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1. 发明授权

US07808742B2 Thin-film magnetic head comprising shield/magnetic-pole layer having surface without right nor sharp angle 有权
标题翻译：薄膜磁头包括屏蔽/磁极层，其表面没有正确或锐利的角度
公开(公告)号：US07808742B2
公开(公告)日：2010-10-05
申请号：US11781606
申请日：2007-07-23
申请人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate , Hisayoshi Watanabe , Atsushi Yamaguchi , Shingo Miyata , Masahiro Saito
发明人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate , Hisayoshi Watanabe , Atsushi Yamaguchi , Shingo Miyata , Masahiro Saito
IPC分类号： G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3116 , G11B5/3912 , G11B5/3967 , G11B2005/3996
摘要： Provided is a thin-film magnetic head in which the concentration of magnetic flux in the shield layer and the magnetic pole layer is suppressed. The thin-film magnetic head comprises a plurality of magnetic layers that have front surfaces reaching a head end surface on the ABS side. Further in this head, at least one of the plurality of magnetic layers has a shape in which: each of edges corresponding to both side surfaces extends so as to spread obliquely rearward with each other from an end of a straight edge in a track width direction corresponding to the front surface; and the front surface reaching the head end surface has a shape in which upper and lower corner portions in each of both end portions in the track width direction form obtuse angles or rounded shapes.
摘要翻译：提供了一种薄膜磁头，其中屏蔽层和磁极层中的磁通量的浓度被抑制。薄膜磁头包括多个磁性层，其前表面到达ABS侧的头端面。此外，在该头部中，多个磁性层中的至少一个具有以下形状：对应于两个侧表面的每个边缘沿着轨道宽度方向从直边缘的端部彼此倾斜地向后延伸对应于前表面; 并且到达头端面的前表面具有这样的形状，其中在轨道宽度方向上的两个端部中的每一个中的上角部和下角部形成钝角或圆形。

2. 发明授权

US08247029B2 Method for forming micropattern 有权
标题翻译：微图案形成方法
公开(公告)号：US08247029B2
公开(公告)日：2012-08-21
申请号：US12140748
申请日：2008-06-17
申请人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
发明人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
IPC分类号： C23C16/00
CPC分类号： G03F7/40 , H01L21/0273
摘要： The micropattern formation of the invention comprises forming a resist pattern, and then forming a carbon-containing film on the surface of the resist pattern, followed by ashing of the carbon-containing film and a portion of the resist surface constituting the resist pattern. Thus, the discharge state of ashing just after the initiation of discharge is so stabilized that the ashing rate distribution can be improved, and sensitive pattern slimming can be implemented with ease and high precision.
摘要翻译：本发明的微图案形成包括形成抗蚀剂图案，然后在抗蚀剂图案的表面上形成含碳膜，然后灰化含碳膜和构成抗蚀剂图案的抗蚀剂表面的一部分。因此，放电开始之后的灰化的放电状态稳定，可以提高灰化率分布，并且可以容易且高精度地实现灵敏的图案减肥。

3. 发明授权

US08470189B2 Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element 有权
公开(公告)号：US08470189B2
公开(公告)日：2013-06-25
申请号：US12155381
申请日：2008-06-03
申请人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
发明人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
IPC分类号： B44C1/22
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： In the present invention, provided is a method of forming a mask pattern by which a fine thin film pattern may be formed more easily with higher resolution and precision. In the method of forming a mask pattern, a photoresist pattern having an opening is formed on a substrate, then, an inorganic film is formed so as to cover the upper surface of the photoresist pattern and the inside of the opening, then the inorganic film on the upper surface of the photoresist pattern is removed by a dry etching process. Subsequently, an inorganic mask pattern is formed by removing the photoresist pattern. The inorganic mask pattern thus formed hardly produces an issue of deformation such as physical displacement even when it is heated in the dry etching process.

4. 发明申请

US20090294403A1 Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element 有权
标题翻译：形成掩模图案的方法，薄膜图案的形成方法和形成磁阻元件的方法
公开(公告)号：US20090294403A1
公开(公告)日：2009-12-03
申请号：US12155381
申请日：2008-06-03
申请人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
发明人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： In the present invention, provided is a method of forming a mask pattern by which a fine thin film pattern may be formed more easily with higher resolution and precision. In the method of forming a mask pattern, a photoresist pattern having an opening is formed on a substrate, then, an inorganic film is formed so as to cover the upper surface of the photoresist pattern and the inside of the opening, then the inorganic film on the upper surface of the photoresist pattern is removed by a dry etching process. Subsequently, an inorganic mask pattern is formed by removing the photoresist pattern. The inorganic mask pattern thus formed hardly produces an issue of deformation such as physical displacement even when it is heated in the dry etching process.
摘要翻译：在本发明中，提供一种形成可以以更高分辨率和精度更容易地形成精细薄膜图案的掩模图案的方法。在形成掩模图案的方法中，在基板上形成具有开口的光致抗蚀剂图案，然后形成无机膜以覆盖光致抗蚀剂图案的上表面和开口内部，然后将无机膜在光刻胶图案的上表面上通过干蚀刻工艺除去。随后，通过去除光致抗蚀剂图案形成无机掩模图案。这样形成的无机掩模图案即使在干蚀刻工艺中被加热也几乎不产生诸如物理位移的变形的问题。

