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    • 2. 发明申请
    • ALIGNMENT METHOD AND APPARATUS OF MASK PATTERN
    • 掩模图案的对准方法和装置
    • US20090284719A1
    • 2009-11-19
    • US12025285
    • 2008-05-15
    • Akifumi KAMIJIMAHideyuki YATSUHitoshi HATATE
    • Akifumi KAMIJIMAHideyuki YATSUHitoshi HATATE
    • G03B27/68G03B27/42
    • G03F7/7085G03F7/70616G03F7/70633G03F7/70783G03F9/7003
    • An alignment method of mask patterns in patterning processes includes forming a first layer by transferring a first mask pattern onto a wafer or a layer formed on the wafer, and forming a second layer by transferring a second mask pattern onto the first layer. The method particularly includes a first alignment step of performing, when forming the first layer, alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern, and alignment based on an amount of deviation of superposition of the second layer pattern on the first layer pattern. The deviation is caused by linear expansion and contraction of a wafer and caused by an orthogonal error between a wafer and a mask pattern, and also the deviation is obtained by measuring in advance in pattering processes successively performed for a plurality of wafers. The method also includes a second alignment step of performing, when forming the second layer, only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.
    • 图案化处理中的掩模图案的对准方法包括通过将第一掩模图案转印到晶片上或形成在晶片上的层来形成第一层,以及通过将第二掩模图案转印到第一层上而形成第二层。 该方法特别包括第一对准步骤,当形成第一层时,进行对准以最小化晶片的中心位置和第一掩模图案的中心位置之间的偏移和晶片与第一掩模图案之间的残余旋转误差 并且基于第一层图案上的第二层图案的叠加的偏移量进行对准。 该偏差是由晶片的线性膨胀和收缩引起的,并且由晶片和掩模图案之间的正交误差引起,并且通过在多个晶片中连续执行的图案处理中预先测量来获得偏差。 该方法还包括第二对准步骤,当形成第二层时,仅进行对准以最小化第一层图案的中心位置和第二掩模图案的中心位置之间的偏移和第一层图案之间的残余旋转误差 和第二掩模图案。
    • 3. 发明申请
    • PLANARIZING METHOD
    • 平面化方法
    • US20090039056A1
    • 2009-02-12
    • US11837189
    • 2007-08-10
    • Akifumi KAMIJIMAHideyuki YATSUHitoshi HATATE
    • Akifumi KAMIJIMAHideyuki YATSUHitoshi HATATE
    • B44C1/22
    • G03F7/2026G03F7/00G11B5/3163
    • Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.
    • 提供一种平面化方法,其中可以进行具有高平坦度的平坦化,而不受所施加的抗蚀剂膜中的膜厚度的分布的限制。 平面化方法包括以下步骤:在基板上形成的平坦化膜上形成抗蚀剂膜; 将形成有平坦化膜的区域的各个部分中的曝光量曝光在抗蚀剂膜上,曝光光的量被确定为实现用于平版化抗蚀剂的膜厚度 各部分电影; 显影曝光的抗蚀剂膜,以形成具有受控的膜厚分布的抗蚀剂膜图案; 并蚀刻抗蚀剂膜图案和待平坦化的膜,直到消除要平坦化的膜的厚度消除量。