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1. 发明授权

US07800170B1 Power MOSFET device with tungsten spacer in contact hole and method 有权
标题翻译：功能MOSFET器件与钨隔离器接触孔及方法
公开(公告)号：US07800170B1
公开(公告)日：2010-09-21
申请号：US12533319
申请日：2009-07-31
申请人： Zeng-Yi He , Xiao-Ming Sui , Jian Wang , Si-Jie Shen
发明人： Zeng-Yi He , Xiao-Ming Sui , Jian Wang , Si-Jie Shen
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/4941 , H01L29/66734
摘要： The present invention discloses a power MOSFET device with an added tungsten spacer in its contact hole, and manufacturing methods for the device. The features of the device are as follows: It includes trench gate isolated in trench and source/body contacts formed in the contact hole, and the tungsten spacer between Ti/TiN barrier layer and aluminum metal layer, the tungsten spacer is deposited on the bottom corners of the contact hole to cover its bottom corners. The addition of tungsten spacer to the bottom corners of the contact hole can effectively eliminate the presence of pits at the corners and junction spiking due to poor step-coverage of the Ti/TiN barrier layer otherwise leading to direct contact of silicon with aluminum. Thus, the present invention prevents a power MOSFET device from failures due to Idss leakage thus insuring high device quality and yield.
摘要翻译：本发明公开了一种在其接触孔中具有添加的钨隔离物的功率MOSFET器件，以及该器件的制造方法。该器件的特点如下：它包括沟槽隔离的沟槽栅和形成在接触孔中的源/体接触，以及在Ti / TiN阻挡层和铝金属层之间的钨隔离物，钨隔离物沉积在底部接触孔的角部覆盖其底角。在接触孔的底部拐角处添加钨隔离层可以有效地消除由于Ti / TiN阻挡层的梯级覆盖不良导致硅与铝直接接触的拐角处的凹点和结尖的存在。因此，本发明防止功率MOSFET器件由于Idss泄漏而发生故障，从而确保了高的器件质量和产量。

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