5. 发明授权

US07862737B2 Planarizing method 有权
标题翻译：平面化方法
公开(公告)号：US07862737B2
公开(公告)日：2011-01-04
申请号：US11837189
申请日：2007-08-10
申请人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
发明人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： G03F7/2026 , G03F7/00 , G11B5/3163
摘要： Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.
摘要翻译：提供一种平面化方法，其中可以进行具有高平坦度的平坦化，而不受所施加的抗蚀剂膜中的膜厚度的分布的限制。平面化方法包括以下步骤：在基板上形成的平坦化膜上形成抗蚀剂膜; 将形成有平坦化膜的区域的各个部分中的曝光量曝光在抗蚀剂膜上，确定曝光量以实现为了使抗蚀剂平坦化而留下的膜厚度各部分电影; 显影曝光的抗蚀剂膜，以形成具有受控的膜厚分布的抗蚀剂膜图案; 并蚀刻抗蚀剂膜图案和待平坦化的膜，直到消除要平坦化的膜的厚度消除量。

6. 发明授权

US07782441B2 Alignment method and apparatus of mask pattern 有权
标题翻译：掩模图案的对准方法和装置
公开(公告)号：US07782441B2
公开(公告)日：2010-08-24
申请号：US12025285
申请日：2008-02-04
申请人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
发明人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
IPC分类号： G03B27/68 , G03B27/42
CPC分类号： G03F7/7085 , G03F7/70616 , G03F7/70633 , G03F7/70783 , G03F9/7003
摘要： An alignment method of mask patterns includes forming a first layer by transferring a first mask pattern onto a wafer, forming a second layer by transferring a second mask pattern onto the first layer, and particularly a first alignment step, forming the first layer, which performs alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern and additional alignment for compensating an amount of possible deviation of superposition of the second layer pattern on the first layer pattern, and a second alignment step, forming the second layer, which performs only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.
摘要翻译：掩模图案的对准方法包括通过将第一掩模图案转印到晶片上来形成第一层，通过将第二掩模图案转印到第一层上形成第二层，特别地，形成第一层，其形成第一层，其执行用于最小化晶片的中心位置和第一掩模图案的中心位置之间的偏移的对准以及晶片和第一掩模图案之间的残余旋转误差以及用于补偿第二层图案的叠加的可能偏移量的附加对准在第一层图案和第二对准步骤中，形成第二层，其仅执行对准以最小化第一层图案的中心位置和第二掩模图案的中心位置之间的偏移和第一层图案之间的残留旋转误差层图案和第二掩模图案。

7. 发明授权

US07639451B2 Thin-film magnetic head, head gimbal assembly, and hard disk system 有权
标题翻译：薄膜磁头，磁头万向节装配和硬盘系统
公开(公告)号：US07639451B2
公开(公告)日：2009-12-29
申请号：US11668820
申请日：2007-01-30
申请人： Hideyuki Yatsu , Akifumi Kamijima , Hitoshi Hatate , Tomoyuki Sasaki
发明人： Hideyuki Yatsu , Akifumi Kamijima , Hitoshi Hatate , Tomoyuki Sasaki
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/3116
摘要： There is a thin-film magnetic head provided, which comprises a perpendicular recording head portion including a thin-film coil adapted to generate a magnetic flux, and a main magnetic pole layer that extends rearward from a recording medium opposite plane facing a recording medium and has a main magnetic pole adapted to release a magnetic flux produced at the thin-film coil toward the recording medium. A given concave groove form that is more constricted as the lower end draws nearer is provided at or near the flare point of the front end of the main magnetic pole, so that the flow of the magnetic flux through the main magnetic pole is focused on the upper end edge (gap portion), thereby improving overwrite performance and holding back the occurrence of pole erasure.
摘要翻译：提供了一种薄膜磁头，其包括垂直记录头部分，该垂直记录头部分包括适于产生磁通量的薄膜线圈，以及从与记录介质相对的记录介质向后延伸的主磁极层，以及具有适于将在薄膜线圈处产生的磁通朝向记录介质释放的主磁极。在主磁极的前端的喇叭口处或附近设置由于下端越靠近而更加收缩的给定的凹槽形状，使得通过主磁极的磁通量的流动聚焦在上端边缘（间隙部分），从而提高覆盖性能并阻止磁极擦除的发生。

