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1. 发明授权

US06787441B1 Method for pretreating a polymer substrate using an ion beam for subsequent deposition of indium oxide or indium tin oxide 失效
标题翻译：使用离子束预处理聚合物衬底以后续沉积氧化铟或氧化铟锡的方法
公开(公告)号：US06787441B1
公开(公告)日：2004-09-07
申请号：US10182986
申请日：2002-11-13
申请人： Seok-Keun Koh , Young-Whoan Beag , Jun-Sik Cho , Young-Gun Han
发明人： Seok-Keun Koh , Young-Whoan Beag , Jun-Sik Cho , Young-Gun Han
IPC分类号： H01L2144
CPC分类号： C23C14/022 , C23C14/086 , C23C14/22
摘要： A method of depositing indium oxide or indium tin oxide thin film on a polymer substrate is disclosed. In the method, oxygen or argon ion beam is radiated on a polymer substrate by a constant accelerating energy in a vacuum state to modify the surface of the polymer substrate, on which an IO thin film or an ITO thin film is deposited while oxygen ion beam, argon ion beam or their mixture ion beam is being radiated in a vacuum state. In addition, ion beam is generated from a cold cathode ion source by using argon, oxygen or their mixture gas and sputtered at a target substance composed of In2O3 or In2O3 and SnO2, thereby an IO or an ITO thin film can be deposited on the surface-modified polymer substrate.
摘要翻译：公开了一种在聚合物基底上沉积氧化铟或氧化铟锡薄膜的方法。在该方法中，氧气或氩离子束在真空状态下通过恒定的加速能量辐射在聚合物衬底上，以改变聚合物衬底的表面，其上沉积有IO薄膜或ITO薄膜，而氧离子束氩离子束或其混合离子束在真空状态下被辐射。此外，通过使用氩，氧或它们的混合气体从冷阴极离子源产生离子束并溅射在由In 2 O 3或In 2 O 3和SnO 2组成的目标物质上，从而可以在表面上沉积IO或ITO薄膜改性聚合物基材。

2. 发明授权

US07309405B2 Method of forming ITO film 失效
标题翻译： ITO膜形成方法
公开(公告)号：US07309405B2
公开(公告)日：2007-12-18
申请号：US10751972
申请日：2004-01-07
申请人： Jun-Sik Cho , Young-Gun Han , Young-Whoan Beag , Seok-Keun Koh
发明人： Jun-Sik Cho , Young-Gun Han , Young-Whoan Beag , Seok-Keun Koh
IPC分类号： C23C14/35
CPC分类号： C23C14/3492 , C23C14/086 , C23C14/46 , H01L51/0021 , H01L2251/308
摘要： Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.
摘要翻译：公开了通过优化具有不同溅射工艺条件的溅射工艺条件的种子和体层的顺序溅射沉积来形成ITO膜的方法，其适用于各种显示装置，更具体地说，涉及需要超平面化表面的有机发光装置粗糙度在透明基板上形成透明导电电极的ITO膜包括种子层和体层之后，形成ITO膜的方法包括：第一溅射沉积步骤，用溅射法在衬底上形成ITO膜以在衬底附近流动的氧的气氛供给到离子源的气体以及仅供给到离子源的溅射气体形成ITO膜的第二溅射沉积步骤，其中第一和第二溅射沉积步骤具有不同的工艺条件，并且其中种子和体层通过第一或第二溅射沉积步骤沉积。

3. 发明申请

US20080254219A1 Method And Device For Preparing Powder On Which Nano Metal, Alloy, And Ceramic Particles Are Uniformly Vacuum-Deposited 审中-公开
标题翻译：制备纳米金属，合金和陶瓷颗粒均匀真空沉积的粉末的方法和装置
公开(公告)号：US20080254219A1
公开(公告)日：2008-10-16
申请号：US12067901
申请日：2006-10-16
申请人： Seok Keun Koh , Young Whoan Beag , Jun Sik Cho , Jae Ho Joo , Young Gun Han , Jung Hwan Lee , Un Jung Yo
发明人： Seok Keun Koh , Young Whoan Beag , Jun Sik Cho , Jae Ho Joo , Young Gun Han , Jung Hwan Lee , Un Jung Yo
IPC分类号： C23C16/44
CPC分类号： B22F9/14 , B01J21/08 , B01J23/06 , B01J23/10 , B01J23/22 , B01J23/30 , B01J23/34 , B01J23/42 , B01J23/44 , B01J23/462 , B01J23/52 , B01J23/755 , B01J35/0013 , B01J37/0221 , B22F1/0018 , B22F2998/00 , B22F2998/10 , B82Y30/00 , C02F1/281 , C02F1/283 , C02F1/288 , C02F1/50 , C04B35/6281 , C04B35/62815 , C04B35/62842 , C04B35/62884 , C04B35/62892 , C04B2235/3217 , C04B2235/3232 , C04B2235/3244 , C04B2235/3272 , C04B2235/3418 , C23C14/223 , C23C16/4417 , B22F2201/11 , B22F2201/20 , B22F1/007 , B22F2202/01
摘要： The present invention relates to a method and device for preparing powder by depositing nano metal, alloy, ceramic particles that are excellent in size uniformity, on a surface of the powder that is a base, using a vacuum deposition method. In particular, the present invention provides a method and device for preparing the powder on which the nano metal, alloy, and ceramic particles of a very uniform size are deposited, by simultaneously performing deposition and agitation using an effective agitation means for solving a disadvantage of a conventional method where deposition and agitation are separately performed. Also, the present invention provides a method and device for preparing the powder on which nano particles are deposited, in which a nano characteristic is kept by preventing a coalescence phenomenon of nano particles even when a deposition time for increasing contents of the nano particles increases in their preparation.
摘要翻译：本发明涉及一种使用真空沉积法在基体粉末的表面上沉积尺寸均匀性优良的纳米金属，合金，陶瓷颗粒来制备粉末的方法和装置。特别地，本发明提供了一种制备粉末的方法和装置，其上沉积了非常均匀尺寸的纳米金属，合金和陶瓷颗粒，通过使用有效的搅拌装置同时进行沉积和搅拌来解决缺点分别进行沉积和搅拌的常规方法。此外，本发明提供一种制备其上沉积有纳米颗粒的粉末的方法和装置，其中通过防止纳米颗粒的聚结现象即使在增加纳米颗粒的含量的沉积时间增加时也保持纳米特性他们的准备。

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