专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5670398A Method of manufacturing thin film transistor having a double channel 失效
标题翻译：具有双通道的薄膜晶体管的制造方法
公开(公告)号：US5670398A
公开(公告)日：1997-09-23
申请号：US559880
申请日：1995-11-20
申请人： Sung Wook Yin , Yun Ki Kim
发明人： Sung Wook Yin , Yun Ki Kim
IPC分类号： G02F1/136 , H01L21/336 , H01L27/12 , H01L29/786 , H01L21/265
CPC分类号： H01L29/78696 , H01L29/6675
摘要： This invention provides a method for manufacturing a thin film transistor which comprised the steps of providing an oxide layer; etching a portion of the oxide layer so that a recess is formed; forming a first channel layer on the resulting structure; forming a first gate oxide layer on the first channel layer in a portion including the recess region; forming a polysilicon layer on the resulting structure, filling in the recess region; etching back the polysilicon layer until the surface of a portion of the first gate oxide layer, leaving the residual layer on the first channel layer, which is exposed by the first gate oxide layer, wherein the surface of the resulting structure has uniform topology by the etching process; forming a second gate oxide layer on the polysilicon layer; forming a second channel layer on the resulting structure; and implanting impurity ions for forming source/drain regions, whereby the source/drain region consists of multi-layers, the first channel layer, the second polysilicon layer and the second channel layer.
摘要翻译：本发明提供一种制造薄膜晶体管的方法，其包括提供氧化物层的步骤; 蚀刻氧化物层的一部分以形成凹陷; 在所得结构上形成第一通道层; 在包括所述凹部区域的部分中的所述第一沟道层上形成第一栅氧化层; 在所得结构上形成多晶硅层，填充在凹陷区域中; 蚀刻回多晶硅层直到第一栅极氧化物层的一部分的表面，留下由第一栅极氧化物层暴露的第一沟道层上的残余层，其中所得结构的表面具有均匀的拓扑结构，由蚀刻工艺; 在所述多晶硅层上形成第二栅氧化层; 在所得结构上形成第二通道层; 以及注入用于形成源/漏区的杂质离子，由此源/漏区由多层，第一沟道层，第二多晶硅层和第二沟道层组成。

2. 发明授权

US08956629B2 Dental composition containing organic nanotube 有权
标题翻译：含有机纳米管的牙科成分
公开(公告)号：US08956629B2
公开(公告)日：2015-02-17
申请号：US12993090
申请日：2008-05-19
申请人： Myung-Hwan Oh , Won-Ho Kim , Mi Hyoun Ham , Jong-Hwi Lee , Yun-Ki Kim
发明人： Myung-Hwan Oh , Won-Ho Kim , Mi Hyoun Ham , Jong-Hwi Lee , Yun-Ki Kim
IPC分类号： A61K33/16 , A61K9/00 , A61K31/155 , A61P1/02 , A61P31/04 , B82Y5/00 , A61K6/083 , A61K6/00 , A61K6/09
CPC分类号： A61K6/083 , A61K6/0067 , A61K6/09 , Y10S977/919 , C08L33/04 , C08L25/04 , C08L63/00 , C08L75/16
摘要： Disclosed is a dental composition, comprising unsaturated double bond-containing monomers and/or oligomers, a catalytic amount of polymerization initiator to initiate polymerization, and a filler, wherein the dental composition comprises an organic nanotube containing an antibacterial or anticariogenic material to inhibit or prevent tooth decay.The dental composition comprises an organic nanotube containing an antibacterial or anticariogenic material, thus uniformly and continuously exhibiting anticariogenic and antibacterial activities, while avoiding deterioration in physical properties required for the dental material.
摘要翻译：公开了一种牙科用组合物，其包含不饱和双键的单体和/或低聚物，催化量的引发聚合的聚合引发剂和填料，其中所述牙科组合物包含含有抗细菌剂或抗龋齿材料的有机纳米管，以抑制或预防蛀牙牙科用组合物包含含有抗菌或抗焦虑物质的有机纳米管，从而均匀且连续地显示抗焦虑和抗菌活性，同时避免牙科材料所需的物理性质的恶化。

