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1. 发明授权

US11735422B2 Method of forming a photoresist underlayer and structure including same 有权
公开(公告)号：US11735422B2
公开(公告)日：2023-08-22
申请号：US17065925
申请日：2020-10-08
申请人： ASM IP Holding B.V.
发明人： Ivan Zyulkov , David Kurt de Roest , Yoann Tomczak , Michael Eugene Givens , Perttu Sippola , Tatiana Ivanova , Zecheng Liu , Bokheon Kim , Daniele Piumi
IPC分类号： H01L21/033 , H01L21/027 , H01L21/02 , H01L21/3105
CPC分类号： H01L21/0337 , H01L21/022 , H01L21/0228 , H01L21/0273 , H01L21/02172 , H01L21/02186 , H01L21/02205 , H01L21/02274 , H01L21/0332 , H01L21/3105
摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

2. 发明授权

US11644758B2 Structures and methods for use in photolithography 有权
公开(公告)号：US11644758B2
公开(公告)日：2023-05-09
申请号：US17375235
申请日：2021-07-14
申请人： ASM IP Holding B.V.
发明人： Daniele Piumi , David Kurt de Roest
IPC分类号： G03F7/20 , H01L23/00
CPC分类号： G03F7/70783 , G03F7/70033 , H01L23/562
摘要： Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

3. 发明申请

US20200013629A1 SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
公开(公告)号：US20200013629A1
公开(公告)日：2020-01-09
申请号：US16468258
申请日：2017-12-08
申请人： ASM IP Holding B.V.
发明人： David Kurt de Roest , Werner Knaepen , Krzysztof Kachel
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/324
摘要： An apparatus and a method for forming a structure within a semiconductor processing apparatus are disclosed. The apparatus includes a first reaction chamber, the first reaction chamber configured to hold at least one substrate having a first layer. The apparatus also includes a precursor delivery system configured to perform an infiltration by sequentially pulsing a first precursor and a second precursor on the substrate. The apparatus may also include a first removal system configured for removing at least a portion of the first layer disposed on the substrate while leaving an infiltrated material, wherein the infiltration and the removing at least a portion of the first layer take place within the same semiconductor processing apparatus. A method of forming a structure within a semiconductor processing apparatus is also disclosed, the method including providing a substrate for processing in a reaction chamber, the substrate having a first layer disposed on the substrate. The method may also include performing a first layer infiltration by sequentially pulsing a first precursor and a second precursor on the substrate, wherein an infiltrated material forms in the first layer from the reaction of the first precursor and the second precursor. The method may also include removing at least a portion of the first layer disposed on the substrate after performing the infiltration, wherein the infiltration and the removing at least a portion of the first layer take place with the same semiconductor processing apparatus.

4. 发明申请

US20190163056A1 METHOD OF FORMING AN ENHANCED UNEXPOSED PHOTORESIST LAYER 审中-公开
公开(公告)号：US20190163056A1
公开(公告)日：2019-05-30
申请号：US16167164
申请日：2018-10-22
申请人： ASM IP Holding B.V.
发明人： Jan Willem Maes , Krzysztof Kamil Kachel , David Kurt de Roest
IPC分类号： G03F7/004 , G03F7/20 , G03F7/16
摘要： The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

5. 发明授权

US11664219B2 Selective deposition of SiOC thin films 有权
公开(公告)号：US11664219B2
公开(公告)日：2023-05-30
申请号：US17463813
申请日：2021-09-01
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Maes , David Kurt de Roest , Oreste Madia
IPC分类号： H01L21/02 , H01L21/311
CPC分类号： H01L21/0228 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/31116
摘要： Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

6. 发明申请

US20230059464A1 METHOD OF FORMING PATTERNED STRUCTURES 有权
公开(公告)号：US20230059464A1
公开(公告)日：2023-02-23
申请号：US17818062
申请日：2022-08-08
申请人： ASM IP Holding, B.V.
发明人： Yoann Tomczak , Ivan Zyulkov , David Kurt de Roest , Michael Eugence Givens , Daniele Piumi , Charles Dezelah
IPC分类号： H01L21/768 , H01L21/027 , G03F7/004 , G03F7/20
摘要： Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.

7. 发明申请

US20210398797A1 SELECTIVE DEPOSITION OF SIOC THIN FILMS 有权
公开(公告)号：US20210398797A1
公开(公告)日：2021-12-23
申请号：US17463813
申请日：2021-09-01
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Maes , David Kurt de Roest , Oreste Madia
IPC分类号： H01L21/02 , H01L21/311
摘要： Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

8. 发明申请

US20210296130A1 METHOD FOR SELECTIVELY DEPOSITING A METALLIC FILM ON A SUBSTRATE 有权
公开(公告)号：US20210296130A1
公开(公告)日：2021-09-23
申请号：US17340178
申请日：2021-06-07
申请人： ASM IP Holding B.V.
发明人： Delphine Longrie , David Kurt de Roest
IPC分类号： H01L21/285 , H01L21/3065 , H01L21/28 , H01L21/3205 , H01L21/768 , C23C16/06 , C23C16/455 , H01L21/48 , C23C16/04 , H01L21/321 , C23C16/02 , C23C16/08
摘要： A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

9. 发明授权

US11022879B2 Method of forming an enhanced unexposed photoresist layer 有权
公开(公告)号：US11022879B2
公开(公告)日：2021-06-01
申请号：US16167164
申请日：2018-10-22
申请人： ASM IP Holding B.V.
发明人： Jan Willem Maes , Krzysztof Kamil Kachel , David Kurt de Roest
IPC分类号： G03F7/004 , G03F7/20 , G03F7/16
摘要： The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

10. 发明申请

US20210071298A1 SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS AND A METHOD OF FORMING A PATTERNED STRUCTURE 有权
公开(公告)号：US20210071298A1
公开(公告)日：2021-03-11
申请号：US16952363
申请日：2020-11-19
申请人： ASM IP Holding B.V.
发明人： Jan Willem Maes , Werner Knaepen , Krzysztof Kamil Kachel , David Kurt de Roest , Bert Jongbloed , Dieter Pierreux
IPC分类号： C23C16/455 , C23C16/44 , H01L21/033 , C23C16/448 , C23C16/04 , C23C16/52 , C23C16/56
摘要： A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

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