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1. 发明申请

US20120299222A1 METHOD AND DEVICE FOR FULL WAFER NANOIMPRINT LITHOGRAPHY 有权
标题翻译：用于全波段纳米压印的方法和装置
公开(公告)号：US20120299222A1
公开(公告)日：2012-11-29
申请号：US13521811
申请日：2011-05-23
申请人： Hongbo Lan , Yucheng Ding
发明人： Hongbo Lan , Yucheng Ding
IPC分类号： B29C35/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present application relates to a full wafer nanoimprint lithography device comprises a wafer stage, a full wafer coated with a liquid resist, a demolding nozzle, a composite mold, an imprint head, a pressure passageway, a vacuum passageway and a UV light source. The present application also relates to an imprinting method using the full wafer nanoimprint lithography device comprises the following steps: 1) a pretreatment process; 2) an imprinting process; 3) a curing process; and 4) a demolding process. The device and the method can be used for high volume manufacturing photonic crystal LEDs, nano patterned sapphire substrates and the like in large scale patterning on the non-planar surface or substrate.
摘要翻译：本申请涉及全晶片纳米压印光刻设备，其包括晶片台，涂有液体抗蚀剂的全晶片，脱模喷嘴，复合模具，压印头，压力通道，真空通道和UV光源。本申请还涉及使用全晶片纳米压印光刻装置的印记方法，包括以下步骤：1）预处理工艺; 2）印记过程; 3）固化过程; 和4）脱模过程。该器件和方法可用于在非平面表面或衬底上大规模图案化的大量制造光子晶体LED，纳米图案化蓝宝石衬底等。

2. 发明授权

US08741199B2 Method and device for full wafer nanoimprint lithography 有权
标题翻译：全晶圆纳米压印光刻的方法和装置
公开(公告)号：US08741199B2
公开(公告)日：2014-06-03
申请号：US13521811
申请日：2011-05-23
申请人： Hongbo Lan , Yucheng Ding
发明人： Hongbo Lan , Yucheng Ding
IPC分类号： B29C33/46
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present application relates to a full wafer nanoimprint lithography device comprises a wafer stage, a full wafer coated with a liquid resist, a demolding nozzle, a composite mold, an imprint head, a pressure passageway, a vacuum passageway and a UV light source. The present application also relates to an imprinting method using the full wafer nanoimprint lithography device comprises the following steps: 1) a pretreatment process; 2) an imprinting process; 3) a curing process; and 4) a demolding process. The device and the method can be used for high volume manufacturing photonic crystal LEDs, nano patterned sapphire substrates and the like in large scale patterning on the non-planar surface or substrate.
摘要翻译：本申请涉及全晶片纳米压印光刻设备，其包括晶片台，涂有液体抗蚀剂的全晶片，脱模喷嘴，复合模具，压印头，压力通道，真空通道和UV光源。本申请还涉及使用全晶片纳米压印光刻装置的印记方法，包括以下步骤：1）预处理工艺; 2）印记过程; 3）固化过程; 和4）脱模过程。该器件和方法可用于在非平面表面或衬底上大规模图案化的大量制造光子晶体LED，纳米图案化蓝宝石衬底等。

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