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1. 发明申请

US20100006881A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100006881A1
公开(公告)日：2010-01-14
申请号：US12498168
申请日：2009-07-06
申请人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
发明人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.
摘要翻译：提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

2. 发明授权

US07982234B2 Light emitting device and method for fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07982234B2
公开(公告)日：2011-07-19
申请号：US12498168
申请日：2009-07-06
申请人： Won Cheol Seo , Yun Goo Kim , Chang Youn Kim
发明人： Won Cheol Seo , Yun Goo Kim , Chang Youn Kim
IPC分类号： H01L29/72
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.
摘要翻译：提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

3. 发明授权

US08242530B2 Light emitting device and method for fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08242530B2
公开(公告)日：2012-08-14
申请号：US13076330
申请日：2011-03-30
申请人： Won Cheol Seo , Yun Goo Kim , Chang Youn Kim
发明人： Won Cheol Seo , Yun Goo Kim , Chang Youn Kim
IPC分类号： H01L29/72
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.
摘要翻译：提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

4. 发明申请

US20110175131A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110175131A1
公开(公告)日：2011-07-21
申请号：US13076330
申请日：2011-03-30
申请人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
发明人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.
摘要翻译：提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

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