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1. 发明公开

US20230227965A1 METHOD AND APPARATUS FOR FORMING A PATTERNED STRUCTURE ON A SUBSTRATE 审中-公开
公开(公告)号：US20230227965A1
公开(公告)日：2023-07-20
申请号：US18153575
申请日：2023-01-12
申请人： ASM IP Holding, B.V.
发明人： Shaoren Deng , David Kurt de Roest , Vincent Vandalon , Anirudhan Chandrasekaran , YongGyu Han , Marko Tuominen
IPC分类号： C23C16/04 , C23C16/02 , C23C16/455 , C23C16/513 , C23C16/56
CPC分类号： C23C16/042 , C23C16/0272 , C23C16/0227 , C23C16/45523 , C23C16/513 , C23C16/56
摘要： The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.

2. 发明授权

US11094546B2 Method for selectively depositing a metallic film on a substrate 有权
公开(公告)号：US11094546B2
公开(公告)日：2021-08-17
申请号：US16517122
申请日：2019-07-19
申请人： ASM IP Holding B.V.
发明人： Delphine Longrie , David Kurt de Roest
IPC分类号： H01L21/285 , H01L21/3065 , H01L21/28 , H01L21/3205 , H01L21/768 , C23C16/06 , C23C16/455 , H01L21/48 , C23C16/04 , H01L21/321 , C23C16/02 , C23C16/08
摘要： A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

3. 发明申请

US20190109009A1 METHOD FOR SELECTIVELY DEPOSITING A METALLIC FILM ON A SUBSTRATE 审中-公开
公开(公告)号：US20190109009A1
公开(公告)日：2019-04-11
申请号：US15726222
申请日：2017-10-05
申请人： ASM IP Holding B.V.
发明人： Delphine Longrie , David Kurt de Roest
IPC分类号： H01L21/285 , H01L21/3065 , H01L21/28 , H01L21/3205 , C23C16/04 , C23C16/06 , C23C16/455 , H01L21/48 , H01L21/768
CPC分类号： H01L21/28562 , C23C16/0209 , C23C16/04 , C23C16/047 , C23C16/06 , C23C16/08 , C23C16/45527 , H01L21/28229 , H01L21/30655 , H01L21/32051 , H01L21/4846 , H01L21/76879
摘要： A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

4. 发明授权

US11644758B2 Structures and methods for use in photolithography 有权
公开(公告)号：US11644758B2
公开(公告)日：2023-05-09
申请号：US17375235
申请日：2021-07-14
申请人： ASM IP Holding B.V.
发明人： Daniele Piumi , David Kurt de Roest
IPC分类号： G03F7/20 , H01L23/00
CPC分类号： G03F7/70783 , G03F7/70033 , H01L23/562
摘要： Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

5. 发明申请

US20200013629A1 SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
公开(公告)号：US20200013629A1
公开(公告)日：2020-01-09
申请号：US16468258
申请日：2017-12-08
申请人： ASM IP Holding B.V.
发明人： David Kurt de Roest , Werner Knaepen , Krzysztof Kachel
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/324
摘要： An apparatus and a method for forming a structure within a semiconductor processing apparatus are disclosed. The apparatus includes a first reaction chamber, the first reaction chamber configured to hold at least one substrate having a first layer. The apparatus also includes a precursor delivery system configured to perform an infiltration by sequentially pulsing a first precursor and a second precursor on the substrate. The apparatus may also include a first removal system configured for removing at least a portion of the first layer disposed on the substrate while leaving an infiltrated material, wherein the infiltration and the removing at least a portion of the first layer take place within the same semiconductor processing apparatus. A method of forming a structure within a semiconductor processing apparatus is also disclosed, the method including providing a substrate for processing in a reaction chamber, the substrate having a first layer disposed on the substrate. The method may also include performing a first layer infiltration by sequentially pulsing a first precursor and a second precursor on the substrate, wherein an infiltrated material forms in the first layer from the reaction of the first precursor and the second precursor. The method may also include removing at least a portion of the first layer disposed on the substrate after performing the infiltration, wherein the infiltration and the removing at least a portion of the first layer take place with the same semiconductor processing apparatus.

6. 发明申请

US20190163056A1 METHOD OF FORMING AN ENHANCED UNEXPOSED PHOTORESIST LAYER 审中-公开
公开(公告)号：US20190163056A1
公开(公告)日：2019-05-30
申请号：US16167164
申请日：2018-10-22
申请人： ASM IP Holding B.V.
发明人： Jan Willem Maes , Krzysztof Kamil Kachel , David Kurt de Roest
IPC分类号： G03F7/004 , G03F7/20 , G03F7/16
摘要： The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

7. 发明申请

US20220019149A1 STRUCTURES AND METHODS FOR USE IN PHOTOLITHOGRAPHY 有权
公开(公告)号：US20220019149A1
公开(公告)日：2022-01-20
申请号：US17375235
申请日：2021-07-14
申请人： ASM IP Holding B.V.
发明人： Daniele Piumi , David Kurt de Roest
IPC分类号： G03F7/20 , H01L23/00
摘要： Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

8. 发明授权

US11139163B2 Selective deposition of SiOC thin films 有权
公开(公告)号：US11139163B2
公开(公告)日：2021-10-05
申请号：US17064865
申请日：2020-10-07
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Maes , David Kurt de Roest , Oreste Madia
IPC分类号： H01L21/02 , H01L21/311
摘要： Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

9. 发明申请

US20210033977A1 SUBSTRATE PROCESSING APPARATUS AND METHOD 有权
公开(公告)号：US20210033977A1
公开(公告)日：2021-02-04
申请号：US16931275
申请日：2020-07-16
申请人： ASM IP Holding B.V.
发明人： Ivo Raaijmakers , Daniele Piumi , Ivan Zyulkov , David Kurt de Roest , Michael Eugene Givens
IPC分类号： G03F7/16
摘要： A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

10. 发明申请

US20200064737A1 SUBSTRATE PROCESSING APPARATUS AND METHOD 审中-公开
公开(公告)号：US20200064737A1
公开(公告)日：2020-02-27
申请号：US16546543
申请日：2019-08-21
申请人： ASM IP Holding B.V.
发明人： David Kurt de Roest
IPC分类号： G03F7/16 , H01L21/027 , H01L21/67
摘要： A substrate processing apparatus comprising a wet processing station with a resist coating device for coating a resist on a substrate and/or a development processing device for developing the resist on the substrate is disclosed. The apparatus may have an additional processing station and a substrate handler for moving the substrate to the wet, and/or additional processing station and moving the substrate in a direction in and/or out of the substrate processing apparatus. The additional processing station comprises an infiltration device.

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