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1. 发明授权

US07485950B2 Impact ionization amplification apparatus method and system 失效
标题翻译：冲击电离放大装置的方法和系统
公开(公告)号：US07485950B2
公开(公告)日：2009-02-03
申请号：US11457710
申请日：2006-07-14
申请人： Aaron R. Hawkins , Hong-Wei Lee
发明人： Aaron R. Hawkins , Hong-Wei Lee
IPC分类号： H01L29/06
CPC分类号： H01L29/872 , H01L29/866 , H01L31/101
摘要： An input signal comprising electronic carriers is injected into an impact ionization device with a high electric field whereupon the electronic carriers are accelerated toward an electron collector or hole sink and subsequently ionize additional electrons and holes that accelerated toward the electron collector and hole sink respectively. When properly biased an avalanche effect may occur that is proportional to the current injected into the impact ionization device via the input electrode. As a result, the input signal is amplified to provide an amplified signal. The described amplifier may be integrated with an input device such as a photodiode, and a transimpedance output amplifier onto a common substrate resulting in high performance high density sensor arrays and the like.
摘要翻译：包括电子载体的输入信号被注入到具有高电场的冲击电离装置中，随后电子载体朝向电子收集器或空穴吸收器加速，并且随后电离分别向电子收集器和空穴吸收加速的附加电子和空穴。当适当偏置时，可能发生与通过输入电极注入到冲击电离装置中的电流成比例的雪崩效应。结果，输入信号被放大以提供放大的信号。所描述的放大器可以与诸如光电二极管的输入设备和跨导输出放大器集成到公共衬底上，从而产生高性能的高密度传感器阵列等。

2. 发明申请

US20080210859A1 COAXIAL HYBRID RADIO FREQUENCY ION TRAP MASS ANALYZER 有权
标题翻译：同轴混合无线电频率离子质谱分析仪
公开(公告)号：US20080210859A1
公开(公告)日：2008-09-04
申请号：US12036999
申请日：2008-02-25
申请人： Samuel E. Tolley , Daniel E. Austin , Aaron R. Hawkins , Edgar D. Lee
发明人： Samuel E. Tolley , Daniel E. Austin , Aaron R. Hawkins , Edgar D. Lee
IPC分类号： B01D59/44
CPC分类号： H01J49/424 , H01J49/4235
摘要： A coaxial hybrid ion trap that uses two substantially planar opposing plates to generate electrical focusing fields that simultaneously generate at least two different types or shapes of trapping regions, wherein a first trapping region is a quadrupole trapping region disposed coaxially with respect to the opposing plates, and wherein a second trapping region is a toroidal ion trap having a toroidal trapping region that is simultaneously created around the quadrupole trapping region.
摘要翻译：一种同轴混合离子阱，其使用两个基本上平面的相对板来产生电聚焦场，其同时产生至少两种不同类型或形状的捕获区域，其中第一捕获区域是相对于相对的板同轴设置的四极捕获区域，并且其中第二捕获区域是具有围绕所述四极捕获区域同时产生的环形陷阱区域的环形离子阱。

3. 发明授权

US07723679B2 Coaxial hybrid radio frequency ion trap mass analyzer 有权
标题翻译：同轴混合射频离子阱质谱仪
公开(公告)号：US07723679B2
公开(公告)日：2010-05-25
申请号：US12036999
申请日：2008-02-25
申请人： Samuel E. Tolley , Daniel E. Austin , Aaron R. Hawkins , Edgar D. Lee
发明人： Samuel E. Tolley , Daniel E. Austin , Aaron R. Hawkins , Edgar D. Lee
IPC分类号： B01D59/44 , H01J49/00
CPC分类号： H01J49/424 , H01J49/4235
摘要： A coaxial hybrid ion trap that uses two substantially planar opposing plates to generate electrical focusing fields that simultaneously generate at least two different types or shapes of trapping regions, wherein a first trapping region is a quadrupole trapping region disposed coaxially with respect to the opposing plates, and wherein a second trapping region is a toroidal ion trap having a toroidal trapping region that is simultaneously created around the quadrupole trapping region.
摘要翻译：一种同轴混合离子阱，其使用两个基本上平面的相对板来产生电聚焦场，其同时产生至少两种不同类型或形状的捕获区域，其中第一捕获区域是相对于相对的板同轴设置的四极捕获区域，并且其中第二捕获区域是具有围绕所述四极捕获区域同时产生的环形陷阱区域的环形离子阱。

4. 发明授权

US6130441A Semiconductor hetero-interface photodetector 有权
公开(公告)号：US6130441A
公开(公告)日：2000-10-10
申请号：US272426
申请日：1999-03-19
申请人： John E. Bowers , Aaron R. Hawkins
发明人： John E. Bowers , Aaron R. Hawkins
IPC分类号： H01L27/144 , H01L31/0216 , H01L31/09 , H01L31/107 , H01L31/072 , H01L31/0328 , H01L31/0336 , H01L31/109
CPC分类号： H01L31/02161 , H01L27/1446 , H01L31/09 , H01L31/1075
摘要： By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.

5. 发明授权

US06465803B1 Semiconductor hetero-interface photodetector 失效
标题翻译：半导体异质界面光电探测器
公开(公告)号：US06465803B1
公开(公告)日：2002-10-15
申请号：US09597970
申请日：2000-06-20
申请人： John E. Bowers , Aaron R. Hawkins
发明人： John E. Bowers , Aaron R. Hawkins
IPC分类号： H01L2906
CPC分类号： H01L31/02161 , H01L27/1446 , H01L31/09 , H01L31/1075
摘要： By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III—V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.
摘要翻译：通过使用晶片熔合，可以实现与其他电子器件集成的用于光电探测器和光电探测器的各种结构。使用硅作为倍增区域和III-V族化合物作为吸收区域产生高效且针对具体应用而定制的光电探测器。产生响应于光谱的不同区域或具有更高效率的器件。

6. 发明授权

US06147391A Semiconductor hetero-interface photodetector 有权
标题翻译：半导体异质界面光电探测器
公开(公告)号：US06147391A
公开(公告)日：2000-11-14
申请号：US272870
申请日：1999-03-19
申请人： John E. Bowers , Aaron R. Hawkins
发明人： John E. Bowers , Aaron R. Hawkins
IPC分类号： H01L31/0216 , H01L31/107 , H01L27/14 , H01L33/00
CPC分类号： H01L31/02161 , H01L31/1075
摘要： A method of processing semiconductor films and layers, utilizing heterojunctions, to create a photodetector. Novel combinations of materials, such as silicon and indium gallium arsenide (InGaAs) are combined using wafer fusion techniques to create heterojunctions that cannot be created by any other growth methods. Devices responsive to different regions of the optical spectrum or that have higher efficiencies are created.
摘要翻译：利用异质结处理半导体膜和层的方法来制造光电探测器。使用晶片融合技术将诸如硅和砷化铟镓（InGaAs）的材料的新型组合组合以产生不能由任何其它生长方法产生的异质结。产生响应于光谱的不同区域或具有更高效率的装置。

7. 发明授权

US6074892A Semiconductor hetero-interface photodetector 失效
公开(公告)号：US6074892A
公开(公告)日：2000-06-13
申请号：US801456
申请日：1997-02-18
申请人： John E. Bowers , Aaron R. Hawkins
发明人： John E. Bowers , Aaron R. Hawkins
IPC分类号： H01L27/144 , H01L31/0216 , H01L31/09 , H01L31/107 , H01L21/70
CPC分类号： H01L31/02161 , H01L27/1446 , H01L31/09 , H01L31/1075
摘要： By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.

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