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1. 发明授权

US07544257B2 Single crystal shape memory alloy devices and methods 有权
标题翻译：单晶形状记忆合金装置及方法
公开(公告)号：US07544257B2
公开(公告)日：2009-06-09
申请号：US10588413
申请日：2005-05-04
申请人： A. David Johnson , Michael Bokaie , Valery Martynov
发明人： A. David Johnson , Michael Bokaie , Valery Martynov
IPC分类号： C22F1/08
CPC分类号： C22C9/01 , A61L31/022 , A61L31/088 , A61L31/10 , A61L31/14 , A61L2400/16 , A61M25/00 , A61M2025/09141 , C22F1/006 , C30B15/00 , C30B29/52 , F16F1/021 , F24S30/20 , F24S2030/11 , F28D15/0241 , H01H37/323 , Y02E10/47
摘要： Devices and methods of making devices having one or more components made of single crystal shape memory alloy capable of large recoverable distortions, defined herein as “hyperelastic” SMA. Recoverable Strains are as large as 9 percent, and in special circumstances as large as 22 percent. Hyperelastic SMAs exhibit no creep or gradual change during repeated cycling because there are no crystal boundaries. Hyperelastic properties are inherent in the single crystal as formed: no cold work or special heat treatment is necessary. Alloy components are Cu—Al—X where X may be Ni, Fe, Co, Mn. Single crystals are pulled from melt as in the Stepanov method and quenched by rapid cooling to prevent selective precipitation of individual elemental components. Conventional methods of finishing are used: milling, turning, electro-discharge machining, abrasion. Fields of application include aerospace, military, automotive, medical devices, microelectronics, and consumer products.
摘要翻译：制造具有由具有大的可恢复失真的单晶形状记忆合金制成的一个或多个部件的装置的装置和方法，在本文定义为“超弹性”SMA。可回收的菌株高达9％，在特殊情况下高达22％。超弹性SMA在重复循环过程中没有表现出蠕变或逐渐变化，因为没有晶界。超弹性性质在形成的单晶中是固有的：不需要冷作或特殊的热处理。合金成分是Cu-Al-X，其中X可以是Ni，Fe，Co，Mn。单晶从熔融中拉伸，如Stepanov方法，并通过快速冷却淬火，以防止各种元素组分的选择性沉淀。使用常规的精加工方法：铣削，车削，放电加工，磨损。应用领域包括航空航天，军事，汽车，医疗器械，微电子和消费品。

2. 发明授权

US07632361B2 Single crystal shape memory alloy devices and methods 有权
公开(公告)号：US07632361B2
公开(公告)日：2009-12-15
申请号：US11041185
申请日：2005-01-24
申请人： A. David Johnson , Michael Bokaie , Valery Martynov
发明人： A. David Johnson , Michael Bokaie , Valery Martynov
IPC分类号： C22C9/01
CPC分类号： C22C9/01 , A61L31/022 , A61L31/088 , A61L31/10 , A61L31/14 , A61L2400/16 , A61M25/00 , A61M2025/09141 , C22F1/006 , C30B15/00 , C30B29/52 , F16F1/021 , F24S30/20 , F24S2030/11 , F28D15/0241 , H01H37/323 , Y02E10/47
摘要： Devices and methods of making devices having one or more components made of single crystal shape memory alloy capable of large recoverable distortions, defined herein as “hyperelastic” SMA. Recoverable Strains are as large as 9 percent, and in special circumstances as large as 22 percent. Hyperelastic SMAs exhibit no creep or gradual change during repeated cycling because there are no crystal boundaries. Hyperelastic properties are inherent in the single crystal as formed: no cold work or special heat treatment is necessary. Alloy components are Cu—Al—X where X may be Ni, Fe, Co, Mn. Single crystals are pulled from melt as in the Stepanov method and quenched by rapid cooling to prevent selective precipitation of individual elemental components. Conventional methods of finishing are used: milling, turning, electro-discharge machining, abrasion. Fields of application include aerospace, military, automotive, medical devices, microelectronics, and consumer products.

