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    • 4. 发明申请
    • WAFER CARRIER WITH SELECTIVE CONTROL OF EMISSIVITY
    • 具有选择性控制的波浪载体
    • US20120171377A1
    • 2012-07-05
    • US12981864
    • 2010-12-30
    • Boris VolfGuanghua WeiYuliy Rashkovsky
    • Boris VolfGuanghua WeiYuliy Rashkovsky
    • C23C16/46C23C16/458
    • H01L21/68757H01L21/68771
    • A wafer carrier for use in a chemical vapor deposition apparatus includes at least one region on its outer surface having a substantially different (e.g., lower) emissivity than other regions on the outer surface. The modified emissivity region may be located on the outer edge, the top surface, and/or the bottom surface of the carrier. The region may be associated with one or more wafer pockets of the wafer carrier. The modified emissivity region may be shaped and sized so as to modify the heat transmission through the region, and thereby increase the temperature uniformity across portions of the top surface of the wafer carrier or across individual wafers. The modified emissivity region may be provided by a coating on the outer surface of the wafer carrier.
    • 用于化学气相沉积设备的晶片载体包括在其外表面上的至少一个区域,其具有与外表面上的其它区域基本上不同的(例如,较低的)发射率。 修改的发射率区域可以位于载体的外边缘,顶表面和/或底表面上。 该区域可以与晶片载体的一个或多个晶片凹坑相关联。 修改的发射率区域可以被成形和定尺寸,以便改变通过该区域的热传递,从而增加晶片载体的顶表面的部分或跨单独晶片的温度均匀性。 修改的发射率区域可以由晶片载体的外表面上的涂层提供。