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1. 发明授权

US09042072B2 Method and system for lightning protection with distributed transient voltage suppression 有权
标题翻译：具有分布式瞬态电压抑制的雷电保护方法和系统
公开(公告)号：US09042072B2
公开(公告)日：2015-05-26
申请号：US13436060
申请日：2012-03-30
申请人： Aaron Jay Knobloch , Emad Andarawis Andarawis , Harry Kirk Mathews, Jr. , Avinash Srikrishnan Kashyap
发明人： Aaron Jay Knobloch , Emad Andarawis Andarawis , Harry Kirk Mathews, Jr. , Avinash Srikrishnan Kashyap
IPC分类号： H02H3/22 , H01B7/28 , H02H1/00 , H02H1/04 , H02H9/06
CPC分类号： H01B7/2813 , H01L29/0657 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/861 , H02H9/042 , H02H9/044 , Y10T29/49117
摘要： A method of method of forming a wide band-gap semiconductor transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a connecting component configured to electrically couple a first electrical component to a second electrical component located remotely from the first electrical component through one or more electrical conduits and a transient voltage suppressor device positioned within the connecting component and electrically coupled to the one or more electrical conduits wherein the TVS device includes a wide band-gap semiconductor material.
摘要翻译：提供了形成宽带隙半导体瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统的方法。 TVS组件包括连接部件，其被配置为将第一电气部件电耦合到远离第一电气部件的第二电气部件，该电气部件通过一个或多个电气导管和位于连接部件内的电气耦合到该电气部件的瞬态电压抑制器或更多的电导管，其中TVS器件包括宽带隙半导体材料。

2. 发明申请

US20130258541A1 METHOD AND SYSTEM FOR LIGHTNING PROTECTION WITH DISTRIBUTED TRANSIENT VOLTAGE SUPPRESSION 有权
标题翻译：用于具有分布式瞬态电压抑制的雷击保护方法和系统
公开(公告)号：US20130258541A1
公开(公告)日：2013-10-03
申请号：US13436060
申请日：2012-03-30
申请人： Aaron Jay Knobloch , Emad Andarawis Andarawis , Harry Kirk Mathews, JR. , Avinash Srikrishnan Kashyap
发明人： Aaron Jay Knobloch , Emad Andarawis Andarawis , Harry Kirk Mathews, JR. , Avinash Srikrishnan Kashyap
IPC分类号： H02H3/22 , H01R43/00
CPC分类号： H01B7/2813 , H01L29/0657 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/861 , H02H9/042 , H02H9/044 , Y10T29/49117
摘要： A method of method of forming a wide band-gap semiconductor transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a connecting component configured to electrically couple a first electrical component to a second electrical component located remotely from the first electrical component through one or more electrical conduits and a transient voltage suppressor device positioned within the connecting component and electrically coupled to the one or more electrical conduits wherein the TVS device includes a wide band-gap semiconductor material.
摘要翻译：提供了形成宽带隙半导体瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统的方法。 TVS组件包括连接部件，其被配置为将第一电气部件电耦合到远离第一电气部件的第二电气部件，该电气部件通过一个或多个电气导管和位于连接部件内的电气耦合到该电气部件的瞬态电压抑制器或更多的电导管，其中TVS器件包括宽带隙半导体材料。

3. 发明申请

US20130105816A1 METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSORS 有权
公开(公告)号：US20130105816A1
公开(公告)日：2013-05-02
申请号：US13281638
申请日：2011-10-26
申请人： Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
发明人： Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
IPC分类号： H01L29/16 , H01L21/56 , H01L29/12
CPC分类号： H01L21/56 , H01L23/3185 , H01L29/0657 , H01L29/1608 , H01L29/2003 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

