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1. 发明授权

US06299682B1 Method for producing silicon ingot having directional solidification structure and apparatus for producing the same 有权
标题翻译：具有定向凝固结构的硅锭的制造方法及其制造方法
公开(公告)号：US06299682B1
公开(公告)日：2001-10-09
申请号：US09658488
申请日：2000-09-08
申请人： Saburo Wakita , Akira Mitsuhashi , Yoshinobu Nakada , Jun-ichi Sasaki , Yuhji Ishiwari
发明人： Saburo Wakita , Akira Mitsuhashi , Yoshinobu Nakada , Jun-ichi Sasaki , Yuhji Ishiwari
IPC分类号： C30B1314
CPC分类号： C30B29/06 , C30B11/003 , Y10S164/06
摘要： A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.
摘要翻译：一种制造具有定向凝固结构的硅锭的方法，包括以下步骤：将硅原料放入通过将冷却板安装在地板下加热器上构成的熔化装置的坩埚中，安装具有大横截面积的坩埚在冷却板上，在坩埚上方提供顶部加热器，并用绝热体围绕坩埚的周边; 通过使电流流过地板加热器和塔顶加热器来热熔硅原料; 在硅原料完全熔化之后，通过停止通过地板下加热器的电流来冷却坩埚的底部以形成熔融硅; 通过使惰性气体流过冷却板来冷却坩埚的底部; 以及通过间歇地或连续地减少通过塔顶加热器的电流来间歇地或连续地降低塔顶加热器的温度，以及用于生产硅锭的装置。

2. 发明授权

US06378835B1 Method for producing silicon ingot having directional solidification structure and apparatus for producing the same 有权
标题翻译：具有定向凝固结构的硅锭的制造方法及其制造方法
公开(公告)号：US06378835B1
公开(公告)日：2002-04-30
申请号：US09257037
申请日：1999-02-25
申请人： Saburo Wakita , Akira Mitsuhashi , Yoshinobu Nakada , Jun-ichi Sasaki , Yuhji Ishiwari
发明人： Saburo Wakita , Akira Mitsuhashi , Yoshinobu Nakada , Jun-ichi Sasaki , Yuhji Ishiwari
IPC分类号： B22D900
CPC分类号： C30B29/06 , C30B11/003 , Y10S164/06
摘要： A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.
摘要翻译：一种制造具有定向凝固结构的硅锭的方法，包括以下步骤：将硅原料放入通过将冷却板安装在地板下加热器上构成的熔化装置的坩埚中，安装具有大横截面积的坩埚在冷却板上，在坩埚上方提供顶部加热器，并用绝热体围绕坩埚的周边; 通过使电流流过地板加热器和塔顶加热器来热熔硅原料; 在硅原料完全熔化之后，通过停止通过地板下加热器的电流来冷却坩埚的底部以形成熔融硅; 通过使惰性气体流过冷却板来冷却坩埚的底部; 以及通过间歇地或连续地减少通过塔顶加热器的电流来间歇地或连续地降低塔顶加热器的温度，以及用于生产硅锭的装置。

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