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1. 发明申请

US20160122238A1 SOLAR CONTROL GLAZING 审中-公开
标题翻译：太阳能控制玻璃
公开(公告)号：US20160122238A1
公开(公告)日：2016-05-05
申请号：US14894420
申请日：2014-05-28
申请人： AGC GLASS EUROPE , AGC GLASS COMPANY NORTH AMERICA
发明人： Philippe ROQUINY , Oliver KAPPERTZ , Joerg MOENNEKES , Yuping LIN , Stijn MAHIEU , Anne-Christine BAUDOUIN
IPC分类号： C03C17/36 , C23C14/35
CPC分类号： C03C17/3681 , C03C17/3618 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/366 , C03C2218/153 , C03C2218/156 , C23C14/35
摘要： The invention relates to heat treatable solar control glazing showing low-emissivity properties, and possibly also anti-solar properties and methods to manufacture such glazing. They comprise a transparent substrate coated with a stack of thin layers comprising n functional layer(s) reflecting infrared radiation and n+1 dielectric layers, with n≧1, each functional layer being surrounded by dielectric layers. At least one dielectric layer above a functional layer comprises a layer consisting essentially of silicon oxide, preferably deposited by PECVD, and the stack comprises a barrier layer based on zinc oxide above and in direct contact with any functional layer which has a silicon oxide layer in the dielectric layer directly above it.
摘要翻译：本发明涉及显示低发射性能的可热处理的太阳能控制玻璃，以及可能还有抗太阳能性质和制造这种玻璃的方法。它们包括涂覆有一层薄层的透明基板，其中n个反射红外辐射的n个功能层和n + 1个电介质层，n≥1，每个功能层被电介质层包围。功能层上方的至少一个电介质层包括基本上由氧化硅组成的层，优选通过PECVD沉积，并且该叠层包括基于氧化锌的阻挡层，并且与任何功能层直接接触，所述功能层具有氧化硅层电介质层正上方。

2. 发明申请

US20190233328A1 SOLAR CONTROL GLAZING 审中-公开
公开(公告)号：US20190233328A1
公开(公告)日：2019-08-01
申请号：US16381623
申请日：2019-04-11
申请人： AGC GLASS EUROPE , AGC FLAT GLASS NORTH AMERICA, INC.
发明人： Philippe ROQUINY , Oliver KAPPERTZ , Joerg MOENNEKES , Yuping LIN , Stijn MAHIEU , Anne-Christine BAUDOUIN
IPC分类号： C03C17/36 , C23C14/35
CPC分类号： C03C17/3681 , C03C17/3618 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/366 , C03C2218/153 , C03C2218/156 , C23C14/35
摘要： A heat treatable solar control glazing showing low-emissivity properties, and possibly also anti-solar properties, and methods to manufacture such a glazing. The glazing comprises a transparent substrate coated with a stack of thin layers comprising n functional layer(s) reflecting infrared radiation and n+1 dielectric layers, with n≥1, each functional layer being surrounded by dielectric layers. At least one dielectric layer above a functional layer comprises a layer consisting essentially of silicon oxide deposited by PECVD, and the stack comprises a barrier layer based on zinc oxide above and in direct contact with any functional layer which has a silicon oxide layer in the dielectric layer directly above it.

