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1. 发明授权

US09099639B2 Resistance switching material element and device employing the same 有权
标题翻译：电阻切换材料元件及其使用方法
公开(公告)号：US09099639B2
公开(公告)日：2015-08-04
申请号：US13962470
申请日：2013-08-08
申请人： Kyung-min Kim , Young-bae Kim , Chang-jung Kim , Sung-ho Kim , Sae-jin Kim , Seung-ryul Lee , Man Chang , Eun-ju Cho
发明人： Kyung-min Kim , Young-bae Kim , Chang-jung Kim , Sung-ho Kim , Sae-jin Kim , Seung-ryul Lee , Man Chang , Eun-ju Cho
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/145
摘要： According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.
摘要翻译：根据示例实施例，电阻切换材料元件包括在第一电极和第二电极之间的电阻切换材料层，以及设置在电阻切换材料层和第一和第二电极中的一个之间的自整流层。第二电极可以在第一电极上。

2. 发明授权

US09048839B2 2-terminal switching device 有权
标题翻译： 2端子开关装置
公开(公告)号：US09048839B2
公开(公告)日：2015-06-02
申请号：US13905706
申请日：2013-05-30
申请人： Kyung-min Kim , Young-bae Kim , Eun-ju Cho
发明人： Kyung-min Kim , Young-bae Kim , Eun-ju Cho
IPC分类号： G11C11/00 , H03K17/70
CPC分类号： H03K17/70
摘要： A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential.
摘要翻译：两端开关器件包括电阻开关元件，二极管和电阻电路。电阻式开关元件基于开关信号在低电阻状态和高电阻状态之间切换，并保持开关电阻状态，直到接收到另一个开关信号。二极管连接到电阻开关元件，并阻止开关信号传输到输出端子。电阻电路允许二极管阻塞的开关信号流向参考电位。

3. 发明申请

US20150117090A1 THREE-TERMINAL SYNAPSE DEVICE AND METHOD OF OPERATING THE SAME 有权
标题翻译：三端触发装置及其操作方法
公开(公告)号：US20150117090A1
公开(公告)日：2015-04-30
申请号：US14328300
申请日：2014-07-10
申请人： Young-bae KIM , Hyun-sang HWANG
发明人： Young-bae KIM , Hyun-sang HWANG
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： H01L45/1206 , G11C13/0011 , G11C13/0069 , G11C2013/0071 , G11C2013/0083 , G11C2213/32 , G11C2213/52 , G11C2213/53 , H01L27/249 , H01L45/085 , H01L45/1226 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A three-terminal synapse device may include a drain layer formed on a substrate, a gate layer formed on the drain layer, a source layer vertically stacked on the substrate and facing the drain layer and the gate layer. First and second vertical insulating layers may be formed between the source layer and a stack including the drain layer and the gate layer. The first and second vertical insulating layers have different ion mobilities from each other. The first and second vertical insulating layers may cover side surfaces of the drain layer and the gate layer. The ion mobility of the second vertical insulating layer may be greater than that of the first vertical insulating layer.
摘要翻译：三端突触装置可以包括形成在衬底上的漏极层，形成在漏极层上的栅极层，垂直堆叠在衬底上并面向漏极层和栅极层的源极层。第一和第二垂直绝缘层可以形成在源极层和包括漏极层和栅极层的堆叠之间。第一和第二垂直绝缘层具有彼此不同的离子迁移率。第一和第二垂直绝缘层可以覆盖漏极层和栅极层的侧表面。第二垂直绝缘层的离子迁移率可以大于第一垂直绝缘层的离子迁移率。

4. 发明授权

US08947905B2 Nonvolatile memory devices and methods of driving the same 有权
标题翻译：非易失性存储器件及其驱动方法
公开(公告)号：US08947905B2
公开(公告)日：2015-02-03
申请号：US13523429
申请日：2012-06-14
申请人： Man Chang , Young-bae Kim , Dong-soo Lee , Chang-bum Lee , Seung-ryul Lee , Chang-jung Kim , Myoung-jae Lee , Kyung-min Kim
发明人： Man Chang , Young-bae Kim , Dong-soo Lee , Chang-bum Lee , Seung-ryul Lee , Chang-jung Kim , Myoung-jae Lee , Kyung-min Kim
IPC分类号： G11C11/00 , G11C11/56 , G11C13/00
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/0064 , G11C13/0069
摘要： A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.
摘要翻译：一种驱动非易失性存储器件的方法，包括：将复位电压施加到单元存储单元，读取单元存储单元的复位电流，确认复位电流是否在第一电流范围内，如果复位电流不在第一电流范围内电流范围，如果复位电流在第一电流范围内，则改变复位电压并施加改变的复位电压或再次将施加设定电压的复位电压施加到单元存储单元，在当前复位电流和紧接在前的设定电流之间的电流在第二电流范围内，并且如果该差值不在第二电流范围内，则在应用组合之后施加复位电压或再次施加复位电压到单元存储单元电压到单元存储单元。

