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1. 发明申请

US20150280053A1 OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20150280053A1
公开(公告)日：2015-10-01
申请号：US14438188
申请日：2013-10-23
申请人： ALEDIA , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Philippe Gilet , Xavier Hugon , David Vaufrey , Hubert Bono , Bérangère Hyot
IPC分类号： H01L33/00 , H01L31/18
CPC分类号： H01L33/007 , B82Y20/00 , B82Y40/00 , H01L31/1804 , H01L31/1852 , H01L33/0054 , H01L33/08 , H01L33/18 , H01L33/24
摘要： A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.
摘要翻译：一种制造光电器件的方法，包括半导体衬底，衬底表面上的焊盘; 半导体元件，每个元件与焊盘接触; 以及从表面延伸到基板中的电介质区域，对于每对焊盘，将该对中的一个焊盘中的一个焊盘连接到该对焊盘中的另一焊盘，该方法依次包括形成焊盘并形成区域其中所述区域是通过对所述衬底进行氮化而形成的，所述方法包括以下步骤：在所述衬底上沉积一层; 在层上形成部分; 蚀刻未被部分覆盖的层的部分以形成焊盘; 去除部分; 并且对所述衬垫和所述衬底的未被衬垫覆盖的部分进行氮化，其中所述氮化步骤依次包括：在第一温度下对所述焊盘进行氮化的第一步骤; 以及在不同于所述第一温度的第二温度下氮化未被所述焊盘覆盖的所述衬底部分的第二步骤。

2. 发明授权

US09537044B2 Optoelectric device and method for manufacturing the same 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US09537044B2
公开(公告)日：2017-01-03
申请号：US14438188
申请日：2013-10-23
申请人： ALEDIA , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Philippe Gilet , Xavier Hugon , David Vaufrey , Hubert Bono , Bérangère Hyot
IPC分类号： H01L33/00 , H01L31/18 , B82Y40/00 , H01L33/18 , H01L33/08 , H01L33/24 , B82Y20/00
CPC分类号： H01L33/007 , B82Y20/00 , B82Y40/00 , H01L31/1804 , H01L31/1852 , H01L33/0054 , H01L33/08 , H01L33/18 , H01L33/24
摘要： A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.
摘要翻译：一种制造光电器件的方法，包括半导体衬底，衬底表面上的焊盘; 半导体元件，每个元件与焊盘接触; 以及从表面延伸到基板中的电介质区域，对于每对焊盘，将该对中的一个焊盘中的一个焊盘连接到该对焊盘中的另一焊盘，该方法依次包括形成焊盘并形成区域其中所述区域是通过对所述衬底进行氮化而形成的，所述方法包括以下步骤：在所述衬底上沉积一层; 在层上形成部分; 蚀刻未被部分覆盖的层的部分以形成焊盘; 去除部分; 并且对所述衬垫和所述衬底的未被衬垫覆盖的部分进行氮化，其中所述氮化步骤依次包括：在第一温度下对所述焊盘进行氮化的第一步骤; 以及在不同于所述第一温度的第二温度下氮化未被所述焊盘覆盖的所述衬底部分的第二步骤。

3. 发明申请

US20160218240A1 METHOD FOR PRODUCING OPTOELECTRONIC DEVICES COMPRISING LIGHT-EMITTING DIODES 审中-公开
标题翻译：用于生产包含发光二极管的光电装置的方法
公开(公告)号：US20160218240A1
公开(公告)日：2016-07-28
申请号：US14916985
申请日：2014-09-30
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Christophe Bouvier , Emilie Pougeoise , Xavier Hugon , Carolo Cagli , Tiphaine Dupont , Philippe Gibert , Nacer Aitmani
IPC分类号： H01L33/00 , H01L33/50 , H01L33/54 , H01L25/075 , H01L33/62
CPC分类号： H01L33/0095 , H01L25/0753 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/382 , H01L33/385 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.
摘要翻译：一种制造光电器件的方法，包括以下连续步骤：提供具有第一面的衬底; 在第一面上形成包括线状，锥形或截头圆锥半导体元件的发光二极管组; 用封装发光二极管的层覆盖所有第一面; 形成与所述基板绝缘并从所述第二面到所述第一面延伸穿过所述基板的导电元件; 减小基板的厚度; 并切割所得到的结构，以分离每组发光二极管。

4. 发明授权

US09379158B2 Optical detector unit 有权
标题翻译：光检测器单元
公开(公告)号：US09379158B2
公开(公告)日：2016-06-28
申请号：US14361152
申请日：2012-11-29
申请人： THALES , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Benoit Giffard , Xavier Hugon , Norbert Moussy , Jean-Luc Reverchon , Philippe Bois
IPC分类号： G01J5/00 , H01L27/146 , H04N5/32 , H04N5/378
CPC分类号： H01L27/14649 , H01L27/14634 , H01L27/14636 , H01L27/14641 , H01L27/14647 , H01L27/1465 , H01L27/14652 , H01L27/14683 , H01L27/1469 , H04N5/32 , H04N5/378
摘要： This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector.The first and second read out circuit are integrated together, so as to form a common read out circuit.
摘要翻译：该光学检测器单元是在给定波长范围内工作的混合单元，包括重叠的第一光学检测器，包括形成在半导体结构中的检测元件，每个检测元件用于将入射光子的光束转换为电信号; 以及第一读出电路，用于从每个检测元件读取电信号。光学检测器单元还具有成像系统，其具有用于增加光学检测器单元的工作波长范围的第二光学检测器和用于从第二光学检测器的检测元件读取电信号的第二读出电路。第一和第二读出电路集成在一起，以形成公共读出电路。

