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1. 发明授权

US10580657B2 Device fabrication via pulsed plasma 有权
公开(公告)号：US10580657B2
公开(公告)日：2020-03-03
申请号：US16506520
申请日：2019-07-09
申请人： Applied Materials, Inc.
发明人： Chang Wook Doh , Zhibin Wang , Byungkook Kong , Sang Wook Kim , Sang-Jun Choi
IPC分类号： H01L21/3065 , H01J37/32
摘要： Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

2. 发明授权

US10265742B2 Method for in-situ chamber clean using carbon monoxide (CO) gas utlized in an etch processing chamber 有权
公开(公告)号：US10265742B2
公开(公告)日：2019-04-23
申请号：US14522864
申请日：2014-10-24
申请人： Applied Materials, Inc.
发明人： Kee Young Cho , Sang Wook Kim , Joo Won Han , Han Soo Cho
IPC分类号： B08B7/00 , C11D11/00 , C23C16/44 , H01J37/32
摘要： Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.

3. 发明授权

US11031233B2 High lateral to vertical ratio etch process for device manufacturing 有权
公开(公告)号：US11031233B2
公开(公告)日：2021-06-08
申请号：US16576650
申请日：2019-09-19
申请人： Applied Materials, Inc.
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01J37/32 , H01L21/02 , H01L21/311 , H01L21/027 , H01L21/3213
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

4. 发明授权

US10460921B2 High lateral to vertical ratio etch process for device manufacturing 有权
公开(公告)号：US10460921B2
公开(公告)日：2019-10-29
申请号：US13960760
申请日：2013-08-06
申请人： Applied Materials, Inc.
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01L21/02 , H01L21/027 , H01L21/311 , H01L21/3213
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

5. 发明申请

US20200013610A1 HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING 审中-公开
公开(公告)号：US20200013610A1
公开(公告)日：2020-01-09
申请号：US16576650
申请日：2019-09-19
申请人： Applied Materials, Inc.
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01L21/02
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

6. 发明授权

US09236255B2 Methods for forming three dimensional NAND structures atop a substrate 有权
标题翻译：在衬底上形成三维NAND结构的方法
公开(公告)号：US09236255B2
公开(公告)日：2016-01-12
申请号：US14313246
申请日：2014-06-24
申请人： APPLIED MATERIALS, INC.
发明人： Sang Wook Kim , Han Soo Cho , Joo Won Han , Kee Young Cho , Kuan-Ting Liu , Anisul Khan
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L27/115
CPC分类号： H01L21/0273 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L27/11548 , H01L27/11575
摘要： In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers; providing a process gas comprising sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and oxygen (O2) to the process chamber; providing an RF power of about 4 kW to about 6 kW to an RF coil to ignite the process gas to form a plasma; and etching through a desired number of the alternating layers to form a feature of a NAND structure.
摘要翻译：在一些实施例中，在衬底顶部形成三维NAND结构的方法可以包括向处理室提供具有交替的氮化物层和氧化物层或交替的多晶硅层和形成在衬底顶部的氧化物层的衬底，以及形成在顶部的光致抗蚀剂层交替层; 蚀刻光致抗蚀剂层以暴露交替的氮化物层和氧化物层或交替的多晶硅层和氧化物层的至少一部分; 提供包括六氟化硫（SF6），四氟化碳（CF4）和氧气（O2））的处理气体到处理室; 向RF线圈提供约4kW至约6kW的RF功率以点燃工艺气体以形成等离子体; 并蚀刻通过所需数量的交替层以形成NAND结构的特征。

7. 发明授权

US10727075B2 Uniform EUV photoresist patterning utilizing pulsed plasma process 有权
公开(公告)号：US10727075B2
公开(公告)日：2020-07-28
申请号：US15853243
申请日：2017-12-22
申请人： Applied Materials, Inc.
发明人： Sang Wook Kim , Zhibin Wang , Kyoungjin Lee , Byungkook Kong
IPC分类号： H01L21/308 , H01L21/027 , H01L21/311 , H01L21/02 , H01L21/033
摘要： Embodiments of the present disclosure generally provide a method and apparatus for forming features in a material layer utilizing EUV technologies. In one embodiment, a method of patterning a substrate includes disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer, forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings and etching the mask layer through the openings with the modified width.

8. 发明授权

US10347500B1 Device fabrication via pulsed plasma 有权
公开(公告)号：US10347500B1
公开(公告)日：2019-07-09
申请号：US15996982
申请日：2018-06-04
申请人： Applied Materials, Inc.
发明人： Chang Wook Doh , Zhibin Wang , Byungkook Kong , Sang Wook Kim , Sang-Jun Choi
IPC分类号： H01L21/3065 , H01J37/32
摘要： Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

9. 发明授权

US08937021B2 Methods for forming three dimensional NAND structures atop a substrate 有权
标题翻译：在衬底上形成三维NAND结构的方法
公开(公告)号：US08937021B2
公开(公告)日：2015-01-20
申请号：US14306535
申请日：2014-06-17
申请人： Applied Materials, Inc.
发明人： Han Soo Cho , Sang Wook Kim , Joo Won Han , Kee Young Cho , Anisul H. Khan
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/31116
摘要： In some embodiments, methods for forming a three dimensional NAND structure include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon consisting layers and oxide layers formed atop the substrate and a photoresist layer formed atop the alternating layers; etching the photoresist layer to expose at least a portion of the alternating layers; providing a process gas comprising sulfur hexafluoride and oxygen to the process chamber; providing RF power of about 4 kW to about 6 kW to a first inductive RF coil and a second inductive RF coil disposed proximate the process chamber to ignite the process gas to form a plasma, wherein a current flowing through the first inductive RF coil is out of phase with RF current flowing through the second inductive RF coil; and etching through a desired number of the alternating layers to form a feature.
摘要翻译：在一些实施例中，用于形成三维NAND结构的方法包括向处理室提供具有交替的氮化物层和氧化物层或交替的多晶硅组成层和形成在衬底顶部的氧化物层的衬底和在交替层上形成的光致抗蚀剂层的衬底; 蚀刻光致抗蚀剂层以暴露交替层的至少一部分; 向处理室提供包含六氟化硫和氧的工艺气体; 向第一感应RF线圈提供约4kW至约6kW的RF功率，并且设置在处理室附近以点燃处理气体以形成等离子体的第二感应RF线圈，其中流过第一感应RF线圈的电流为的相位，RF电流流过第二感应RF线圈; 并且通过所需数量的交替层蚀刻以形成特征。

10. 发明申请

US20130319614A1 HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING 审中-公开
标题翻译：用于设备制造的高级垂直比例蚀刻工艺
公开(公告)号：US20130319614A1
公开(公告)日：2013-12-05
申请号：US13960760
申请日：2013-08-06
申请人： Applied Materials, Inc.
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01L21/02
CPC分类号： H01L21/02 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32139
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
摘要翻译：使用沉积在层堆叠上的光致抗蚀剂图案作为第一掩模蚀刻在衬底上的层叠。使用等离子体原位固化光致抗蚀剂图案。光致抗蚀剂图案的至少一部分可以通过固化来改性。在一个实施例中，在等离子体的光刻胶图案上形成硅副产物。在另一个实施例中，来自等离子体的碳被嵌入到光致抗蚀剂图案中。在另一个实施例中，等离子体产生紫外光以固化光致抗蚀剂图案。固化的光致抗蚀剂图案变薄。使用薄的光致抗蚀剂图案作为第二掩模蚀刻层堆叠。

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