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1. 外观设计

USD798248S1 Target profile for a physical vapor deposition chamber target 有权
公开(公告)号：USD798248S1
公开(公告)日：2017-09-26
申请号：US29530683
申请日：2015-06-18
申请人： APPLIED MATERIALS, INC.
设计人： Ryan Hanson , Zhenbin Ge , Vivek Gupta

2. 发明授权

US09644262B2 Self-centering process shield 有权
公开(公告)号：US09644262B2
公开(公告)日：2017-05-09
申请号：US14198569
申请日：2014-03-05
申请人： Applied Materials, Inc.
发明人： Ryan Hanson , Goichi Yoshidome , Nelson Yee
IPC分类号： C23C14/34 , C23C14/56 , H01J37/32 , H01J37/34
CPC分类号： C23C14/564 , H01J37/32623 , H01J37/32651 , H01J37/34 , H01J37/3447 , Y10T428/13 , Y10T428/131
摘要： A process shield may include an elongated annular body having an outer surface and an inner surface; a lip extending radially outward from the outer surface of the body proximate a first end of the body such that a first portion of the body extends beyond the lip toward the first end; a plurality of openings in the lip; and a pin disposed in each of the plurality of openings to align the target assembly atop the process shield when the lid is placed atop the process shield, wherein the pin comprises an elongated body having a first surface with a beveled peripheral edge, wherein the first surface has a first diameter, a second surface opposing the first surface, wherein the second surface has a second diameter, and a sidewall, between the first surface and the second surface, wherein the sidewall has a concave portion having a third diameter.

3. 发明授权

US09984911B2 Electrostatic chuck design for high temperature RF applications 有权
公开(公告)号：US09984911B2
公开(公告)日：2018-05-29
申请号：US14962446
申请日：2015-12-08
申请人： APPLIED MATERIALS, INC.
发明人： Ryan Hanson , Manjunatha Koppa , Vijay D. Parkhe , John C. Forster , Keith A. Miller
IPC分类号： H02N13/00 , H01L21/683
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic chuck includes a puck having a support surface to support a substrate when disposed thereon and an opposing second surface, wherein one or more chucking electrodes are embedded in the puck, a body having a support surface coupled to the second surface of the puck to support the puck, a DC voltage sensing circuit disposed on support surface of the puck, and an inductor disposed in the body and proximate the support surface of the body, wherein the inductor is electrically coupled to DC voltage sensing circuit, and wherein the inductor is configured to filter high frequency current flow in order to accurately measure DC potential on the substrate.

4. 发明授权

US10266940B2 Auto capacitance tuner current compensation to control one or more film properties through target life 有权
公开(公告)号：US10266940B2
公开(公告)日：2019-04-23
申请号：US15050409
申请日：2016-02-22
申请人： APPLIED MATERIALS, INC.
发明人： Zhenbin Ge , Vivek Gupta , Adolph Miller Allen , Ryan Hanson
IPC分类号： C23C14/34 , C23C14/54 , H01J37/32 , H03J7/04 , H03L7/06
摘要： In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.

5. 发明授权

US09404176B2 Substrate support with radio frequency (RF) return path 有权
标题翻译：基板支持射频（RF）返回路径
公开(公告)号：US09404176B2
公开(公告)日：2016-08-02
申请号：US13899808
申请日：2013-05-22
申请人： APPLIED MATERIALS, INC.
发明人： Vijay D. Parkhe , Ryan Hanson
IPC分类号： C23C14/50 , H01J37/34 , H01J37/32
CPC分类号： C23C14/50 , H01J37/32577 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01J37/34
摘要： Embodiments of substrate supports having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support may include a dielectric support body having a support surface to support a substrate thereon and an opposing second surface; a chucking electrode disposed within the support body proximate the support surface; and an RF return path electrode disposed on the second surface of the dielectric support body. In some embodiments, a substrate processing system may include a process chamber having an inner volume; a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber; and a substrate support disposed below the shield, wherein the substrate support is as described above.
摘要翻译：本文提供了具有射频（RF）返回路径的基板支架的实施例。在一些实施例中，衬底支撑件可以包括电介质支撑体，其具有支撑表面以支撑其上的衬底和相对的第二表面; 夹持电极，设置在所述支撑体内靠近所述支撑表面; 以及设置在电介质支撑体的第二表面上的RF返回路径电极。在一些实施例中，衬底处理系统可以包括具有内部容积的处理室; 将内部体积分离成处理体积和非处理体积并延伸到处理室的天花板的屏蔽件; 以及设置在所述屏蔽件下方的衬底支撑件，其中所述衬底支撑件如上所述。

6. 发明授权

US10546733B2 One-piece process kit shield 有权
公开(公告)号：US10546733B2
公开(公告)日：2020-01-28
申请号：US14960890
申请日：2015-12-07
申请人： APPLIED MATERIALS, INC.
发明人： Kirankumar Savandaiah , Ryan Hanson , Ruxiao An
IPC分类号： C23C14/35 , H01J37/34 , H01J37/32
摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield includes a cylindrical body having an upper portion and a lower portion; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inward from the lower portion.

7. 外观设计

USD825505S1 Target profile for a physical vapor deposition chamber target 有权
公开(公告)号：USD825505S1
公开(公告)日：2018-08-14
申请号：US29618685
申请日：2017-09-22
申请人： APPLIED MATERIALS, INC.
设计人： Ryan Hanson , Zhenbin Ge , Vivek Gupta

8. 发明授权

US09812303B2 Configurable variable position closed track magnetron 有权
公开(公告)号：US09812303B2
公开(公告)日：2017-11-07
申请号：US14182740
申请日：2014-02-18
申请人： APPLIED MATERIALS, INC.
发明人： Alan Ritchie , Ryan Hanson , Xianwei Zhao
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3455 , H01J37/3405 , H01J37/3452 , H01J37/3461
摘要： Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first base plate; a second base plate movable with respect to the first base plate between a first position and a second position; an outer magnetic pole in the shape of a loop and comprising an outer magnetic pole section coupled to the first base plate and an outer magnetic pole section coupled to the second base plate; and an inner magnetic pole disposed within the outer magnetic pole, wherein the outer and inner magnetic poles define a closed loop magnetic field, and wherein the closed loop magnetic field is maintained when the second base plate is disposed in both the first position and a second position.

9. 发明授权

US09534286B2 PVD target for self-centering process shield 有权
标题翻译： PVD定位自动对中过程屏蔽
公开(公告)号：US09534286B2
公开(公告)日：2017-01-03
申请号：US13837742
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： Goichi Yoshidome , Ryan Hanson , Donny Young , Muhammad Rasheed , Keith A. Miller
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/3414 , H01J37/3435 , Y10T428/218 , Y10T428/219
摘要： In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.
摘要翻译：在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面，第一边目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 沿着所述背板的第一侧面延伸到所述背板的所述第二侧面的沿着所述背板的外周设置的多个槽，其中所述多个槽被配置成相对于所述工艺防护罩对准所述目标组件。

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