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1. 发明申请

US20110198756A1 Organometallic Precursors and Related Intermediates for Deposition Processes, Their Production and Methods of Use 审中-公开
标题翻译：有机金属前体及相关中间体，用于沉积过程，其生产和使用方法
公开(公告)号：US20110198756A1
公开(公告)日：2011-08-18
申请号：US12067285
申请日：2006-08-25
申请人： ü Thenappan , Chien-Wei Li , David Nalewajek , Martin Cheney , Jingyu Lao , Eric Eisenbraun , Min Li , Nathaniel Berliner , Mikko Ritala , Markku Leskela , kaupo Kukli , Linda Cheney
发明人： ü Thenappan , Chien-Wei Li , David Nalewajek , Martin Cheney , Jingyu Lao , Eric Eisenbraun , Min Li , Nathaniel Berliner , Mikko Ritala , Markku Leskela , kaupo Kukli , Linda Cheney
IPC分类号： H01L21/3205 , H01L29/43 , H01L23/48
CPC分类号： C07F17/02 , C23C16/18
摘要： Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC′, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C′ comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C′ further and individually is substituted with a ligand represented by the formula CH(X)R1, wherein X is a N, P, or S-substituted functional group or hydroxyl, and R1 is hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.
摘要翻译：已经提供了可以在非常高的生长速率，低电阻率和低水平的碳，氧和氮杂质的基底上沉积保形薄钌薄膜的气相沉积前体。本文所述的前体包括具有式CMC'的化合物，其中M包含金属或准金属; C包括取代或未取代的无环烯烃，环烯烃或环烯烃环结构; 和C'包括取代或未取代的无环烯烃，环烯烃或环烯烃环结构; 其中C和C'中的至少一个进一步和单独地被式CH（X）R 1表示的配体取代，其中X是N，P或S-取代的官能团或羟基，并且R 1是氢或烃。还描述了气相沉积前体和所得膜的生产方法，以及气相沉积前体和所得膜的用途和最终用途。

2. 发明授权

US07808106B1 Nano-laminate difussion barrier for direct electrochemical deposition copper 失效
标题翻译：用于直接电化学沉积铜的纳米层压板扩散屏障
公开(公告)号：US07808106B1
公开(公告)日：2010-10-05
申请号：US12118671
申请日：2008-05-09
申请人： Eric Eisenbraun
发明人： Eric Eisenbraun
IPC分类号： H01L23/52 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/18 , C23C16/34 , C23C16/45529 , C23C16/45538 , C25D7/123 , H01L21/76843 , H01L21/76846 , H01L21/76873
摘要： A plasma enhanced atomic layer deposition (PEALD)-grown mixed-phase/nano-laminate barrier having the robust barrier properties of TaN with direct plate characteristics of Ru. Ru:TaN layers as thin as 5 nm act both as robust copper barrier and as a copper direct plating layer. Direct plated copper films exhibit preferred (111) orientation with the use of medium acid level electrolyte (0.8M H2SO4) and higher plating current density (10 mA/cm2) during the copper electrochemical deposition process. (111) texture in the direct plated copper films improves as Ru content in the mixed-phase barrier is increased. Direct plated copper films possess larger grain size characteristics as compared to copper electroplated on PVD copper seed. The filling characteristics in sub-65 nm features are equivalent for seeded copper and Ru:TaN barrier films without a seed layer.
摘要翻译：等离子体增强原子层沉积（PEALD）生长的混合相/纳米层压屏障，其具有鲁棒的阻挡特性的TaN，具有Ru的直接板特性。 Ru：薄至5nm的TaN层既作为坚固的铜屏障又作为铜直接镀层。在铜电化学沉积过程中，使用中等酸性电解质（0.8M H 2 SO 4）和更高的电镀电流密度（10mA / cm 2），直接电镀铜膜表现出优选的（111）取向。直接电镀铜膜中的（111）纹理随着混合相屏障中的Ru含量增加而改善。直接电镀铜膜与PVD铜晶种上电镀铜相比具有更大的晶粒尺寸特性。 65nm以下特征的填充特性对于没有种子层的接种铜和Ru：TaN阻挡膜是相当的。

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