4. 发明授权

US08835976B2 Method and system for ultra miniaturized packages for transient voltage suppressors 有权
标题翻译：用于瞬态电压抑制器的超小尺寸封装的方法和系统
公开(公告)号：US08835976B2
公开(公告)日：2014-09-16
申请号：US13420056
申请日：2012-03-14
申请人： Avinash Srikrishnan Kashyap , Emad Andarawis Andarawis , David Mulford Shaddock
发明人： Avinash Srikrishnan Kashyap , Emad Andarawis Andarawis , David Mulford Shaddock
IPC分类号： H01L29/66 , H01L21/332
CPC分类号： H02H1/04 , H01L21/50 , H01L21/8213 , H01L21/8252 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/96 , H01L27/0255 , H01L27/0605 , H01L27/0814 , H01L29/0661 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/45 , H01L29/861 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/13109 , H01L2224/13139 , H01L2224/13144 , H01L2224/13155 , H01L2224/16225 , H01L2224/24137 , H01L2224/81203 , H01L2224/81815 , H01L2224/81825 , H01L2924/10272 , H01L2924/12036 , H01L2924/12041 , H01L2924/15192 , H01L2924/3025 , H02H3/20 , H01L2924/0105 , H01L2924/00
摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The transient voltage suppressor (TVS) assembly includes a semiconductor die including a contact surface on a single side of the die, the die further including a substrate comprising a layer of at least one of an electrical insulator material, a semi-insulating material, and a first wide band gap semiconductor having a conductivity of a first polarity, at least a TVS device including a plurality of wide band gap semiconductor layers formed on the substrate; a first electrode coupled in electrical contact with the TVS device and extending to the contact surface, and a second electrode electrically coupled to the substrate extending to the contact surface.
摘要翻译：提供了形成碳化硅瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统。瞬态电压抑制器（TVS）组件包括一个半导体管芯，该半导体管芯包括在管芯单侧的接触表面，该管芯还包括一个衬底，该衬底包括一层电绝缘材料，半绝缘材料和具有第一极性的导电性的第一宽带隙半导体，至少包括形成在所述基板上的多个宽带隙半导体层的TVS器件; 与TVS器件电接触并延伸到接触表面的第一电极，以及电耦合到延伸到接触表面的衬底的第二电极。

5. 发明申请

US20130240903A1 METHOD AND SYSTEM FOR ULTRA MINIATURIZED PACKAGES FOR TRANSIENT VOLTAGE SUPPRESSORS 有权
标题翻译：用于瞬态电压抑制器的超小型封装的方法和系统
公开(公告)号：US20130240903A1
公开(公告)日：2013-09-19
申请号：US13420056
申请日：2012-03-14
申请人： Avinash Srikrishnan Kashyap , Emad Andarawis Andarawis , David Mulford Shaddock
发明人： Avinash Srikrishnan Kashyap , Emad Andarawis Andarawis , David Mulford Shaddock
IPC分类号： H01L29/20 , H01L29/161 , H01L21/50
CPC分类号： H02H1/04 , H01L21/50 , H01L21/8213 , H01L21/8252 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/96 , H01L27/0255 , H01L27/0605 , H01L27/0814 , H01L29/0661 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/45 , H01L29/861 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/13109 , H01L2224/13139 , H01L2224/13144 , H01L2224/13155 , H01L2224/16225 , H01L2224/24137 , H01L2224/81203 , H01L2224/81815 , H01L2224/81825 , H01L2924/10272 , H01L2924/12036 , H01L2924/12041 , H01L2924/15192 , H01L2924/3025 , H02H3/20 , H01L2924/0105 , H01L2924/00
摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The transient voltage suppressor (TVS) assembly includes a semiconductor die including a contact surface on a single side of the die, the die further including a substrate comprising a layer of at least one of an electrical insulator material, a semi-insulating material, and a first wide band gap semiconductor having a conductivity of a first polarity, at least a TVS device including a plurality of wide band gap semiconductor layers formed on the substrate; a first electrode coupled in electrical contact with the TVS device and extending to the contact surface, and a second electrode electrically coupled to the substrate extending to the contact surface.
摘要翻译：提供了形成碳化硅瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统。瞬态电压抑制器（TVS）组件包括一个半导体管芯，该半导体管芯包括在管芯单侧的接触表面，该管芯还包括一个衬底，该衬底包括一层电绝缘材料，半绝缘材料和具有第一极性的导电性的第一宽带隙半导体，至少包括形成在所述基板上的多个宽带隙半导体层的TVS器件; 与TVS器件电接触并延伸到接触表面的第一电极，以及电耦合到延伸到接触表面的衬底的第二电极。

