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2. 发明申请

US20150056380A1 ION SOURCE OF AN ION IMPLANTER 有权
标题翻译：离子植入物的离子源
公开(公告)号：US20150056380A1
公开(公告)日：2015-02-26
申请号：US13975206
申请日：2013-08-23
申请人： ADVANCED ION BEAM TECHNOLOGY , INC.
发明人： Stephen Edward Savas , Xiao Bai , Zhimin Wan , Peter M. Kopalidis
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/0815 , H01J2237/0817
摘要： An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.
摘要翻译：离子源使用至少一个感应线圈来产生交流磁场，以将rf / VHF功率耦合到容器内的等离子体中，其中所述激励线圈可以是单一组的匝，每一匝具有凸角或多个单独的绕组组。励磁线圈位于与抽出狭缝相对的容器的外侧和附近，并且平行于提取狭缝的长度尺寸延伸。位于外部或与容器的阱集成在一起的导电屏蔽用于阻挡与等离子体的电容耦合和/或收集任何rf / VHF电流可以耦合到等离子体中。位于容器和线圈组之间的导电屏蔽件可以屏蔽来自激励线圈的电容耦合的等离子体，或者被调谐为具有较高的rf / VHF电压以点燃或清洁源极。

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