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1. 发明授权

US08258472B2 Charged particle radiation device and image capturing condition determining method using charged particle radiation device 有权
标题翻译：带电粒子辐射装置和使用带电粒子辐射装置的图像捕获条件确定方法
公开(公告)号：US08258472B2
公开(公告)日：2012-09-04
申请号：US13142153
申请日：2009-11-19
申请人： Tamotsu Shindo , Yuji Tange
发明人： Tamotsu Shindo , Yuji Tange
IPC分类号： G01N23/22 , H01J37/28 , H01J37/26
CPC分类号： G01B15/04 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A charged particle radiation device wherein the position or the size of a FOV can be easily determined even if a number of measuring points are provided on a sample, and an image capturing condition determining method using the charged particle radiation device are provided. An image capturing condition determining method wherein the field of view of a charged particle radiation device is determined so as to include a plurality of measuring points, characterized in that whether or not the measuring points are overlapped with four sides of the field of view is judged; the field of view is moved so that the measuring points are moved to the inside or outside of the field of view; and the position of the field of view after being moved is determined as a position of the field of view of the charged particle radiation device, and a device to realize the method are proposed. Further, a method for judging whether or not the measuring points are overlapped with the four sides, and changing the size of the field of view so as not to overlap the measuring points with each side, and a device therefor are proposed.
摘要翻译：一种带电粒子辐射装置，其中即使在样本上设置多个测量点也可以容易地确定FOV的位置或尺寸，并且提供使用带电粒子辐射装置的图像捕获条件确定方法。一种图像拍摄条件确定方法，其中确定带电粒子辐射装置的视野以便包括多个测量点，其特征在于，判断测量点是否与视场的四个边重叠 ; 移动视野使得测量点移动到视场的内部或外部; 并且将移动后的视场的位置确定为带电粒子辐射装置的视场的位置，并且提出了实现该方法的装置。此外，还提供了一种用于判断测量点是否与四边重叠的方法，并且改变视场的尺寸以使得不与每侧的测量点重叠，并提出了一种装置。

2. 发明授权

US6127683A Electron beam drawing apparatus 失效
标题翻译：电子束描绘装置
公开(公告)号：US6127683A
公开(公告)日：2000-10-03
申请号：US396413
申请日：1999-09-15
申请人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
发明人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
IPC分类号： G03F7/20 , H01J37/304 , A61N5/00
CPC分类号： B82Y10/00 , G03F7/2061 , H01J37/3045 , H01J2237/30455 , H01J2237/3175
摘要： An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.
摘要翻译：一种高产量的电子束拉制工艺，能够应对下层曝光装置或光学还原曝光装置的静态失真和动态变形的变化。对于预定数量的芯片，检测在晶片上形成的每个芯片中形成的至少两个标记，并且根据检测到的标记和晶片坐标的位置确定晶片平面中每个芯片的形状失真与晶片坐标之间的关系通过统计处理设计标记的位置。通过使用确定的芯片形状失真和晶片坐标之间的关系来校正在各个芯片上绘制的图案，在所有芯片中绘制图案。因此，无需任何手动调整，可以以高产量和高精度实现与较低层的重叠曝光。

3. 发明申请

US20110260058A1 CHARGED PARTICLE RADIATION DEVICE AND IMAGE CAPTURING CONDITION DETERMINING METHOD USING CHARGED PARTICLE RADIATION DEVICE 有权
标题翻译：充电颗粒辐射装置和图像捕获条件使用充电颗粒辐射装置确定方法
公开(公告)号：US20110260058A1
公开(公告)日：2011-10-27
申请号：US13142153
申请日：2009-11-19
申请人： Tamotsu Shindo , Yuji Tange
发明人： Tamotsu Shindo , Yuji Tange
IPC分类号： G01N23/22
CPC分类号： G01B15/04 , H01J37/222 , H01J37/28 , H01J2237/24578 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A charged particle radiation device wherein the position or the size of a FOV can be easily determined even if a number of measuring points are provided on a sample, and an image capturing condition determining method using the charged particle radiation device are provided. An image capturing condition determining method wherein the field of view of a charged particle radiation device is determined so as to include a plurality of measuring points, characterized in that whether or not the measuring points are overlapped with four sides of the field of view is judged; the field of view is moved so that the measuring points are moved to the inside or outside of the field of view; and the position of the field of view after being moved is determined as a position of the field of view of the charged particle radiation device, and a device to realize the method are proposed. Further, a method for judging whether or not the measuring points are overlapped with the four sides, and changing the size of the field of view so as not to overlap the measuring points with each side, and a device therefor are proposed.
摘要翻译：一种带电粒子辐射装置，其中即使在样本上设置多个测量点也可以容易地确定FOV的位置或尺寸，并且提供使用带电粒子辐射装置的图像捕获条件确定方法。一种图像拍摄条件确定方法，其中确定带电粒子辐射装置的视场以便包括多个测量点，其特征在于，判断测量点是否与视场的四个边重叠 ; 移动视野使得测量点移动到视场的内部或外部; 并且将移动后的视场的位置确定为带电粒子辐射装置的视场的位置，并且提出了实现该方法的装置。此外，还提供了一种用于判断测量点是否与四边重叠的方法，并且改变视场的尺寸以使得不与每侧的测量点重叠，并提出了一种装置。

