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1. 发明授权

US09045717B2 Cleaning agent for semiconductor provided with metal wiring 有权
标题翻译：配有金属布线的半导体清洗剂
公开(公告)号：US09045717B2
公开(公告)日：2015-06-02
申请号：US13575452
申请日：2011-01-28
申请人： Mutsumi Nakanishi , Hiroshi Yoshimochi , Yukichi Koji
发明人： Mutsumi Nakanishi , Hiroshi Yoshimochi , Yukichi Koji
IPC分类号： C11D7/32 , C11D3/00 , C11D7/06 , C11D7/26 , C11D11/00 , H01L21/02
CPC分类号： C11D11/0047 , C11D3/0042 , C11D3/044 , C11D3/2065 , C11D3/2086 , C11D3/2096 , C11D3/28 , C11D7/06 , C11D7/265 , C11D7/267 , C11D7/3209 , C11D7/3218 , C11D7/3281 , H01L21/02074
摘要： A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal wiring. The cleaning agent is used at a step subsequent to chemical mechanical polishing in a manufacturing process of a microelectronic device in which a metal wiring, e.g., copper or tungsten, is formed.
摘要翻译：一种具有金属布线的微电子器件用清洗剂，具有优异的去除由抛光剂衍生的研磨粒子残留的能力，并具有优异的去除绝缘膜上的金属残留的能力，对金属布线具有优异的防腐蚀性。在其中形成金属布线（例如铜或钨）的微电子器件的制造过程中，在化学机械抛光后的步骤中使用清洁剂。

2. 发明申请

US20130270217A1 ETCHING SOLUTION FOR COPPER OR COPPER ALLOY 审中-公开
标题翻译：铜或铜合金蚀刻解决方案
公开(公告)号：US20130270217A1
公开(公告)日：2013-10-17
申请号：US13816862
申请日：2011-08-16
申请人： Yutaka Yoshida , Yukichi Koji
发明人： Yutaka Yoshida , Yukichi Koji
IPC分类号： C23F1/18
摘要： A solution for selectively etching copper or a copper alloy from a microelectronic device, wherein the device simultaneously includes copper or a copper alloy and nickel-containing material, the solution being an etching solution for copper or a copper alloy comprising a chelating agent having an acid group in a molecule, hydrogen peroxide, and a surfactant having an oxyethylene chain in a molecule.
摘要翻译：一种用于从微电子器件选择性地蚀刻铜或铜合金的解决方案，其中该器件同时包括铜或铜合金和含镍材料，该溶液是用于铜或铜合金的蚀刻溶液，其包含具有酸的螯合剂分子中的过氧化氢和分子中具有氧化乙烯链的表面活性剂。

3. 发明授权

US5396579A Membership function generator 失效
标题翻译：会员函数发生器
公开(公告)号：US5396579A
公开(公告)日：1995-03-07
申请号：US993844
申请日：1992-12-21
申请人： Yukichi Koji , Masanari Oh
发明人： Yukichi Koji , Masanari Oh
IPC分类号： G06G7/12 , G06F9/44 , G06G7/26 , G06N7/02 , G06N7/04
CPC分类号： G06G7/26 , G06N7/043 , Y10S706/90
摘要： A membership function generator including a maximum value arithmetic circuit for selecting a maximum voltage of a plurality of first input voltages to output the selected maximum voltage and a minimum value arithmetic circuit for selecting a minimum voltage of a plurality of second input voltages to output the selected minimum voltage. The outputs of the maximum and minimum value arithmetic circuits are input to a differential amplifier circuit. The output of the differential amplifier circuit is used as a membership function. Either at least one of the first input voltage or one of the second input voltages forms the basis of an inference and the remaining input voltages are set to a predetermined reference voltage.
摘要翻译：一种隶属函数发生器，包括用于选择多个第一输入电压的最大电压以输出所选择的最大电压的最大值运算电路，以及用于选择多个第二输入电压的最小电压以输出所选择的最大电压的最小值运算电路，最小电压。最大值和最小值运算电路的输出被输入到差分放大器电路。差分放大器电路的输出用作隶属函数。第一输入电压或第二输入电压中的至少一个形成推理的基础，并且剩余的输入电压被设置为预定的参考电压。

4. 发明授权

US10570522B2 Etching solution for copper or copper alloy 有权
公开(公告)号：US10570522B2
公开(公告)日：2020-02-25
申请号：US13816862
申请日：2011-08-16
申请人： Yutaka Yoshida , Yukichi Koji
发明人： Yutaka Yoshida , Yukichi Koji
IPC分类号： C23F1/18 , C23F1/44 , H01L21/3213 , H01L21/768 , H01L23/00
摘要： A solution for selectively etching copper or a copper alloy from a microelectronic device, wherein the device simultaneously includes copper or a copper alloy and nickel-containing material, the solution being an etching solution for copper or a copper alloy comprising a chelating agent having an acid group in a molecule, hydrogen peroxide, and a surfactant having an oxyethylene chain in a molecule.

5. 发明申请

US20130203643A1 CLEANING AGENT FOR SEMICONDUCTOR PROVIDED WITH METAL WIRING 有权
公开(公告)号：US20130203643A1
公开(公告)日：2013-08-08
申请号：US13575452
申请日：2011-01-28
申请人： Mutsumi Nakanishi , Hiroshi Yoshimochi , Yukichi Koji
发明人： Mutsumi Nakanishi , Hiroshi Yoshimochi , Yukichi Koji
IPC分类号： C11D7/32
CPC分类号： C11D11/0047 , C11D3/0042 , C11D3/044 , C11D3/2065 , C11D3/2086 , C11D3/2096 , C11D3/28 , C11D7/06 , C11D7/265 , C11D7/267 , C11D7/3209 , C11D7/3218 , C11D7/3281 , H01L21/02074
摘要： A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal wiring. The cleaning agent is used at a step subsequent to chemical mechanical polishing in a manufacturing process of a microelectronic device in which a metal wiring, e.g., copper or tungsten, is formed.

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