3. 发明授权

US06423608B1 Method of manufacturing a capacitor in a semiconductor integrated circuit and a capacitor fabricated thereby 有权
标题翻译：在半导体集成电路中制造电容器的方法和由此制造的电容器
公开(公告)号：US06423608B1
公开(公告)日：2002-07-23
申请号：US09704764
申请日：2000-11-03
申请人： Yun-Ki Kim
发明人： Yun-Ki Kim
IPC分类号： H01L2120
CPC分类号： H01L27/10855 , H01L27/10814 , H01L28/91
摘要： A capacitor in a semiconductor integrated circuit, and a method for fabricating the capacitor is disclosed. A method of an embodiment of the invention includes first providing a semiconductor substrate having disposed thereon an interlayer insulating layer. A lower sacrificial insulating layer and an upper etching stopper layer then are sequentially formed on the interlayer insulating layer on the semiconductor substrate. The upper etching stopper layer and the lower sacrificial insulating layer then are sequentially patterned to form a storage electrode hole, and to expose a predetermined portion of the interlayer insulating layer. The method then includes forming an outer cylindrical storage electrode in the storage electrode hole, a conductive liner surrounded by the outer cylindrical storage electrode, and an inner storage electrode surrounded by the conductive liner. Finally, the method of an embodiment of the invention includes selectively etching the conductive liner to expose an inner sidewall of the outer cylindrical storage electrode and an outer sidewall of the inner storage electrode. Depending on the storage electrode dimension, the inner storage electrode can exhibit a circular columnar configuration or a cylindrical configuration.
摘要翻译：公开了一种半导体集成电路中的电容器及其制造方法。本发明实施例的方法包括首先提供其上设置有层间绝缘层的半导体衬底。然后在半导体衬底上的层间绝缘层上依次形成下牺牲绝缘层和上蚀刻阻挡层。上蚀刻停止层和下牺牲绝缘层依次图案化以形成存储电极孔，并露出层间绝缘层的预定部分。该方法包括在存储电极孔中形成外圆柱形存储电极，由外圆柱形存储电极包围的导电衬垫和由导电衬垫包围的内部存储电极。最后，本发明实施例的方法包括选择性地蚀刻导电衬垫以暴露外圆柱形存储电极的内侧壁和内存储电极的外侧壁。根据存储电极尺寸，内部存储电极可呈圆柱形或圆柱形。

4. 发明授权

US07325310B2 Method for manufacturing a monolithic ink-jet printhead 失效
标题翻译：单片式喷墨打印头的制造方法
公开(公告)号：US07325310B2
公开(公告)日：2008-02-05
申请号：US11332276
申请日：2006-01-17
申请人： Yun-ki Kim
发明人： Yun-ki Kim
IPC分类号： B21D53/76 , H05B3/06 , B44C1/22
CPC分类号： B41J2/1629 , B41J2/14137 , B41J2/1603 , B41J2/1626 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1646 , B41J2202/03 , Y10T29/49083 , Y10T29/49401
摘要： A method for manufacturing an ink-jet printhead by coating a first photosensitive photoresist on the substrate and forming a passage plate, forming an ink chamber and an ink passage on the passage plate, burying the ink chamber and the ink passage using a second photoresist and forming a mold layer, forming a chamber cover layer on a top surface of the passage plate and the mold layer, forming a plurality of slots corresponding to the ink chamber and/or the ink passage in the chamber cover layer, supplying an etchant to the second photoresist through the slots and removing the second photoresist remaining in the ink chamber and the ink passage, and coating a third photoresist and forming a nozzle plate on the chamber cover layer.
摘要翻译：一种喷墨打印头的制造方法，在基板上涂布第一感光性光致抗蚀剂，形成通道板，在通道板上形成墨水室和墨水通道，使用第二光致抗蚀剂掩埋墨水室和墨水通道，形成模具层，在通道板和模具层的顶表面上形成腔室覆盖层，在腔室盖层中形成对应于墨水腔和/或墨水通道的多个狭槽，向蚀刻剂供应蚀刻剂第二光致抗蚀剂，并且去除留在墨室和油墨通道中的第二光致抗蚀剂，并涂覆第三光致抗蚀剂并在室盖层上形成喷嘴板。