8. 发明授权

US07947434B2 Process for forming a plated film, and process for fabricating a magnetic device and perpendicular magnetic recording head 有权
标题翻译：用于形成镀膜的方法，以及用于制造磁性装置和垂直磁记录头的方法
公开(公告)号：US07947434B2
公开(公告)日：2011-05-24
申请号：US11671758
申请日：2007-02-06
申请人： Akifumi Kamijima , Hitoshi Hatate , Hideyuki Yatsu
发明人： Akifumi Kamijima , Hitoshi Hatate , Hideyuki Yatsu
IPC分类号： G03F1/00
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： The process of forming a plated film according to the invention is designed such that the surface asperities of the inorganic film formed by the tracing of a standing wave occurring at the inner wall surface of the first opening in the resist at the resist pattern-formation step are reduced or eliminated. It is thus possible to form, efficiently yet in a short period of time, a high aspect-ratio plated film portion having an aspect ratio of greater than 1. In addition, the formed plated film quality is extremely improved for the absence of pores (cavities).
摘要翻译：根据本发明的形成镀膜的方法被设计成使得通过在抗蚀剂图案形成步骤中在抗蚀剂中的第一开口的内壁表面处产生的驻波的描绘形成的无机膜的表面粗糙度被减少或消除。因此，可以在短时间内有效地形成纵横比大于1的高纵横比电镀膜部分。此外，形成的镀膜质量在没有孔的情况下极大地改善（空腔）。

9. 发明申请

US20090311424A1 METHOD FOR FORMING MICROPATTERN 有权
标题翻译：形成微孔的方法
公开(公告)号：US20090311424A1
公开(公告)日：2009-12-17
申请号：US12140748
申请日：2008-06-17
申请人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
发明人： Akifumi Kamijima , Hideyuki Yatsu , Hitoshi Hatate
IPC分类号： B05D3/02 , C23C14/34
CPC分类号： G03F7/40 , H01L21/0273
摘要： The micropattern formation of the invention comprises forming a resist pattern, and then forming a carbon-containing film on the surface of the resist pattern, followed by ashing of the carbon-containing film and a portion of the resist surface constituting the resist pattern. Thus, the discharge state of ashing just after the initiation of discharge is so stabilized that the ashing rate distribution can be improved, and sensitive pattern slimming can be implemented with ease and high precision.
摘要翻译：本发明的微图案形成包括形成抗蚀剂图案，然后在抗蚀剂图案的表面上形成含碳膜，然后灰化含碳膜和构成抗蚀剂图案的抗蚀剂表面的一部分。因此，放电开始之后的灰化的放电状态稳定，可以提高灰化率分布，并且可以容易且高精度地实现灵敏的图案减肥。

10. 发明申请

US20080187654A1 Process for forming a plated film, and process for fabricating a magnetic device and perpendicular magnetic recording head 有权
标题翻译：用于形成镀膜的方法，以及用于制造磁性装置和垂直磁记录头的方法
公开(公告)号：US20080187654A1
公开(公告)日：2008-08-07
申请号：US11671758
申请日：2007-02-06
申请人： Akifumi Kamijima , Hitoshi Hatate , Hideyuki Yatsu
发明人： Akifumi Kamijima , Hitoshi Hatate , Hideyuki Yatsu
IPC分类号： B05D5/00 , B05D3/00
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： The process of forming a plated film according to the invention is designed such that the surface asperities of the inorganic film formed by the tracing of a standing wave occurring at the inner wall surface of the first opening in the resist at the resist pattern-formation step are reduced or eliminated. It is thus possible to form, efficiently yet in a short period of time, a high aspect-ratio plated film portion having an aspect ratio of greater than 1. In addition, the formed plated film quality is extremely improved for the absence of pores (cavities).
摘要翻译：根据本发明的形成镀膜的方法被设计成使得通过在抗蚀剂图案形成步骤中在抗蚀剂中的第一开口的内壁表面处产生的驻波的描绘形成的无机膜的表面粗糙度被减少或消除。因此，可以在短时间内有效地形成纵横比大于1的高纵横比电镀膜部分。此外，形成的镀膜质量在没有孔的情况下极大地改善（空腔）。

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