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1. 发明申请

US20050199583A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 有权
公开(公告)号：US20050199583A1
公开(公告)日：2005-09-15
申请号：US11029218
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , B33Y10/00 , C23C18/1605 , C23C18/1608 , C23C18/1653 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

2. 发明申请

US20050173374A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 有权
公开(公告)号：US20050173374A1
公开(公告)日：2005-08-11
申请号：US11029014
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23C18/16 , C23F1/00 , C25D5/02 , C25D5/10 , C25D5/34 , H01L21/288 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： B44C1/22 , B33Y10/00 , B81C1/00492 , C03C15/00 , C03C25/68 , C23C18/1605 , C23C18/161 , C23C18/1651 , C23C18/1653 , C23C18/405 , C23F1/00 , C25D1/003 , C25D5/02 , C25D5/10 , H01L21/2885 , H01L21/44 , H01L21/4763 , H01L21/76885
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

3. 发明申请

US20050215046A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
公开(公告)号：US20050215046A1
公开(公告)日：2005-09-29
申请号：US11029215
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/20 , C23C18/1605 , C23C18/1608 , C23C18/165 , C25D1/003 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

4. 发明申请

US20050194258A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
公开(公告)号：US20050194258A1
公开(公告)日：2005-09-08
申请号：US11029179
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , C23C18/1605 , C23C18/1608 , C23C18/165 , C23C18/405 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

5. 发明申请

US20050176238A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
公开(公告)号：US20050176238A1
公开(公告)日：2005-08-11
申请号：US11029172
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , C23C18/1605 , C23C18/1608 , C23C18/165 , C23C18/405 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

6. 发明申请

US20050032362A1 Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures 有权
标题翻译：电化学制造方法包括在形成多层三维结构期间使用表面处理来减少过度平坦化和/或平坦化
公开(公告)号：US20050032362A1
公开(公告)日：2005-02-10
申请号：US10841100
申请日：2004-05-07
申请人： Adam Cohen , Dennis Smalley , Michael Lockard , Qui Le
发明人： Adam Cohen , Dennis Smalley , Michael Lockard , Qui Le
IPC分类号： C23C18/16 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/768
CPC分类号： H01L21/288 , B33Y10/00 , C23C18/1605 , C25D5/022 , C25D5/10 , H01L21/311 , H01L21/7682 , H01L21/76879
摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.
摘要翻译：从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面的第二种材料。第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除材料。在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

7. 发明申请

US20070015367A1 Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures 有权
标题翻译：电化学制造方法包括在形成多层三维结构期间使用表面处理来减少过度平坦化和/或平坦化
公开(公告)号：US20070015367A1
公开(公告)日：2007-01-18
申请号：US11523206
申请日：2006-09-19
申请人： Adam Cohen , Dennis Smalley , Michael Lockard , Qui Le
发明人： Adam Cohen , Dennis Smalley , Michael Lockard , Qui Le
IPC分类号： H01L21/311
CPC分类号： H01L21/288 , B33Y10/00 , C23C18/1605 , C25D5/022 , C25D5/10 , H01L21/311 , H01L21/7682 , H01L21/76879
摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.
摘要翻译：从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面的第二种材料。第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除材料。在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

8. 发明申请

US20050230261A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
标题翻译：电介质材料和/或使用电介质基片的电化学制造方法
公开(公告)号：US20050230261A1
公开(公告)日：2005-10-20
申请号：US11029216
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , C23C18/1605 , C23C18/1608 , C23C18/165 , C23C18/1653 , C23C18/405 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.
摘要翻译：本发明的一些实施例涉及在电介质或部分电介质基底上建立单层或多层结构的技术。某些实施方案将种子层材料直接沉积到基底材料上，而其它实施例使用中间粘合层材料。一些实施例使用不同种子层材料和/或用于牺牲和结构导电建筑材料的粘合层材料。一些实施例将种子层和/或粘合层材料应用于有选择性的方式，而其它实施例以毯子的方式应用材料。一些实施例通过平面化操作去除外来沉积物（例如沉积到不想要形成层的一部分的区域），而其他实施例通过蚀刻操作去除外来材料。其它实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种电介质材料形成的多层中尺度或微结构结构的电化学制造。在一些实施方案中，电介质材料是可UV固化的光聚合物。