3. 发明申请

US20090171294A1 Single crystal shape memory alloy devices and methods 有权
公开(公告)号：US20090171294A1
公开(公告)日：2009-07-02
申请号：US11041185
申请日：2005-01-24
申请人： A. David Johnson , Michael Bokaie , Valery Martynov
发明人： A. David Johnson , Michael Bokaie , Valery Martynov
IPC分类号： A61M25/09 , C22F1/08 , F16F1/14 , F16F1/44 , F16F1/46 , F16F1/18
CPC分类号： C22C9/01 , A61L31/022 , A61L31/088 , A61L31/10 , A61L31/14 , A61L2400/16 , A61M25/00 , A61M2025/09141 , C22F1/006 , C30B15/00 , C30B29/52 , F16F1/021 , F24S30/20 , F24S2030/11 , F28D15/0241 , H01H37/323 , Y02E10/47
摘要： Devices and methods of making devices having one or more components made of single crystal shape memory alloy capable of large recoverable distortions, defined herein as “hyperelastic” SMA. Recoverable Strains are as large as 9 percent, and in special circumstances as large as 22 percent. Hyperelastic SMAs exhibit no creep or gradual change during repeated cycling because there are no crystal boundaries. Hyperelastic properties are inherent in the single crystal as formed: no cold work or special heat treatment is necessary. Alloy components are Cu—Al—X where X may be Ni, Fe, Co, Mn. Single crystals are pulled from melt as in the Stepanov method and quenched by rapid cooling to prevent selective precipitation of individual elemental components. Conventional methods of finishing are used: milling, turning, electro-discharge machining, abrasion. Fields of application include aerospace, military, automotive, medical devices, microelectronics, and consumer products.

4. 发明申请

US20080075557A1 Constant load bolt 审中-公开
标题翻译：恒负荷螺栓
公开(公告)号：US20080075557A1
公开(公告)日：2008-03-27
申请号：US11526138
申请日：2006-09-22
申请人： A. David Johnson , Michael Bokaie , Valery Martynov
发明人： A. David Johnson , Michael Bokaie , Valery Martynov
IPC分类号： F16B35/00
CPC分类号： F16B1/0014 , F16B31/04 , F16B35/041
摘要： Devices and methods for making fasteners, such as bolts, having one or more components made of single crystal shape memory alloy capable of large recoverable distortions, and in particular having a plateau in the stress-strain relationship. A constant load is applied by a bolt that is tightened until the force exerted by the bolt is equal to the stress multiplied by the cross-section of a tension component in the bolt. Increasing or decreasing the length of the tension component by as much as several percent causes a negligible change in the load.
摘要翻译：用于制造紧固件的装置和方法，例如螺栓，其具有由具有大的可恢复变形的单晶形状记忆合金制成的一个或多个部件，并且特别是具有应力 - 应变关系的平台。通过拧紧的螺栓施加恒定载荷，直到由螺栓施加的力等于应力乘以螺栓中的张力分量的横截面。将张力分量的长度增加或减少多达百分之几会导致负载变化微乎其微。

5. 发明授权

US07422403B1 Non-explosive releasable coupling device 失效
标题翻译：不爆炸可释放联轴器
公开(公告)号：US07422403B1
公开(公告)日：2008-09-09
申请号：US10972745
申请日：2004-10-25
申请人： A. David Johnson , Michael Bokaie , Valery Martynov
发明人： A. David Johnson , Michael Bokaie , Valery Martynov
IPC分类号： F16B35/00
CPC分类号： F16B35/00 , B23P11/025 , B64G1/641 , F16B1/0014 , F16B5/02 , Y10S411/02
摘要： A device and method for holding or clamping components together, and with the clamping being selectively loosened to permit the components to move through a predetermined distance without being fully released. A bolt has its head end attached to one component and its threaded end attached to the other component. A portion of the bolt's shank is formed with a necked-down portion. An actuator of shape memory alloy material is mounted about the bolt. When energized by heat, the actuator expands and exerts a great force which stretches the bolt, permanently deforming the bolt. This enables limited movement of the components while still restraining them from separating.
摘要翻译：一种用于将部件保持或夹持在一起并且夹紧被选择性松开以允许部件移动预定距离而不被完全释放的装置和方法。螺栓的头部端部附接到一个部件，其螺纹端部连接到另一个部件。螺栓杆的一部分形成有颈缩部分。形状记忆合金材料的致动器围绕螺栓安装。当通过加热激励时，致动器膨胀并施加很大的力，其拉伸螺栓，使螺栓永久变形。这使得组件的有限运动同时仍然限制它们的分离。