5. 发明授权

US06286117B1 Circuits and methods for testing logic devices by modulating a test voltage with a noise signal 失效
标题翻译：通过用噪声信号调制测试电压来测试逻辑器件的电路和方法
公开(公告)号：US06286117B1
公开(公告)日：2001-09-04
申请号：US09102202
申请日：1998-06-22
申请人： Sung-jun Yun , Ki-hun Jung , Yun-ki Kim , Hyun-deok Park
发明人： Sung-jun Yun , Ki-hun Jung , Yun-ki Kim , Hyun-deok Park
IPC分类号： G01R3128
CPC分类号： G01R31/30
摘要： Noise is introduced into test inputs and voltage supplies provided to logic devices while under going testing by modulating a test voltage output with a noise signal to produce the test input. In particular, a noise signal and a test voltage output are generated. The test voltage output is modulated with the noise signal to provide a test input to the logic device. A more accurate approximation of an actual operating environment is thereby provided.
摘要翻译：在进行测试时，通过用噪声信号调制测试电压输出以产生测试输入，将噪声引入提供给逻辑器件的测试输入和电压电源。特别地，产生噪声信号和测试电压输出。测试电压输出用噪声信号调制，以向逻辑器件提供测试输入。从而提供了实际操作环境的更准确的近似。

6. 发明申请

US20110064776A1 DENTAL COMPOSITION CONTAINING ORGANIC NANOTUBE 有权
标题翻译：含有机碳纳米管的牙齿组合物
公开(公告)号：US20110064776A1
公开(公告)日：2011-03-17
申请号：US12993090
申请日：2008-05-19
申请人： Myung-Hwan Oh , Won-Ho Kim , Mi Hyoun Ham , Jong-Hwi Lee , Yun-Ki Kim
发明人： Myung-Hwan Oh , Won-Ho Kim , Mi Hyoun Ham , Jong-Hwi Lee , Yun-Ki Kim
IPC分类号： A61K33/06 , A61K9/00 , A61K31/155 , A61K31/14 , A61K33/24 , A61K33/42 , A61K31/722 , A61K33/14 , A61P1/02 , A61P31/04 , B82Y5/00
CPC分类号： A61K6/083 , A61K6/0067 , A61K6/09 , Y10S977/919 , C08L33/04 , C08L25/04 , C08L63/00 , C08L75/16
摘要： Disclosed is a dental composition, comprising unsaturated double bond-containing monomers and/or oligomers, a catalytic amount of polymerization initiator to initiate polymerization, and a filler, wherein the dental composition comprises an organic nanotube containing an antibacterial or anticariogenic material to inhibit or prevent tooth decay.The dental composition comprises an organic nanotube containing an antibacterial or anticariogenic material, thus uniformly and continuously exhibiting anticariogenic and antibacterial activities, while avoiding deterioration in physical properties required for the dental material.
摘要翻译：公开了一种牙科用组合物，其包含不饱和双键的单体和/或低聚物，催化量的引发聚合的聚合引发剂和填料，其中所述牙科组合物包含含有抗细菌剂或抗龋齿材料的有机纳米管，以抑制或预防蛀牙牙科用组合物包含含有抗菌或抗焦虑物质的有机纳米管，从而均匀且连续地显示抗焦虑和抗菌活性，同时避免牙科材料所需的物理性质的恶化。

7. 发明申请

US20080188017A1 Method of sorting dies using discrimination region 审中-公开
标题翻译：使用区分区域对模具进行分选的方法
公开(公告)号：US20080188017A1
公开(公告)日：2008-08-07
申请号：US12012268
申请日：2008-02-01
申请人： Young-Dae Kim , Yun-Ki Kim , Sung-Un Bae
发明人： Young-Dae Kim , Yun-Ki Kim , Sung-Un Bae
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A method of sorting dies using a discrimination region includes preparing a wafer including a chip region in which a plurality of dies are disposed and an edge region in which at least one discrimination region is disposed; testing the dies to prepare a wafer map for defining the coordinates of good dies and bad dies; allowing dies defined by the wafer map to correspond to the dies of the wafer; and confirming the correctness of the correspondence between the wafer and the wafer map by checking whether the discrimination region is included in the dies defined by the wafer map.
摘要翻译：使用鉴别区域对裸片进行分选的方法包括制备包括其中设置有多个管芯的芯片区域和设置有至少一个识别区域的边缘区域的晶片; 测试模具以制备用于定义好模具和坏模具的坐标的晶片图; 允许由晶片图定义的管芯对应于晶片的管芯; 并且通过检查由晶片图定义的管芯中是否包含鉴别区域来确认晶片和晶片映射之间的对应关系的正确性。