9. 发明申请

US20050202180A1 Electrochemical fabrication methods for producing multilayer structures including the use of diamond machining in the planarization of deposits of material 审中-公开
标题翻译：用于生产多层结构的电化学制造方法，包括在平坦化材料沉积中使用金刚石加工
公开(公告)号：US20050202180A1
公开(公告)日：2005-09-15
申请号：US11029165
申请日：2005-01-03
申请人： Adam Cohen , Uri Frodis , Michael Lockard , Ananda Kumar , Gang Zhang , Dennis Smalley
发明人： Adam Cohen , Uri Frodis , Michael Lockard , Ananda Kumar , Gang Zhang , Dennis Smalley
IPC分类号： B05D1/38 , C08K3/00 , C25D3/30 , C25D3/38 , C25D3/48 , C25D5/02 , C25D5/10 , C25D21/12 , H01L21/288 , H01L21/301 , H01L21/302 , H01L21/4763 , H01L21/768
CPC分类号： C25D5/48 , B33Y10/00 , B81C1/00492 , B81C99/0065 , B81C2201/0104 , B81C2201/0197 , C25D1/00 , C25D1/003 , C25D5/022 , C25D5/10 , C25D21/12 , H01L21/2885 , H01L21/76885 , Y10T156/1052
摘要： Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.
摘要翻译：公开了用于形成单层和多层中尺度和微结构的电化学制造方法，其包括使用金刚石加工（例如飞切或车削）来平坦化层。一些实施例集中于可用于电化学制造的牺牲和结构材料的系统，并且可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn，和Au和Sn-Pb），其中第一材料或材料是结构材料，第二材料是牺牲材料）。一些实施例着重于在使用金刚石加工以平面化使用难以加工的材料进行电化学制造的结构（例如，通过沉积难以机械材料选择性且潜在地具有少量多余电镀厚度和/或预加工沉积到所需表面水平的小增量（例如使用研磨或粗切割操作），然后使用金刚石飞切切割来完成其加工，和/或从硬质材料的薄壁区域形成结构或部分结构而不是结构材料的宽固体区域。

10. 发明申请

US20050189959A1 Electrochemical fabrication process for forming multilayer multimaterial microprobe structures 审中-公开
标题翻译：用于形成多层多材料微探针结构的电化学制造工艺
公开(公告)号：US20050189959A1
公开(公告)日：2005-09-01
申请号：US11029182
申请日：2005-01-03
申请人： Adam Cohen , Ananda Kumar , Michael Lockard , Dennis Smalley
发明人： Adam Cohen , Ananda Kumar , Michael Lockard , Dennis Smalley
IPC分类号： G01R31/02 , H01L21/20
CPC分类号： B81C1/00111 , C23C18/1605 , C23C18/1651 , C25D1/003 , G01R3/00
摘要： Some embodiments of the invention are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that partially coats the surface of the probe. Other embodiments are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that completely coats the surface of each layer from which the probe is formed including interlayer regions. These first two groups of embodiments incorporate both the core material and the coating material during the formation of each layer. Still other embodiments are directed to the electrochemical fabrication of microprobe arrays that are partially encapsulated by a dielectric material during a post layer formation coating process. In even further embodiments, the electrochemical fabrication of microprobes from two or more materials may occur by incorporating a coating material around each layer of the structure without locating the coating material in inter-layer regions.
摘要翻译：本发明的一些实施方案涉及由芯材料和部分涂覆探针的表面的材料形成的微针的电化学制造。其它实施方案涉及由核心材料形成的微结构的电化学制造，以及完全涂覆形成探针的每个层的表面的材料，包括中间层区域。这些前两组实施例在形成每个层期间都包括芯材料和涂层材料。另外的其它实施例涉及在后层形成涂覆过程中由电介质材料部分封装的微探针阵列的电化学制造。在甚至进一步的实施方案中，来自两种或更多种材料的微结构的电化学制造可以通过在结构的每一层周围并入涂层材料而不将涂层材料定位在层间区域中而进行。

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