6. 发明申请

US20070137740A1 Single crystal shape memory alloy devices and methods 有权
标题翻译：单晶形状记忆合金装置及方法
公开(公告)号：US20070137740A1
公开(公告)日：2007-06-21
申请号：US10588413
申请日：2005-05-04
申请人： A. Johnson , Michael Bokaie , Valery Martynov
发明人： A. Johnson , Michael Bokaie , Valery Martynov
IPC分类号： C22F1/00
CPC分类号： C22C9/01 , A61L31/022 , A61L31/088 , A61L31/10 , A61L31/14 , A61L2400/16 , A61M25/00 , A61M2025/09141 , C22F1/006 , C30B15/00 , C30B29/52 , F16F1/021 , F24S30/20 , F24S2030/11 , F28D15/0241 , H01H37/323 , Y02E10/47
摘要： Devices and methods of making devices having one or more components made of single crystal shape memory alloy capable of large recoverable distortions, defined herein as “hyperelastic” SMA. Recoverable Strains are as large as 9 percent, and in special circumstances as large as 22 percent. Hyperelastic SMAs exhibit no creep or gradual change during repeated cycling because there are no crystal boundaries. Hyperelastic properties are inherent in the single crystal as formed: no cold work or special heat treatment is necessary. Alloy components are Cu—Al—X where X may be Ni, Fe, Co, Mn. Single crystals are pulled from melt as in the Stepanov method and quenched by rapid cooling to prevent selective precipitation of individual elemental components. Conventional methods of finishing are used: milling, turning, electro-discharge machining, abrasion. Fields of application include aerospace, military, automotive, medical devices, microelectronics, and consumer products.
摘要翻译：制造具有由具有大的可恢复失真的单晶形状记忆合金制成的一个或多个部件的装置的装置和方法，在本文定义为“超弹性”SMA。可回收的菌株高达9％，在特殊情况下高达22％。超弹性SMA在重复循环过程中没有表现出蠕变或逐渐变化，因为没有晶界。超弹性性质在形成的单晶中是固有的：不需要冷作或特殊的热处理。合金成分是Cu-Al-X，其中X可以是Ni，Fe，Co，Mn。单晶从熔融中拉伸，如Stepanov方法，并通过快速冷却淬火，以防止各种元素组分的选择性沉淀。使用常规的精加工方法：铣削，车削，放电加工，磨损。应用领域包括航空航天，军事，汽车，医疗器械，微电子和消费品。

7. 发明授权

US07040323B1 Thin film intrauterine device 失效
公开(公告)号：US07040323B1
公开(公告)日：2006-05-09
申请号：US10638282
申请日：2003-08-07
申请人： Leticia Menchaca , A. David Johnson , Vikas Gupta , Valery Martynov
发明人： Leticia Menchaca , A. David Johnson , Vikas Gupta , Valery Martynov
IPC分类号： A61F6/06
CPC分类号： A61F6/14
摘要： Contraceptive intrauterine devices made of thin film shape memory alloy materials. The devices are formed in three-dimensional shapes which contact uterus tissue of a human or other mammal to prevent conception. In certain embodiments, structural features such as tails, fenestrations, ridges or grooves are formed on the devices to enhance the contraceptive effect.