6. 发明授权

US08530902B2 System for transient voltage suppressors 有权
标题翻译：瞬态电压抑制器系统
公开(公告)号：US08530902B2
公开(公告)日：2013-09-10
申请号：US13281638
申请日：2011-10-26
申请人： Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
发明人： Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
IPC分类号： H01L29/15
CPC分类号： H01L21/56 , H01L23/3185 , H01L29/0657 , H01L29/1608 , H01L29/2003 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
摘要翻译：提供了形成碳化硅瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统。 TVS组件包括台面结构中的半导体管芯，其包括具有第一极性的导电率的第一宽带隙半导体的第一层，具有第二极导电率的第一或第二宽带隙半导体的第二层极性与第一层电接触，其中第二极性不同于第一极性。 TVS组件还包括具有与第二层电接触的第一极性的导电性的第一，第二或第三宽带隙半导体的第三层。相对于具有第一极性的导电性的层，具有第二极性的导电性的层被轻掺杂。

7. 发明授权

US08730629B2 Variable breakdown transient voltage suppressor 有权
标题翻译：可变击穿瞬态电压抑制器
公开(公告)号：US08730629B2
公开(公告)日：2014-05-20
申请号：US13334598
申请日：2011-12-22
申请人： Avinash Srikrishnan Kashyap , Stanislav Ivanovich Soloviev
发明人： Avinash Srikrishnan Kashyap , Stanislav Ivanovich Soloviev
IPC分类号： H02H3/22
CPC分类号： H01L29/36 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/861 , H01L29/8618
摘要： A semiconductor die includes a substrate comprising a first layer of a first wide band gap semiconductor material having a first conductivity, a second layer of a second wide band gap semiconductor material having a second conductivity different from the first conductivity, in electrical contact with the first layer, a third layer of a third wide band gap semiconductor material having a third conductivity different from the first conductivity and second conductivity, in electrical contact with the second layer, a fourth layer of a fourth wide band gap semiconductor material having the second conductivity, in electrical contact with the third layer, and a fifth layer of a fifth wide band gap semiconductor material having the first conductivity and in electrical contact with the fourth layer, wherein the first layer, the second layer, the third layer, the fourth layer, and the fifth layer are sequentially arranged to form a structure.
摘要翻译：半导体管芯包括：衬底，其包括具有第一导电性的第一宽带隙半导体材料的第一层，具有与第一导电性不同的第二导电性的第二宽带隙半导体材料的第二层与第一导电具有与第一导电性和第二导电性不同的第三导电性的与第二层电接触的第三宽带隙半导体材料的第三层，具有第二导电性的第四宽带隙半导体材料的第四层，与第三层电接触，以及具有第一导电性并与第四层电接触的第五宽带隙半导体材料的第五层，其中第一层，第二层，第三层，第四层，并且顺序地布置第五层以形成结构。

8. 发明申请

US20130163139A1 VARIABLE BREAKDOWN TRANSIENT VOLTAGE SUPPRESSOR 有权
标题翻译：可变断开瞬态电压抑制器
公开(公告)号：US20130163139A1
公开(公告)日：2013-06-27
申请号：US13334598
申请日：2011-12-22
申请人： Avinash Srikrishnan Kashyap , Stanislav Ivanovich Soloviev
发明人： Avinash Srikrishnan Kashyap , Stanislav Ivanovich Soloviev
IPC分类号： H02H3/22 , H01L29/20 , H01L21/66 , H01L29/16
CPC分类号： H01L29/36 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/861 , H01L29/8618
摘要： A semiconductor die includes a substrate comprising a first layer of a first wide band gap semiconductor material having a first conductivity, a second layer of a second wide band gap semiconductor material having a second conductivity different from the first conductivity, in electrical contact with the first layer, a third layer of a third wide band gap semiconductor material having a third conductivity different from the first conductivity and second conductivity, in electrical contact with the second layer, a fourth layer of a fourth wide band gap semiconductor material having the second conductivity, in electrical contact with the third layer, and a fifth layer of a fifth wide band gap semiconductor material having the first conductivity and in electrical contact with the fourth layer, wherein the first layer, the second layer, the third layer, the fourth layer, and the fifth layer are sequentially arranged to form a structure.
摘要翻译：半导体管芯包括：衬底，其包括具有第一导电性的第一宽带隙半导体材料的第一层，具有与第一导电性不同的第二导电性的第二宽带隙半导体材料的第二层与第一导电具有与第一导电性和第二导电性不同的第三导电性的与第二层电接触的第三宽带隙半导体材料的第三层，具有第二导电性的第四宽带隙半导体材料的第四层，与第三层电接触，以及具有第一导电性并与第四层电接触的第五宽带隙半导体材料的第五层，其中第一层，第二层，第三层，第四层，并且顺序地布置第五层以形成结构。

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