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1. 发明申请

US20170184631A1 PROBE DEVICE FOR SCANNING PROBE MICROSCOPES AND METHOD OF MANUFACTURE THEREOF 审中-公开
公开(公告)号：US20170184631A1
公开(公告)日：2017-06-29
申请号：US15378879
申请日：2016-12-14
申请人： Applied Nanostructures, Inc.
发明人： Ami Chand , Jeremy Goeckeritz
IPC分类号： G01Q70/14 , H01L21/311
CPC分类号： G01Q70/14 , G01Q70/16 , H01L21/31111 , H01L21/31116
摘要： Specific probe device configurations and processes for producing those probe configurations. A Probe device may include a silicon nitride cantilever of controlled thickness, holding a silicon probe tip of controllable sharpness. The probe tip may also be coated with a silicon nitride layer also of controllable thickness. An optional silicon reflective pad may also be formed as a base for the tip. The probe device is produced by forming a tip, optionally with base pad, on a silicon wafer, depositing a silicon nitride film on the wafer, etching the silicon nitride film to form a cantilever holding the tip/pad, selectively etching the silicon nitride film for separately controllable thickness both for the cantilever and the coated tip, and then etching away the backside silicon to leave a free silicon nitride cantilever holding a silicon nitride coated tip.

2. 发明申请

US20140338075A1 Vertical Embedded Sensor and Process of Manufacturing Thereof 有权
标题翻译：垂直嵌入式传感器及其制造工艺
公开(公告)号：US20140338075A1
公开(公告)日：2014-11-13
申请号：US14271344
申请日：2014-05-06
申请人： APPLIED NANOSTRUCTURES, INC.
发明人： Jeremy J. Goeckeritz , Gary D. Aden , Ami Chand , Josiah F. Willard
IPC分类号： G01Q70/14 , G01Q70/16
CPC分类号： G01Q70/14 , B82Y35/00 , G01Q60/58 , G01Q70/16
摘要： A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.
摘要翻译：具有限定在顶端顶点处的纳米传感器元件的扫描探针组件及其使用微机电系统（MEMS）处理技术的制造方法。组件包括探针主体，向外延伸的悬臂和悬臂末端的中空尖端。第一导电材料设置在中空尖端上，随后是介电层从而嵌入导电层。通过尖端，第一导体和电介质材料研磨纳米孔。金属传感器元件通过电化学沉积沉积在通孔中。第二导体沉积在下层上。第一和第二导体与尖端中的传感器元件形成电连接。尖端金属与其他层结合可形成热电偶，热敏电阻，肖特基二极管，超微电极或霍尔效应传感器，并用作生长诸如纳米管的尖峰的前体。

3. 发明授权

US09389244B2 Vertical embedded sensor and process of manufacturing thereof 有权
标题翻译：垂直嵌入式传感器及其制造工艺
公开(公告)号：US09389244B2
公开(公告)日：2016-07-12
申请号：US14271344
申请日：2014-05-06
申请人： Applied Nanostructures, Inc.
发明人： Jeremy J. Goeckeritz , Gary D. Aden , Ami Chand , Josiah F. Willard
IPC分类号： G01Q70/14 , G01Q60/58 , G01Q70/16 , B82Y35/00
CPC分类号： G01Q70/14 , B82Y35/00 , G01Q60/58 , G01Q70/16
摘要： A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.
摘要翻译：具有限定在顶端顶点处的纳米传感器元件的扫描探针组件及其使用微机电系统（MEMS）处理技术的制造方法。组件包括探针主体，向外延伸的悬臂和悬臂末端的中空尖端。第一导电材料设置在中空尖端上，随后是介电层从而嵌入导电层。通过尖端，第一导体和电介质材料研磨纳米孔。金属传感器元件通过电化学沉积沉积在通孔中。第二导体沉积在下层上。第一和第二导体与尖端中的传感器元件形成电连接。尖端金属与其他层结合可形成热电偶，热敏电阻，肖特基二极管，超微电极或霍尔效应传感器，并用作生长诸如纳米管的尖峰的前体。

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