8. 发明授权

US06746890B2 Three dimensional thin film devices and methods of fabrication 有权
公开(公告)号：US06746890B2
公开(公告)日：2004-06-08
申请号：US10198654
申请日：2002-07-17
申请人： Vikas Gupta , A. David Johnson , Letecia Menchaca , Valery Martynov
发明人： Vikas Gupta , A. David Johnson , Letecia Menchaca , Valery Martynov
IPC分类号： H01L2100
CPC分类号： A61F2/013 , A61B17/12 , A61B17/12022 , A61B17/12113 , A61B17/12131 , A61B17/12172 , A61B17/221 , A61B2017/00526 , A61B2017/00867 , A61B2017/1205 , A61B2017/2212 , A61F2/91 , A61F2002/018 , A61F2230/0006 , A61F2230/0063 , A61F2230/0067 , A61F2230/0069 , A61F2230/008
摘要： Methods for making thin film multiple layered three-dimensional devices using two-dimensional MEMS techniques for use in a variety of applications including endovascular, endolumenal, intracranial, and intraocular medical applications. In the general method, a thin film first layer of the device material is deposited over a release layer which in turn is deposited on a substrate. An other release layer is deposited on the first device layer, with portions of the other release layer removed, leaving a pattern in the first device layer. In a similar manner a second layer of device material is formed in a pattern overlying the first device layer with portions of the two layers joined together leaving a portion of the release layer between them. The two release layers are removed and the first and second layers of the device material are formed into a three-dimensional shape suitable for the desired end-use application.

9. 发明授权

US06624730B2 Thin film shape memory alloy actuated microrelay 失效
标题翻译：薄膜形状记忆合金致动微型继电器
公开(公告)号：US06624730B2
公开(公告)日：2003-09-23
申请号：US09821840
申请日：2001-03-28
申请人： A. David Johnson , Vikas Galhotra , Vikas Gupta , Valery Martynov
发明人： A. David Johnson , Vikas Galhotra , Vikas Gupta , Valery Martynov
IPC分类号： H01H5122
CPC分类号： H01H1/0036 , H01H61/0107 , H01H2001/0047 , H01H2061/006
摘要： A microrelay device formed on a silicon substrate wafer for use in opening and closing a current path in a circuit. A pair of electrically conducting latching beams are attached at their proximal ends to terminals on the substrate. Proximal ends of the beams have complementary shapes which releasably fit together to latch the beams and close the circuit. A pair of shape memory alloy actuators are selectively operated to change shapes which bend one of the beams in a direction which latches the distal ends, or bend the other beam to release the distal ends and open the circuit. The microrelay is bistable in its two positions, and power to the actuators is applied only for switching it open or closed.
摘要翻译：一种在硅衬底晶片上形成的用于打开和闭合电路中的电流通路的微型继电器件。一对导电的锁定梁在其近端处附接到基板上的端子。梁的近端具有可释放地装配在一起以锁定梁并闭合电路的互补形状。一对形状记忆合金致动器被选择性地操作以改变沿着锁定远端的方向弯曲光束之一的形状，或者弯曲另一个光束以释放远端并打开电路。微型继电器在其两个位置是双稳态的，并且致动器的电力仅用于将其打开或关闭。

10. 发明授权

US06620634B2 Method of accurately measuring compositions of thin film shape memory alloys 失效
标题翻译：精确测量薄膜形状记忆合金组成的方法
公开(公告)号：US06620634B2
公开(公告)日：2003-09-16
申请号：US10051849
申请日：2002-01-17
申请人： A. David Johnson , Valery Martynov
发明人： A. David Johnson , Valery Martynov
IPC分类号： H01L3126
CPC分类号： G01N23/2252
摘要： A method of measuring with high accuracy the composition of shape memory alloy elements that are sputter deposited in thin film form. An element of known composition is polished with a flat surface. An element of unknown composition is sputter deposited onto the surface. Miniature openings are made by photography in the unknown layer, exposing an area of the known substrate. With adjacent areas of the two samples then only microns apart, accurate measurements of the compositions are made by comparing the X-ray spectra resulting from an electron beam scanning across the two areas.
摘要翻译：以高精度测量以薄膜形式溅射沉积的形状记忆合金元素的组成的方法。已知组合物的元素用平坦表面抛光。未知组成的元素被溅射沉积在表面上。通过在未知层中的摄影制作微型开口，暴露已知基底的区域。对于两个样品的相邻区域，只有微小的差距，通过比较从两个区域的电子束扫描得到的X射线光谱，可以对组合物进行准确的测量。

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