5. 发明授权

US08772750B2 Non-volatile memory elements and memory devices including the same 有权
标题翻译：非易失性存储器元件和包括其的存储器件
公开(公告)号：US08772750B2
公开(公告)日：2014-07-08
申请号：US13115549
申请日：2011-05-25
申请人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
发明人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
IPC分类号： H01L47/00 , H01L29/06
CPC分类号： H01L27/2409 , G11C13/0007 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.
摘要翻译：非易失性存储元件包括：设置在第一电极和第二电极之间的存储层; 以及设置在所述存储层和所述第一电极之间的缓冲层。存储层包括第一材料层和第二材料层。第一材料层和第二材料层被配置为交换离子物质以改变存储层的电阻状态。

6. 发明授权

US08716766B2 Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device 有权
标题翻译：石墨烯半导体器件及其制造方法，有机发光显示器和包括石墨烯半导体器件的存储器
公开(公告)号：US08716766B2
公开(公告)日：2014-05-06
申请号：US13523554
申请日：2012-06-14
申请人： Chang-seung Lee , Young Bae Kim , Young Jun Yun , Yong Sung Kim , David Seo , Joo-ho Lee
发明人： Chang-seung Lee , Young Bae Kim , Young Jun Yun , Yong Sung Kim , David Seo , Joo-ho Lee
IPC分类号： H01L29/76
CPC分类号： H01L29/7391 , B82Y10/00 , B82Y40/00 , H01L27/2445 , H01L27/283 , H01L27/3262 , H01L29/1606 , H01L29/6603 , H01L29/66037 , H01L29/7781 , H01L29/861 , H01L33/34 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/14 , H01L45/144 , H01L45/146 , H01L45/147
摘要： Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate.
摘要翻译：石墨烯半导体器件，石墨烯半导体器件的制造方法，有机发光显示器和存储器，包括形成包括依次沉积的牺牲基板，牺牲层和半导体层的多层元件，在其上形成转印衬底半导体层，通过去除所述牺牲层以形成包含所述转移衬底和所述半导体层的第一层压体，以将所述牺牲衬底与所述半导体层分离，通过在基底衬底上形成石墨烯层而形成第二层压体，将所述第一层压体和第二层压体，使得半导体层接触石墨烯层，并且去除转移基板。

7. 发明申请

US20130058153A1 SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE ELEMENTS AND METHODS OF OPERATING SEMICONDUCTOR DEVICES 有权
标题翻译：包括可变电阻元件的半导体器件和操作半导体器件的方法
公开(公告)号：US20130058153A1
公开(公告)日：2013-03-07
申请号：US13488869
申请日：2012-06-05
申请人： Man Chang , Young-bae Kim , Dong-soo Lee , Chang-bum Lee , Seung-ryul Lee , Chang-jung Kim , Myoung-jae Lee , Kyung-min Kim
发明人： Man Chang , Young-bae Kim , Dong-soo Lee , Chang-bum Lee , Seung-ryul Lee , Chang-jung Kim , Myoung-jae Lee , Kyung-min Kim
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5685 , G11C13/0007 , G11C13/0033 , G11C2013/0076 , G11C2013/009 , G11C2013/0092 , G11C2211/5625 , G11C2213/31 , G11C2213/32
摘要： In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current.
摘要翻译：在操作半导体器件的方法中，通过向可变电阻元件施加第一电压，可变电阻元件的电阻值从第一电阻值改变为第二电阻值; 并且感测流过可变电阻元件的第一电流。基于第一电流的偏差来调制用于将可变电阻元件的电阻值从第二电阻值改变为第一电阻值的第二电压，并且基于第一电压将第一电压重新施加到可变电阻元件第一电流的分散。

