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    • 2. 发明申请
    • Methods for Operating a Semiconductor Device
    • 操作半导体器件的方法
    • US20110317486A1
    • 2011-12-29
    • US13168102
    • 2011-06-24
    • Zhichao LuNadine CollaertMarc AoulaicheMalgorzata Jurczak
    • Zhichao LuNadine CollaertMarc AoulaicheMalgorzata Jurczak
    • G11C11/34H01L27/12
    • G11C11/404G11C2211/4016H01L29/7855
    • Multi-gate metal-oxide-semiconductor (MOS) transistors and methods of operating such multi-gate MOS transistors are disclosed. In one embodiment, the multi-gate MOS transistor comprises a first gate associated with a first body factor and comprising a first gate electrode for applying a first gate voltage, and a second gate associated with a second body factor greater than or equal to the first body factor and comprising a second gate electrode for applying a second gate voltage. The multi-gate MOS transistor further comprises a body of semiconductor material between the first dielectric layer and the second dielectric layer, where the semiconductor body comprises a first channel region located close to the first dielectric layer and a second channel region located close to the second dielectric layer. The multi-gate MOS transistor still further comprises a source region and a drain region each having a conductivity type different from a conductivity type of the body.
    • 公开了多栅极金属氧化物半导体(MOS)晶体管和操作这种多栅极MOS晶体管的方法。 在一个实施例中,多栅极MOS晶体管包括与第一体因子相关联的第一栅极,并且包括用于施加第一栅极电压的第一栅极电极和与第二栅极电压相关联的第二主体因子, 并且包括用于施加第二栅极电压的第二栅电极。 多栅极MOS晶体管还包括在第一介电层和第二介电层之间的半导体材料体,其中半导体主体包括位于靠近第一介电层的第一沟道区和靠近第二介质层的第二沟道区 电介质层。 多栅极MOS晶体管还包括源极区域和漏极区域,其各自具有不同于主体的导电类型的导电类型。
    • 9. 发明授权
    • Methods for operating a semiconductor device
    • 操作半导体器件的方法
    • US08391059B2
    • 2013-03-05
    • US13168102
    • 2011-06-24
    • Zhichao LuNadine CollaertMarc AoulaicheMalgorzata Jurczak
    • Zhichao LuNadine CollaertMarc AoulaicheMalgorzata Jurczak
    • G11C11/34
    • G11C11/404G11C2211/4016H01L29/7855
    • Multi-gate metal-oxide-semiconductor (MOS) transistors and methods of operating such multi-gate MOS transistors are disclosed. In one embodiment, the multi-gate MOS transistor comprises a first gate associated with a first body factor and comprising a first gate electrode for applying a first gate voltage, and a second gate associated with a second body factor greater than or equal to the first body factor and comprising a second gate electrode for applying a second gate voltage. The multi-gate MOS transistor further comprises a body of semiconductor material between the first dielectric layer and the second dielectric layer, where the semiconductor body comprises a first channel region located close to the first dielectric layer and a second channel region located close to the second dielectric layer. The multi-gate MOS transistor still further comprises a source region and a drain region each having a conductivity type different from a conductivity type of the body.
    • 公开了多栅极金属氧化物半导体(MOS)晶体管和操作这种多栅极MOS晶体管的方法。 在一个实施例中,多栅极MOS晶体管包括与第一体因子相关联的第一栅极,并且包括用于施加第一栅极电压的第一栅极电极和与第二栅极电压相关联的第二主体因子, 并且包括用于施加第二栅极电压的第二栅电极。 多栅极MOS晶体管还包括在第一介电层和第二介电层之间的半导体材料体,其中半导体主体包括位于靠近第一介电层的第一沟道区和靠近第二介质层的第二沟道区 电介质层。 多栅极MOS晶体管还包括源极区域和漏极区域,其各自具有不同于主体的导电类型的导电类型。