8. 发明申请

US20060114294A1 Monolithic ink-jet printhead and method for manufacturing the same 失效
标题翻译：单片喷墨打印头及其制造方法
公开(公告)号：US20060114294A1
公开(公告)日：2006-06-01
申请号：US11332276
申请日：2006-01-17
申请人： Yun-ki Kim
发明人： Yun-ki Kim
IPC分类号： B41J2/05
CPC分类号： B41J2/1629 , B41J2/14137 , B41J2/1603 , B41J2/1626 , B41J2/1628 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1646 , B41J2202/03 , Y10T29/49083 , Y10T29/49401
摘要： An ink-jet printhead and a method for manufacturing the same utilize coating a first photosensitive photoresist on the substrate and forming a passage plate, forming an ink chamber and an ink passage on the passage plate, burying the ink chamber and the ink passage using a second photoresist and forming a mold layer, forming a chamber cover layer on a top surface of the passage plate and the mold layer, forming a plurality of slots corresponding to the ink chamber and/or the ink passage in the chamber cover layer, supplying an etchant to the second photoresist through the slots and removing the second photoresist remaining in the ink chamber and the ink passage, and coating a third photoresist and forming a nozzle plate on the chamber cover layer.
摘要翻译：喷墨打印头及其制造方法利用在基板上涂覆第一感光性光致抗蚀剂并形成通道板，在通道板上形成墨水室和墨水通道，将墨水腔和墨水通道使用第二光致抗蚀剂并形成模具层，在通道板和模具层的顶表面上形成腔室覆盖层，在腔室覆盖层中形成与墨水腔和/或墨水通道对应的多个狭槽，通过槽蚀刻到第二光致抗蚀剂上，并去除残留在油墨室和油墨通道中的第二光致抗蚀剂，并涂覆第三光致抗蚀剂并在室盖层上形成喷嘴板。

9. 发明授权

US5883399A Thin film transistor having double channels and its manufacturing method 失效
标题翻译：具有双通道的薄膜晶体管及其制造方法
公开(公告)号：US5883399A
公开(公告)日：1999-03-16
申请号：US893544
申请日：1997-07-08
申请人： Sung Wook Yin , Yun Ki Kim
发明人： Sung Wook Yin , Yun Ki Kim
IPC分类号： G02F1/136 , H01L21/336 , H01L27/12 , H01L29/786 , H01L29/205
CPC分类号： H01L29/78696 , H01L29/6675
摘要： This invention provides a method for manufacturing a this film transistor which comprised the steps of providing an oxide layer; etching a portion of the oxide layer so that a recess is formed; forming a first channel layer on the resulting structure; forming a first gate oxide layer on the first channel layer in a portion including the recess region; forming a polysilicon layer on the resulting structure, filling in the recess region; etching back the polysilicon layer until the surface of a portion of the first gate oxide layer, leaving the residual layer on the first channel layer, which is exposed by the first gate oxide layer, wherein the surface of the resulting structure has uniform topology by the etching process; forming a second gate oxide layer on the polysilicon layer; forming a second channel layer on the resulting structure; and implanting impurity ions for forming source/drain regions, whereby the source/drain region consists of multi-layers, the first channel layer, the second polysilicon layer and the second channel layer.
摘要翻译：本发明提供一种制造该薄膜晶体管的方法，该方法包括以下步骤：提供氧化物层; 蚀刻氧化物层的一部分以形成凹陷; 在所得结构上形成第一通道层; 在包括所述凹部区域的部分中的所述第一沟道层上形成第一栅氧化层; 在所得结构上形成多晶硅层，填充在凹陷区域中; 蚀刻回多晶硅层直到第一栅极氧化物层的一部分的表面，留下由第一栅极氧化物层暴露的第一沟道层上的残余层，其中所得结构的表面具有均匀的拓扑结构，由蚀刻工艺; 在所述多晶硅层上形成第二栅氧化层; 在所得结构上形成第二通道层; 以及注入用于形成源/漏区的杂质离子，由此源/漏区由多层，第一沟道层，第二多晶硅层和第二沟道层组成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式