5. 发明申请

US20140346356A1 OPTICAL DETECTOR UNIT 有权
标题翻译：光学检测器单元
公开(公告)号：US20140346356A1
公开(公告)日：2014-11-27
申请号：US14361152
申请日：2012-11-29
申请人： THALES , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Benoit Giffard , Xavier Hugon , Norbert Moussy , Jean-Luc Reverchon , Philippe Bois
IPC分类号： H01L27/146 , H04N5/32 , H04N5/378
CPC分类号： H01L27/14649 , H01L27/14634 , H01L27/14636 , H01L27/14641 , H01L27/14647 , H01L27/1465 , H01L27/14652 , H01L27/14683 , H01L27/1469 , H04N5/32 , H04N5/378
摘要： This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector.The first and second read out circuit are integrated together, so as to form a common read out circuit.
摘要翻译：该光学检测器单元是在给定波长范围内工作的混合单元，包括重叠的第一光学检测器，包括形成在半导体结构中的检测元件，每个检测元件用于将入射光子的光束转换为电信号; 以及第一读出电路，用于从每个检测元件读取电信号。光学检测器单元还具有成像系统，其具有用于增加光学检测器单元的工作波长范围的第二光学检测器和用于从第二光学检测器的检测元件读取电信号的第二读出电路。第一和第二读出电路集成在一起，以形成公共读出电路。

6. 发明授权

US10115864B2 Optoelectronic device with light-emitting diodes and an improved radiation pattern 有权
公开(公告)号：US10115864B2
公开(公告)日：2018-10-30
申请号：US15302478
申请日：2015-03-27
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Aledia
发明人： Adrien Gasse , Bernard Andre , Hubert Bono , Xavier Hugon
IPC分类号： H01L33/00 , H01L33/50 , H01L33/32 , H01L27/15 , H01L33/18 , H01L33/20 , H01L33/24 , H01L33/08
摘要： An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.

7. 发明授权

US10084012B2 Optoelectronic device with light-emitting diodes 有权
公开(公告)号：US10084012B2
公开(公告)日：2018-09-25
申请号：US15539373
申请日：2015-12-24
申请人： Aledia
发明人： Xavier Hugon
IPC分类号： H01L31/00 , H01L27/15 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/40 , H01L33/50 , H01L33/56 , H01L33/58 , H01L33/62 , H01L33/00
CPC分类号： H01L27/156 , G02F1/133603 , H01L21/762 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/502 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2933/0016 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
摘要： An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.

8. 发明申请

US20170373118A1 OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES 审中-公开
公开(公告)号：US20170373118A1
公开(公告)日：2017-12-28
申请号：US15539373
申请日：2015-12-24
申请人： Aledia
发明人： Xavier Hugon
IPC分类号： H01L27/15 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/62 , H01L33/58 , H01L33/56 , H01L33/50 , H01L33/42 , H01L33/00 , H01L33/38 , H01L33/32 , H01L33/28 , H01L33/24 , H01L33/14 , H01L33/40
CPC分类号： H01L27/156 , G02F1/133603 , H01L21/762 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/502 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2933/0016 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
摘要： An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.

9. 发明申请

US20170033264A1 OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES AND AN IMPROVED RADIATION PATTERN 审中-公开
标题翻译：具有发光二极管的光电器件和改进的辐射图案
公开(公告)号：US20170033264A1
公开(公告)日：2017-02-02
申请号：US15302478
申请日：2015-03-27
申请人： Commissariat à I'Énergie Atomique et aux Énergies Alternatives , Aledia
发明人： Adrien Gasse , Bernard Andre , Hubert Bono , Xavier Hugon
IPC分类号： H01L33/32 , H01L33/00 , H01L27/15 , H01L33/24
CPC分类号： H01L33/32 , H01L27/15 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014
摘要： An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.
摘要翻译：一种设置有支撑体的光电子器件，其包括具有至少一个凹部或凸部的面，所述部分的矢状的振幅高于该部分的弦的1/20，以及布置在该部分上的发光二极管，每个发光二极管包括与该部分接触的圆柱形，圆锥形或截头圆锥形半导体元件，每个半导体元件与该部分之间的接触表面的矢状的幅度小于或等于0.5微米。

10. 发明申请

US20220059743A1 OPTOELECTRONIC DEVICE 有权
公开(公告)号：US20220059743A1
公开(公告)日：2022-02-24
申请号：US17414874
申请日：2019-12-19
申请人： Aledia
发明人： Frédéric Mayer , Frédéric Mercier , Ivan-Christophe Robin , Xavier Hugon
IPC分类号： H01L33/62 , H01L25/075 , H01L33/00
摘要： An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

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