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    • 5. 发明授权
    • Charge pump circuit, semiconductor memory device, and method for driving the same
    • 电荷泵电路,半导体存储器件及其驱动方法
    • US07706194B2
    • 2010-04-27
    • US12108948
    • 2008-04-24
    • Toshiki Mori
    • Toshiki Mori
    • G11C5/14
    • G11C16/30G11C5/145G11C8/10G11C16/10
    • A semiconductor memory device includes: a memory cell array including a plurality of memory cells arranged in rows and columns for holding information, each of the memory cells having a control gate; a plurality of word lines extending in a row direction, each of the word lines being connected to the control gates of the memory cells of a corresponding row of the memory cell array; a plurality of bit lines extending in a column direction and connected to sources or drains of the memory cells; a row decoder for selecting any of the plurality of word lines; a column decoder for selecting any of the plurality of bit lines; a charge pump circuit for generating a voltage higher than a supply voltage; and a first switch located in a connection path between the row decoder and the charge pump circuit.
    • 半导体存储器件包括:存储单元阵列,包括以行和列排列的用于保持信息的多个存储器单元,每个存储器单元具有控制栅极; 沿行方向延伸的多个字线,每条字线连接到存储单元阵列的对应行的存储单元的控制栅极; 沿列方向延伸并连接到存储单元的源极或漏极的多个位线; 行解码器,用于选择多个字线中的任一个; 列解码器,用于选择多个位线中的任一个; 用于产生高于电源电压的电压的电荷泵电路; 以及位于行解码器和电荷泵电路之间的连接路径中的第一开关。
    • 8. 发明申请
    • CHARGE PUMP CIRCUIT, SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR DRIVING THE SAME
    • 充电泵电路,半导体存储器件及其驱动方法
    • US20080266968A1
    • 2008-10-30
    • US12108948
    • 2008-04-24
    • Toshiki Mori
    • Toshiki Mori
    • G11C16/06G11C5/14
    • G11C16/30G11C5/145G11C8/10G11C16/10
    • A semiconductor memory device includes: a memory cell array including a plurality of memory cells arranged in rows and columns for holding information, each of the memory cells having a control gate; a plurality of word lines extending in a row direction, each of the word lines being connected to the control gates of the memory cells of a corresponding row of the memory cell array; a plurality of bit lines extending in a column direction and connected to sources or drains of the memory cells; a row decoder for selecting any of the plurality of word lines; a column decoder for selecting any of the plurality of bit lines; a charge pump circuit for generating a voltage higher than a supply voltage; and a first switch located in a connection path between the row decoder and the charge pump circuit.
    • 半导体存储器件包括:存储单元阵列,包括以行和列排列的用于保持信息的多个存储器单元,每个存储器单元具有控制栅极; 沿行方向延伸的多个字线,每条字线连接到存储单元阵列的相应行的存储单元的控制栅极; 沿列方向延伸并连接到存储单元的源极或漏极的多个位线; 行解码器,用于选择多个字线中的任一个; 列解码器,用于选择多个位线中的任一个; 用于产生高于电源电压的电压的电荷泵电路; 以及位于行解码器和电荷泵电路之间的连接路径中的第一开关。
    • 9. 发明申请
    • Liquid crystalline polymer cpmposition and use thereof
    • 液晶聚合物的制备及其用途
    • US20070293633A1
    • 2007-12-20
    • US11808839
    • 2007-06-13
    • Tomoya HosodaSatoshi OkamotoToshiki Mori
    • Tomoya HosodaSatoshi OkamotoToshiki Mori
    • C08G65/48
    • C08L67/00C08L71/00C08L2666/18
    • The present invention provides a liquid crystalline polymer composition comprising (A) a polymer including units of formula (I), and units of formula (II) and/or units of formula (III), the units of formula (I) being included in 15-80% by mol, based on the total units [(I)+(II)+(III)]; and (B) a polymer (B) including units of formula (IV), formula (V) and the formula (VI), each of units being included in 30-80% by mol, 10-35% by mol and 10-35% by mol, respectively, based on the total units [(IV)+(V)+(VI)], the component (B) being included in 5-80% by weight based on the total weight of the components (A) and (B); wherein (I) —(VI) are —OC—Ar1-0-, —O—Ar2—O—, —OC—Ar3—CO—, —OC—Ar4—O—, —O—Ar5—X— and —OC—Ar6—CO—, respectively.
    • 本发明提供一种液晶聚合物组合物,其包含(A)包含式(I)单元的聚合物和式(II)和/或式(III)单元的单元,式(I)的单元包括在 基于[(I)+(II)+(III)]的总单位为15〜80摩尔%。 和(B)包含式(IV),式(V)和式(VI)的单元的聚合物(B),各单元包含在30-80摩尔%,10-35摩尔%和10-35摩尔% 基于[(IV)+(V)+(VI)]的总单位分别为35摩尔%,组分(B)占组分(A(A))的总重量的5-80重量% )和(B); 其中(I) - (VI)是-OC-Ar 1 -O - , - O-Ar 2 -O - , - OC-Ar 3, -CO-,-OC-Ar 4 -O - , - O-Ar 5 -X-和-OC-Ar 6 -S / > -CO-。
    • 10. 发明申请
    • Thermosetting resin composition and adhesive films
    • 热固性树脂组合物和粘合膜
    • US20050228079A1
    • 2005-10-13
    • US10509023
    • 2003-03-26
    • Toru FujikiToshiki MoriHironobu IyamaShigeki Naitoh
    • Toru FujikiToshiki MoriHironobu IyamaShigeki Naitoh
    • C08L63/00C08L15/00C08L61/06C08L61/08C08L65/00C09J7/00C09J7/02C09J123/02C09J161/06C09J163/00
    • C08L61/06C08L63/00C09J7/10C09J2461/00C09J2463/00C08L2666/22
    • The present invention provides a thermosetting resin composition containing the following (A) component and (B) component, an adhesive containing the thermosetting resin composition and an organic solvent and/or water, and an adhesive film containing the thermosetting resin composition. (A) component: at least one kind of phenol resin selected from the group consisting of alkylphenol novolak, a phenol adduct of an aliphatic polymer containing a double bond, and a phenol adduct of an alicyclic polymer containing a double bond (B) component: epoxy group—containing ethylene-based copolymer obtained by polymerizing the following (b1) and (b2): (b1) ethylene and/or propylene (b2) monomer represented by the following formula (1): (wherein R represents a hydrocarbon group of a carbon number of 2 to 18 having a double bond, wherein at least one of hydrogen atoms of the hydrocarbon group may be substituted with a halogen atom, a hydroxyl group or a carboxyl group, and X represents a single bond or a carbonyl group).
    • 本发明提供一种含有下述(A)成分和(B)成分的热固性树脂组合物,含有热固性树脂组合物和有机溶剂和/或水的粘合剂和含有热固性树脂组合物的粘合剂膜。 (A)成分:选自烷基酚酚醛清漆,含有双键的脂肪族聚合物的苯酚加合物和含有双键的脂环式聚合物(B)成分的苯酚加合物中的至少一种酚醛树脂: 通过聚合以下(b 1/2)和(b 2/2):乙烯和(b 1/2)乙烯获得的含环氧基的乙烯基共聚物和 /或由下式(1)表示的丙烯(b 2/2)单体:(其中R表示具有双键的碳数为2至18的烃基,其中至少一个氢 烃基的原子可以被卤素原子,羟基或羧基取代,X表示单键或羰基)。