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    • 6. 发明授权
    • Method for forming domain-inverted structure and optical element with domain-inverted structure
    • 用于形成域反转结构的方法和具有域倒置结构的光学元件
    • US07230753B2
    • 2007-06-12
    • US10535975
    • 2003-11-21
    • Kiminori MizuuchiAkihiro MorikawaTomoya Sugita
    • Kiminori MizuuchiAkihiro MorikawaTomoya Sugita
    • G02F1/00G02F2/02
    • G02F1/3558
    • A method for forming a domain-inverted structure includes the following: using a ferroelectric substrate (1) having a principal surface substantially perpendicular to the Z axis of crystals; providing a first electrode (3) on the principal surface of the ferroelectric substrate, the first electrode having a pattern of a plurality of electrode fingers (5) that are arranged periodically; providing a counter electrode (6) on the other side of the ferroelectric substrate so as to be opposite from the first electrode; and applying an electric field to the ferroelectric substrate with the first electrode and the counter electrode, thereby forming domain-inverted regions corresponding to the pattern of the first electrode in the ferroelectric substrate. Each of the electrode fingers of the first electrode is located so that a direction from a base to a tip (5a) of the electrode finger is aligned with the Y-axis direction of the crystals of the ferroelectric substrate. This method can provide a short-period uniform domain-inverted structure.
    • 用于形成畴反转结构的方法包括:使用具有基本上垂直于晶体的Z轴的主表面的铁电体基板(1) 在所述强电介质基板的主表面上设置第一电极,所述第一电极具有周期性排列的多个电极指(5)的图案; 在所述铁电体基板的另一侧设置与所述第一电极相对的对置电极(6); 并且利用第一电​​极和对电极向铁电体基板施加电场,从而形成与铁电体基板中的第一电极的图案对应的畴反转区域。 第一电极的每个电极指的位置使得从电极指的基部到尖端(5a)的方向与铁电体的晶体的Y轴方向一致。 该方法可以提供短周期均匀域倒置结构。
    • 8. 发明申请
    • Polarization reversal structure constructing method and optical device having polarization reversal structure
    • 具有偏振反转结构的偏振反转结构构造方法和光学器件
    • US20060051025A1
    • 2006-03-09
    • US10535975
    • 2003-11-21
    • Kiminori MizuuchiAkihiro MorikawaTomoya Sugita
    • Kiminori MizuuchiAkihiro MorikawaTomoya Sugita
    • G02B6/26
    • G02F1/3558
    • A method for forming a domain-inverted structure includes the following: using a ferroelectric substrate (1) having a principal surface substantially perpendicular to the Z axis of crystals; providing a first electrode (3) on the principal surface of the ferroelectric substrate, the first electrode having a pattern of a plurality of electrode fingers (5) that are arranged periodically; providing a counter electrode (6) on the other side of the ferroelectric substrate so as to be opposite from the first electrode; and applying an electric field to the ferroelectric substrate with the first electrode and the counter electrode, thereby forming domain-inverted regions corresponding to the pattern of the first electrode in the ferroelectric substrate. Each of the electrode fingers of the first electrode is located so that a direction from a base to a tip (5a) of the electrode finger is aligned with the Y-axis direction of the crystals of the ferroelectric substrate. This method can provide a short-period uniform domain-inverted structure.
    • 用于形成畴反转结构的方法包括:使用具有基本上垂直于晶体的Z轴的主表面的铁电体基板(1) 在所述强电介质基板的主表面上设置第一电极,所述第一电极具有周期性排列的多个电极指(5)的图案; 在所述铁电体基板的另一侧设置与所述第一电极相对的对置电极(6); 并且利用第一电​​极和对电极向铁电体基板施加电场,从而形成与铁电体基板中的第一电极的图案对应的畴反转区域。 第一电极的每个电极指的位置使得从电极指的基部到尖端(5a)的方向与铁电体的晶体的Y轴方向一致。 该方法可以提供短周期均匀域倒置结构。