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1. 发明授权

US08716718B2 Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate 有权
标题翻译：外延SiC单晶衬底及外延SiC单晶衬底的制造方法
公开(公告)号：US08716718B2
公开(公告)日：2014-05-06
申请号：US13617596
申请日：2012-09-14
申请人： Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
发明人： Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： C23C16/46 , C23C16/325 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/0262
摘要： An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.
摘要翻译：外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。

2. 发明申请

US20130009170A1 EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE 有权
标题翻译：外延SiC单晶基板及外延SiC单晶基板的制造方法
公开(公告)号：US20130009170A1
公开(公告)日：2013-01-10
申请号：US13617596
申请日：2012-09-14
申请人： Kenji MOMOSE , Michiya ODAWARA , Keiichi MATSUZAWA , Hajime OKUMURA , Kazutoshi KOJIMA , Yuuki ISHIDA , Hidekazu TSUCHIDA , Isaho KAMATA
发明人： Kenji MOMOSE , Michiya ODAWARA , Keiichi MATSUZAWA , Hajime OKUMURA , Kazutoshi KOJIMA , Yuuki ISHIDA , Hidekazu TSUCHIDA , Isaho KAMATA
IPC分类号： H01L29/24
CPC分类号： C23C16/46 , C23C16/325 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/0262
摘要： An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.
摘要翻译：外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。

3. 发明授权

US08007403B2 Work vehicle having hydraulic stepless speed changing apparatus 有权
标题翻译：具有液压无级变速装置的工作车辆
公开(公告)号：US08007403B2
公开(公告)日：2011-08-30
申请号：US12204336
申请日：2008-09-04
申请人： Yuuki Ishida , Hiroshi Shimada , Koji Nada , Masaru Nakaji , Hiroki Bessho , Masatake Murakawa , Yasunobu Nakatani
发明人： Yuuki Ishida , Hiroshi Shimada , Koji Nada , Masaru Nakaji , Hiroki Bessho , Masatake Murakawa , Yasunobu Nakatani
IPC分类号： F16H61/40
CPC分类号： F16H61/4017 , B60Y2200/41 , F16H47/02 , F16H59/54 , F16H61/4157 , F16H61/448 , Y10T477/621 , Y10T477/636
摘要： A work vehicle includes a hydraulic stepless speed changing apparatus and a gear type speed changing apparatus operable to receive output from the hydraulic stepless speed changing apparatus to convert it into a plurality of stages of speed. A return oil passage connected to a high-pressure side circuit of the hydraulic stepless speed changing apparatus is connected to a hydraulic tank. The return oil passage incorporates an unload valve and a throttle valve, between which an operably coupling mechanism is provided. This operably coupling mechanism switches over the unload valve to an unload condition in response to an operational displacement of a brake operating member for operating a brake to its braking side.
摘要翻译：工作车辆包括液压无级变速装置和齿轮式变速装置，其可操作以接收来自液压无级变速装置的输出，以将其转换成多级速度。与液压无级变速装置的高压侧回路连接的返回油路连接到液压箱。返回油通道包括卸载阀和节流阀，在其之间提供可操作的联接机构。响应于用于将制动器操作到其制动侧的制动操作构件的操作位移，该可操作的联接机构将卸载阀切换到卸载状态。

4. 发明申请

US20110006309A1 EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EXPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE 有权
标题翻译：外延SiC单晶基板及其制造方法SiC单晶基板
公开(公告)号：US20110006309A1
公开(公告)日：2011-01-13
申请号：US12677255
申请日：2008-09-12
申请人： Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
发明人： Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： C23C16/46 , C23C16/325 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/0262
摘要： An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.
摘要翻译：外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。

5. 发明申请

US20100206272A1 Fuel System for Vehicle with Engine 有权
标题翻译：带发动机的车辆燃油系统
公开(公告)号：US20100206272A1
公开(公告)日：2010-08-19
申请号：US12556234
申请日：2009-09-09
申请人： Yuuki Ishida , Hiroshi Shimada
发明人： Yuuki Ishida , Hiroshi Shimada
IPC分类号： F02M33/02
CPC分类号： F02M25/089
摘要： A fuel system for a vehicle with an engine includes: a fuel tank for storing fuel: first and second ports disposed on a wall of the fuel tank, between which wall and a fuel fluid level a clearance is created when the fuel is contained in an allowable maximal amount in the fuel tank of the vehicle in a horizontal state, the first and second ports being positioned frontward and rearward, respectively, in a longitudinal direction of the vehicle, and the first port and the second port being out of alignment in a lateral direction; a canister for adsorbing and releasing a fuel vapor; an inflow line for sending the fuel vapor generated in the fuel tank to the canister through the first and second ports; and a discharge line for sending the fuel vapor from the canister to an air-intake path to the engine.
摘要翻译：一种用于具有发动机的车辆的燃料系统包括：用于储存燃料的燃料箱：设置在燃料箱的壁上的第一和第二端口，当燃料被包含在燃料箱中时，在该壁和燃料流体水平之间产生间隙处于水平状态的车辆的燃料箱中允许的最大量，第一和第二端口分别位于车辆的纵向方向上的前后方向，并且第一端口和第二端口在一个横向; 用于吸附和释放燃料蒸气的罐; 用于通过第一和第二端口将在燃料箱中产生的燃料蒸汽发送到罐的流入管线; 以及用于将燃料蒸汽从罐发送到发动机的进气路径的排出管线。