8. 发明授权

US08246790B2 Method for collecting (meth)acrylic acid and apparatus for collecting (meth)acrylic acid 有权
标题翻译：收集（甲基）丙烯酸的方法和收集（甲基）丙烯酸的装置
公开(公告)号：US08246790B2
公开(公告)日：2012-08-21
申请号：US12739113
申请日：2008-10-23
申请人： Se-Won Baek , Kyoung-Su Ha , Sung-Kyoo Park , Jun-Seok Ko , Dong-Hyun Woo , Young-Bae Kim , Jung-Hoon Chang
发明人： Se-Won Baek , Kyoung-Su Ha , Sung-Kyoo Park , Jun-Seok Ko , Dong-Hyun Woo , Young-Bae Kim , Jung-Hoon Chang
IPC分类号： C07C51/42
CPC分类号： C07C51/42 , C07C57/04
摘要： The present invention provides a (meth)acrylic acid collecting method for collecting a (meth)acrylic acid from a mixed gas that includes an organic byproduct, a steam, and a (meth)acrylic acid that are generated in a production reaction of the (meth)acrylic acid, which includes the steps of a) contacting the mixed gas that includes the organic byproduct, the steam, and the (meth)acrylic acid with a (meth)acrylic acid absorption solvent to obtain a gas that includes the organic byproduct and the steam and the (meth)acrylic acid containing solution while the gas and the (meth)acrylic acid containing solution are separated from each other; b) contacting the gas that includes the organic byproduct and the steam that are obtained in the step a with the organic byproduct absorption solvent to obtain the gas that includes the steam and the organic byproduct containing solution while the gas and the organic byproduct containing solution are separated from each other; c) supplying the gas that includes the steam that is obtained in the step b into the production reaction of the (meth)acrylic acid; and d) obtaining the (meth)acrylic acid from the (meth)acrylic acid containing solution that is obtained in the step a while the (meth)acrylic acid and the (meth)acrylic acid containing solution are separated from each other, and a (meth)acrylic acid collecting device.
摘要翻译：本发明提供一种（甲基）丙烯酸收集方法，用于从包含有机副产物，蒸汽和（甲基）丙烯酸的混合气体中收集（甲基）丙烯酸，所述有机副产物，蒸汽和（甲基）丙烯酸在（甲基）丙烯酸，其包括以下步骤：a）使包含有机副产物，蒸汽和（甲基）丙烯酸的混合气体与（甲基）丙烯酸吸收溶剂接触以获得包含有机副产物的气体和蒸汽和（甲基）丙烯酸溶液，同时气体和（甲基）丙烯酸溶液彼此分离; b）将包含有机副产物的气体和步骤a中获得的蒸汽与有机副产物吸收溶剂接触，以获得包含蒸汽和含有机副产物的溶液的气体，同时气体和含有机副产物的溶液为相互分离 c）将包含步骤b中获得的蒸汽的气体供应到（甲基）丙烯酸的生产反应中; 和d）在（甲基）丙烯酸和（甲基）丙烯酸的溶液相互分离的同时，从步骤a得到的（甲基）丙烯酸溶液得到（甲基）丙烯酸，（甲基）丙烯酸收集装置。

9. 发明申请

US20120161821A1 VARIABLE RESISTANCE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE 有权
标题翻译：可变电阻器件，包括可变电阻器件的半导体器件，以及操作半导体器件的方法
公开(公告)号：US20120161821A1
公开(公告)日：2012-06-28
申请号：US13313720
申请日：2011-12-07
申请人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
发明人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
IPC分类号： H03B1/00 , H01C7/10
CPC分类号： G11C13/0069 , G11C11/5685 , G11C13/0064 , G11C2013/0073
摘要： A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.
摘要翻译：一种操作包括可变电阻器件的半导体器件的方法，所述方法包括向可变电阻器件施加第一电压以便将可变电阻器件的电阻值从第一电阻值改变为第二电阻值，该第二电阻值是不同于第一个电阻值; 感测流过施加有第一电压的可变电阻装置的第一电流; 确定第一电流是否落在预定的电流范围内; 并且如果所述第一电流不在所述第一电流范围内，则向所述可变电阻装置施加等于所述第一电压的附加第一电压。

10. 发明申请

US20120049145A1 Non-Volatile Memory Elements And Memory Devices Including The Same 有权
标题翻译：非易失性存储器元件和包括其的存储器件
公开(公告)号：US20120049145A1
公开(公告)日：2012-03-01
申请号：US13115549
申请日：2011-05-25
申请人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
发明人： Chang-bum Lee , Chang-jung Kim , Young-bae Kim , Myoung-jae Lee , Ji-hyun Hur , Dong-soo Lee , Man Chang , Seung-ryul Lee
IPC分类号： H01L45/00
CPC分类号： H01L27/2409 , G11C13/0007 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.
摘要翻译：非易失性存储元件包括：设置在第一电极和第二电极之间的存储层; 以及设置在所述存储层和所述第一电极之间的缓冲层。存储层包括第一材料层和第二材料层。第一材料层和第二材料层被配置为交换离子物质以改变存储层的电阻状态。

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