4. 发明授权

US06337486B2 Electron beam drawing process and electron beam drawing apparatus 失效
标题翻译：电子束拉制工艺和电子束拉制装置
公开(公告)号：US06337486B2
公开(公告)日：2002-01-08
申请号：US09843786
申请日：2001-04-30
申请人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
发明人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J2237/3045 , H01J2237/30455 , H01J2237/3175
摘要： An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.
摘要翻译：一种高产量的电子束拉制工艺，能够应对下层曝光装置或光学还原曝光装置的静态失真和动态变形的变化。对于预定数量的芯片，检测在晶片上形成的每个芯片中形成的至少两个标记，并且根据检测到的标记和晶片坐标的位置确定晶片平面中每个芯片的形状失真与晶片坐标之间的关系通过统计处理设计标记的位置。通过使用确定的芯片形状失真和晶片坐标之间的关系来校正在各个芯片上绘制的图案，在所有芯片中绘制图案。因此，无需任何手动调整，可以以高产量和高精度实现与较低层的重叠曝光。

5. 发明授权

US5972772A Electron beam drawing process 失效
标题翻译：电子束拉制工艺
公开(公告)号：US5972772A
公开(公告)日：1999-10-26
申请号：US922334
申请日：1997-09-03
申请人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
发明人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
IPC分类号： G03F9/00 , G03F7/20 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01L21/76
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2061 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J2237/3045 , H01J2237/30455 , H01J2237/3175
摘要： An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.
摘要翻译：一种高产量的电子束拉制工艺，能够应对下层曝光装置或光学还原曝光装置的静态失真和动态变形的变化。对于预定数量的芯片，检测在晶片上形成的每个芯片中形成的至少两个标记，并且根据检测到的标记和晶片坐标的位置确定晶片平面中每个芯片的形状失真与晶片坐标之间的关系通过统计处理设计标记的位置。通过使用确定的芯片形状失真和晶片坐标之间的关系来校正在各个芯片上绘制的图案，在所有芯片中绘制图案。因此，无需任何手动调整，可以以高产量和高精度实现与较低层的重叠曝光。

6. 发明授权

US06246064B1 Electron beam drawing apparatus 失效
标题翻译：电子束描绘装置
公开(公告)号：US06246064B1
公开(公告)日：2001-06-12
申请号：US09605879
申请日：2000-06-29
申请人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
发明人： Minoru Sasaki , Yuji Tange , Yutaka Hojyo , Kazuyoshi Oonuki , Hiroyuki Itoh
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J2237/3045 , H01J2237/30455 , H01J2237/3175
摘要： An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be with a high throughput and with a high accuracy without any manual adjustment.
摘要翻译：一种高产量的电子束拉制工艺，能够应对下层曝光装置或光学还原曝光装置的静态失真和动态变形的变化。对于预定数量的芯片，检测在晶片上形成的每个芯片中形成的至少两个标记，并且根据检测到的标记和晶片坐标的位置确定晶片平面中每个芯片的形状失真与晶片坐标之间的关系通过统计处理设计标记的位置。通过使用确定的芯片形状失真和晶片坐标之间的关系来校正在各个芯片上绘制的图案，在所有芯片中绘制图案。结果，与下层的重叠曝光可以具有高产量和高精度而无需任何手动调节。

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