6. 发明授权

US08146570B2 Fuel system for vehicle with engine 有权
标题翻译：带发动机的车辆燃油系统
公开(公告)号：US08146570B2
公开(公告)日：2012-04-03
申请号：US12556234
申请日：2009-09-09
申请人： Yuuki Ishida , Hiroshi Shimada
发明人： Yuuki Ishida , Hiroshi Shimada
IPC分类号： F02M33/04
CPC分类号： F02M25/089
摘要： A fuel system for a vehicle with an engine includes: a fuel tank for storing fuel: first and second ports disposed on a wall of the fuel tank, between which wall and a fuel fluid level a clearance is created when the fuel is contained in an allowable maximal amount in the fuel tank of the vehicle in a horizontal state, the first and second ports being positioned frontward and rearward, respectively, in a longitudinal direction of the vehicle, and the first port and the second port being out of alignment in a lateral direction; a canister for adsorbing and releasing a fuel vapor; an inflow line for sending the fuel vapor generated in the fuel tank to the canister through the first and second ports; and a discharge line for sending the fuel vapor from the canister to an air-intake path to the engine.
摘要翻译：一种用于具有发动机的车辆的燃料系统包括：用于储存燃料的燃料箱：设置在燃料箱的壁上的第一和第二端口，当燃料被包含在燃料箱中时，在该壁和燃料流体水平之间产生间隙处于水平状态的车辆的燃料箱中允许的最大量，第一和第二端口分别位于车辆的纵向方向上的前后方向，并且第一端口和第二端口在一个横向; 用于吸附和释放燃料蒸气的罐; 用于通过第一和第二端口将在燃料箱中产生的燃料蒸汽发送到罐的流入管线; 以及用于将燃料蒸汽从罐发送到发动机的进气路径的排出管线。

7. 发明申请

US20090239706A1 Work Vehicle Having Hydraulic Stepless Speed Changing Apparatus 有权
标题翻译：具有液压无级变速装置的工作车
公开(公告)号：US20090239706A1
公开(公告)日：2009-09-24
申请号：US12204336
申请日：2008-09-04
申请人： Yuuki Ishida , Hiroshi Shimada , Koji Nada , Masaru Nakaji , Hiroki Bessho , Masatake Murakawa , Yasunobu Nakatani
发明人： Yuuki Ishida , Hiroshi Shimada , Koji Nada , Masaru Nakaji , Hiroki Bessho , Masatake Murakawa , Yasunobu Nakatani
IPC分类号： B60W10/00 , B60W30/18
CPC分类号： F16H61/4017 , B60Y2200/41 , F16H47/02 , F16H59/54 , F16H61/4157 , F16H61/448 , Y10T477/621 , Y10T477/636
摘要： A work vehicle includes a hydraulic stepless speed changing apparatus and a gear type speed changing apparatus operable to receive output from the hydraulic stepless speed changing apparatus to convert it into a plurality of stages of speed. A return oil passage connected to a high-pressure side circuit of the hydraulic stepless speed changing apparatus is connected to a hydraulic tank. The return oil passage incorporates an unload valve and a throttle valve, between which an operably coupling mechanism is provided. This operably coupling mechanism switches over the unload valve to an unload condition in response to an operational displacement of a brake operating member for operating a brake to its braking side.
摘要翻译：工作车辆包括液压无级变速装置和齿轮式变速装置，其可操作以接收来自液压无级变速装置的输出，以将其转换成多级速度。与液压无级变速装置的高压侧回路连接的返回油路连接到液压箱。返回油通道包括卸载阀和节流阀，在其之间提供可操作的联接机构。响应于用于将制动器操作到其制动侧的制动操作构件的操作位移，该可操作的联接机构将卸载阀切换到卸载状态。

8. 发明授权

US08293623B2 Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate 有权
标题翻译：外延SiC单晶衬底及外延SiC单晶衬底的制造方法
公开(公告)号：US08293623B2
公开(公告)日：2012-10-23
申请号：US12677255
申请日：2008-09-12
申请人： Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
发明人： Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C23C16/46 , C23C16/325 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/0262
摘要： An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.
摘要翻译：外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。

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