3. 发明申请

US20160122236A1 LOW-EMISSIVITY AND ANTI-SOLAR GLAZING 有权
标题翻译：低功率和抗太阳能玻璃
公开(公告)号：US20160122236A1
公开(公告)日：2016-05-05
申请号：US14894418
申请日：2014-05-28
申请人： AGC GLASS EUROPE
发明人： Stijn MAHIEU , Anne-Christine BAUDOUIN , Marc HAUPTMANN , Jean-Michel DEPAUW , Michael PURWINS , Eric MATHIEU , Hansjoerg WEIS
IPC分类号： C03C17/36
CPC分类号： C03C17/366 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/3681
摘要： The invention relates to low-emissivity and anti-solar glazing systems that change only very little in properties when they are subjected to a heat treatment. They comprise a stack of thin layers comprising an alternating arrangement of n infrared radiation reflecting functional layers and n+ 1 dielectric coatings, characterised in that: (i) the first dielectric coating comprises a layer made from an oxide in contact with the substrate, (ii) the portion of the coating stack between two functional layers comprises, in order: a barrier layer, a zinc oxide-based layer, a layer of zinc-tin mixed oxide, a nucleation layer, and (iii) the last dielectric coating comprises a layer made from an oxide other than silicon oxide with a thickness greater than 3 nm overlaid with a layer made from a silicon nitride or a silicon oxide with a thickness greater than 10 nm superposed thereon.
摘要翻译：本发明涉及低辐射率和抗太阳能玻璃窗系统，当它们进行热处理时其性能变化很小。它们包括一叠薄层，其包括反射功能层和n + 1电介质涂层的n个红外辐射的交替布置，其特征在于：（i）第一介电涂层包括由与基底接触的氧化物制成的层，（ii ）涂层叠层在两个功能层之间的部分按顺序包括：阻挡层，氧化锌基层，锌 - 锡混合氧化物层，成核层，和（iii）最后的电介质涂层包括由厚度大于3nm的氧化硅以外的氧化物制成的层与由其上叠加厚度大于10nm的氮化硅或氧化硅制成的层重叠。

4. 发明申请

US20160122237A1 LOW-EMISSIVITY AND ANTI-SOLAR GLAZING 有权
标题翻译：低功率和抗太阳能玻璃
公开(公告)号：US20160122237A1
公开(公告)日：2016-05-05
申请号：US14894466
申请日：2014-05-28
申请人： AGC GLASS EUROPE
发明人： Stijn MAHIEU , Anne-Christine BAUDOUIN , Marc HAUPTMANN , Jean-Michel DEPAUW
IPC分类号： C03C17/36 , G02B5/20 , G02B1/14 , G02B5/26
CPC分类号： C03C17/366 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/3681 , C03C2217/70 , C03C2218/156 , G02B1/14 , G02B5/208 , G02B5/26
摘要： The invention relates to low-emissivity and anti-solar glazing systems that change only very little in properties when they are subjected to a heat treatment. They comprise a stack of thin layers comprising an alternating arrangement of n infrared radiation reflecting functional layers and n+1 dielectric coatings, and a barrier layer directly superposed on the last functional layer furthest away from the substrate, characterised in that: (i) the first dielectric coating closest to the substrate comprises a layer made from an oxide, in direct contact with the substrate, (ii) the internal dielectric coating or coatings surrounded by two functional layers comprise a layer made from a silicon nitride or a silicon oxide with a thickness greater than 5 nm surrounded on both sides by layers made from an oxide other than silicon oxide with thicknesses greater than 5 nm, (iii) the barrier layer is based on zinc oxide or consists of an indium oxide possibly doped with tin, and (iv) the last dielectric coating furthest away from the substrate comprises, in order starting from the substrate: a layer made from an oxide other than silicon oxide with a thickness greater than 3 nm and a layer made from a silicon nitride or a silicon oxide with a thickness greater than 10 nm.
摘要翻译：本发明涉及低辐射率和抗太阳能玻璃窗系统，当它们进行热处理时其性能变化很小。它们包括一叠薄层，其包括反射功能层和n + 1电介质涂层的n个红外辐射的交替布置，以及直接叠加在最远离基底的最后功能层上的阻挡层，其特征在于：（i）最接近衬底的第一电介质涂层包括与衬底直接接触的由氧化物制成的层，（ii）由两个功能层包围的内部电介质涂层或涂层包括由氮化硅或氧化硅制成的层，厚度大于5nm的两面由厚度大于5nm的氧化硅之外的氧化物制成的层，（iii）阻挡层基于氧化锌或由可能掺杂锡的氧化铟组成， iv）最远离衬底的最后的电介质涂层包括从衬底开始的顺序：由氧化硅以外的氧化物制成的层， cnness大于3nm的层和由氮化硅或厚度大于10nm的氧化硅制成的层。

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