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    • 1. 发明授权
    • Method for forming a thin-film, electrically blowable fuse with a reproducible blowing wattage
    • 用可重现的吹制瓦数形成薄膜可电熔熔断器的方法
    • US06372652B1
    • 2002-04-16
    • US09494633
    • 2000-01-31
    • Purakh Raj VermaZia Alan ShafiYu ShanZeng ZhengManju SarkarShao-Fu Sanford Chu
    • Purakh Raj VermaZia Alan ShafiYu ShanZeng ZhengManju SarkarShao-Fu Sanford Chu
    • H01L21302
    • H01L23/5256H01L2924/0002H01L2924/00
    • A method for forming a thin film, electrically blowable fuse with reproducible blowing wattage using a sacrificial metal patch over a fuse dielectric layer and two etch processes; wherein the first etch process is selective to the metal patch and the second etch process is selective to the fuse dielectric layer. A fuse element, having an element width, is formed over a semiconductor structure, and a fuse dielectric layer is formed over the fuse element. A sacrificial metal patch is formed on the fuse dielectric layer; wherein the patch width being greater than the fuse element width. A second dielectric layer is formed on the sacrificial metal patch, and additional metal layers and dielectric layers may be formed over the second dielectric layer, but only the dielectric layers will remain over the fuse element. The second dielectric layer and any overlying dielectric layers are patterned to form a fuse window opening, having a width greater than the sacrificial metal patch, using a first fuse window etch selective to the sacrificial metal patch. Then, the sacrificial metal patch is etched through the fuse window opening using a second fuse window etch selective to the fuse dielectric layer, leaving a reproducible thickness of the fuse dielectric layer overlying the fuse element; thereby providing a reproducible blowing wattage.
    • 一种用于在熔丝电介质层和两个蚀刻工艺上使用牺牲金属贴片形成具有可再现的吹扫功率的薄膜电可熔电熔丝的方法; 其中所述第一蚀刻工艺对所述金属贴片是选择性的,并且所述第二蚀刻工艺对所述熔丝电介质层是选择性的。 在半导体结构上形成具有元件宽度的熔丝元件,并且在保险丝元件上形成熔丝电介质层。 在熔丝绝缘层上形成牺牲金属贴片; 其中所述贴片宽度大于所述熔丝元件宽度。 在牺牲金属贴片上形成第二电介质层,并且可以在第二电介质层上形成附加的金属层和电介质层,但是只有电介质层将保留在熔丝元件上方。 使用对牺牲金属贴片选择性的第一熔丝窗口蚀刻,将第二电介质层和任何上覆电介质层图案化以形成具有大于牺牲金属贴片的宽度的熔丝窗口。 然后,使用对熔丝电介质层选择性的第二熔丝窗蚀刻,通过熔丝窗口蚀刻牺牲金属贴片,留下覆于熔丝元件上的熔丝电介质层的可再现厚度; 从而提供可重复的吹制瓦数。