NAOI
发明人： Akihiro YOSHIMURA , Tetsuji SATO , Masato HORIGUCHI , Nobuhiro WADA , Makoto KOBAYASHI , Hiroshi TSUJIMOTO , Jun TAMURA , Mamoru NAOI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32568
摘要： Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.
摘要翻译：公开了一种能够抑制在圆筒形室的一侧的移动电极与端壁之间的空间中产生等离子体的基板处理装置。基板处理装置包括用于容纳晶片的圆柱形室，可沿着室内的室的中心轴线移动的喷头，与腔室中的淋浴喷头相对的基座，以及柔性波纹管，其将淋浴头连接到所述室，其中向所述淋浴喷头和所述基座之间呈现的处理空间施加高频功率，将处理气体引入所述处理空间中，所述淋浴喷头和所述室的侧壁彼此不接触，并且旁路部件被安装成电连接淋浴头和盖子或室的侧壁。

2. 发明申请

US20110116207A1 SUBSTRATE MOUNTING TABLE OF SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工装置基板安装台
公开(公告)号：US20110116207A1
公开(公告)日：2011-05-19
申请号：US12947214
申请日：2010-11-16
申请人： Tetsuji SATO , Takashi Kitazawa , Akihiro Yoshimura
发明人： Tetsuji SATO , Takashi Kitazawa , Akihiro Yoshimura
IPC分类号： H01L21/683
CPC分类号： H01L21/6831
摘要： A substrate mounting table of a substrate processing apparatus includes a base portion and a circular plate-shaped electrostatic chuck adhered to an upper surface of the base portion by an adhesive layer. The electrostatic chuck has a circular attracting surface to support a substrate. The substrate mounting table further includes an annular focus ring arranged around the electrostatic chuck to surround the substrate and to cover an outer peripheral portion of the upper surface of the base portion. The electrostatic chuck has a two-layer structure including an upper circular part and a lower circular part having a diameter larger than that of the upper circular part. An outer peripheral portion of the lower circular part and an outer peripheral portion of the adhesive layer adhering the lower circular part to the base portion are covered with the focus ring.
摘要翻译：基板处理装置的基板安装台包括基部和通过粘合层粘附到基部的上表面的圆形板状静电卡盘。静电吸盘具有支撑衬底的圆形吸引表面。基板安装台还包括围绕静电卡盘布置以围绕基板并覆盖基部的上表面的外周部分的环形聚焦环。静电卡盘具有包括上部圆形部分和直径大于上部圆形部分的直径的下部圆形部分的两层结构。下部圆形部分的外围部分和将下部圆形部分粘附到基部的粘合剂层的外周部分被聚焦环覆盖。

3. 发明申请

US20090206055A1 PLASMA PROCESSING APPARATUS AND METHOD, AND BAFFLE PLATE OF THE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工装置和方法，等离子体加工装置的平板
公开(公告)号：US20090206055A1
公开(公告)日：2009-08-20
申请号：US12388843
申请日：2009-02-19
申请人： Tetsuji SATO , Akihiro Yoshimura
发明人： Tetsuji SATO , Akihiro Yoshimura
IPC分类号： H01L21/306
CPC分类号： H01J37/32633 , H01J37/32449 , H01J37/32623
摘要： In a plasma processing apparatus for performing a plasma process on a target substrate, a baffle plate has an opening through which the process passes and partitions the internal space of the processing container into a plasma process space and an exhaust space, the opening being a single continuous slit. The baffle plate is disposed in an annular gas exhaust path around the mounting table, and the slit includes a plurality of linear slit portions extending in a radial direction of the annular baffle plate and a plurality of curved slit portions, each of which interconnects ends of a pair of the adjacent linear slit portions, so that the slit is formed in a wave shape in its entirety.
摘要翻译：在用于在目标基板上进行等离子体处理的等离子体处理装置中，挡板具有开口，工序通过该开口并将处理容器的内部空间分隔成等离子体处理空间和排气空间，该开口为单个连续缝挡板设置在安装台周围的环形排气通道中，狭缝包括沿环形挡板的径向延伸的多个线性狭缝部分和多个弯曲狭缝部分，每个弯曲狭缝部分将一对相邻的线状狭缝部，使得狭缝整体形成波形。

4. 发明申请

US20110030898A1 Plasma Processing Apparatus and the Upper Electrode Unit 有权
标题翻译：等离子体处理装置和上电极单元
公开(公告)号：US20110030898A1
公开(公告)日：2011-02-10
申请号：US12894803
申请日：2010-09-30
申请人： Tetsuji SATO
发明人： Tetsuji SATO
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/3244
摘要： In a plasma processing apparatus that executes plasma processing on a semiconductor wafer placed inside a processing chamber by generating plasma with a processing gas supplied through a gas supply hole at an upper electrode (shower head) disposed inside the processing chamber, an interchangeable insert member is inserted at a gas passing hole at a gas supply unit to prevent entry of charged particles in the plasma generated in the processing chamber into the gas supply unit. This structure makes it possible to fully prevent the entry of charged particles in the plasma generated inside the processing chamber into the gas supply unit.
摘要翻译：在等离子体处理装置中，通过利用设置在处理室内的上部电极（喷淋头）上的供气孔供给的处理气体，产生等离子体，对位于处理室内部的半导体晶片进行等离子体处理，可互换插入部件插入在气体供给单元处的气体通过孔处，以防止在处理室中产生的等离子体中的带电粒子进入气体供应单元。这种结构使得可以完全防止在处理室内产生的等离子体中的带电粒子进入气体供应单元。

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