会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • POLISHING COMPOSITION
    • 抛光组合物
    • US20070167116A1
    • 2007-07-19
    • US11692619
    • 2007-03-28
    • Hiroyuki YOSHIDAYuichi HommaShigeaki TakashimaToshiya Hagihara
    • Hiroyuki YOSHIDAYuichi HommaShigeaki TakashimaToshiya Hagihara
    • B24D3/02B24B7/30
    • C09G1/02B24B37/044C09K3/1436C09K3/1463
    • The present invention relates to a polishing composition containing an aqueous medium and silica particles, wherein the silica particles in the polishing composition has a zeta potential of from −15 to 40 mV; a method for manufacturing a substrate including the step of polishing a substrate to be polished with a polishing composition containing an aqueous medium and silica particles, wherein the silica particles in the polishing composition has a zeta potential of from −15 to 40 mV; and a method for reducing scratches on a substrate to be polished with a polishing composition containing an aqueous medium and silica particles, including the step of adjusting a zeta potential of silica particles in the polishing composition to −15 to 40 mV. The polishing composition can be favorably used in polishing the substrate for precision parts, including substrates for magnetic recording media such as magnetic discs, optical discs and opto-magnetic discs; photomask substrates; optical lenses; optical mirrors; optical prisms; semiconductor substrates; and the like.
    • 本发明涉及含有水性介质和二氧化硅颗粒的抛光组合物,其中抛光组合物中的二氧化硅颗粒的ζ电位为-15至40mV; 一种基板的制造方法,其特征在于,包括使用含有水性介质和二氧化硅粒子的研磨用组合物研磨待研磨基板的工序,其中,研磨用组合物中的二氧化硅粒子的ζ电位为-15〜40mV, 以及包括将研磨用组合物中的二氧化硅粒子的ζ电位调整为-15〜40mV的步骤的减少含有水性介质和二氧化硅粒子的研磨用组合物的研磨用基板上的划痕的方法。 抛光组合物可以有利地用于抛光用于精密部件的基板,包括用于诸如磁盘,光盘和光磁盘的磁记录介质的基板; 光掩模基板; 光学镜片; 光学镜; 光学棱镜 半导体衬底; 等等。