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    • 3. 发明授权
    • Liquid crystal display having a reflective electrode formed on an organic resin film
    • 具有形成在有机树脂膜上的反射电极的液晶显示器
    • US07692740B2
    • 2010-04-06
    • US11064463
    • 2005-02-23
    • Seiji DoiTetsuya FujikawaNaoshige ItamiYoshinori TanakaAtsuyuki HoshinoYoshio Kurosawa
    • Seiji DoiTetsuya FujikawaNaoshige ItamiYoshinori TanakaAtsuyuki HoshinoYoshio Kurosawa
    • G02F1/1335G02F1/1345
    • G02F1/1362G02F1/133553
    • The invention relates to a substrate for a liquid crystal display used in a display section of an information apparatus, a liquid crystal display having the same, and a method of manufacturing the same. There is provided a substrate for a liquid crystal display which achieves good display quality with reduced manufacturing steps, a liquid crystal display having the same, and a method of manufacturing the same. TFTs are formed on a glass substrate. A protective film is formed on the TFTs, and a resist pattern is formed on the protective film, the resist pattern having openings located above source electrodes, gate bus line terminals, and drain bus line terminals. The resist pattern is baked at a baking temperature of 200 (or more after irradiating the surface thereof with ultraviolet light to form a wrinkled resin layer having a wrinkled surface. The protective film and an insulation film are etched using the wrinkled resin layer as an etching mask to form reflective electrodes and protective conductive films on the wrinkled resin layer.
    • 本发明涉及用于信息装置的显示部分的液晶显示器用基板,具有该液晶显示器的液晶显示器及其制造方法。 提供了一种用于液晶显示器的基板,其通过降低的制造步骤实现了良好的显示质量,具有该液晶显示器的液晶显示器及其制造方法。 TFT形成在玻璃基板上。 在TFT上形成保护膜,在保护膜上形成抗蚀剂图案,抗蚀剂图案具有位于源电极上方的开口,栅极总线端子和漏极总线端子。 抗蚀剂图案在200℃的烘烤温度下烘烤(在用紫外线照射其表面之后,以形成起皱表面的起皱树脂层以上进行烘烤,使用起皱树脂层作为蚀刻来对保护膜和绝缘膜进行蚀刻 掩模在起皱树脂层上形成反射电极和保护性导电膜。
    • 4. 发明授权
    • Rolled copper foil for flexible printed circuit and method of manufacturing the same
    • 用于柔性印刷电路的轧制铜箔及其制造方法
    • US06372061B1
    • 2002-04-16
    • US09431910
    • 1999-11-02
    • Takaaki HatanoYoshio Kurosawa
    • Takaaki HatanoYoshio Kurosawa
    • C22C900
    • B21B3/00B21B2003/005C22C9/00C22F1/08H05K1/0393H05K1/09H05K2201/0355H05K2203/0278Y10S428/901
    • A rolled copper foil for flexible printed circuits comprising, all by weight, from 0.0100 to 0.0400% of Ag, from 0.0100 to 0.0500% of oxygen, not more than 0.0030% in total of one or more elements selected from the group consisting of S, As, Sb, Bi, Se, Te, Pb, and Sn, and the balance copper, the foil having a thickness in the range of 5 to 50 &mgr;m, a half-softening temperature of 120 to 150° C., being capable of retaining a tensile strength of at least 300 N/mm2 at 30° C., and possessing excellent flex fatigue property and adequate softening property. The intensity (I) of the (200) plane determined by X-ray diffraction of the rolled surface after annealing at 200° C. for 30 minutes is I/Io>20 with respect to the X-ray diffraction intensity (Io) of the (200) plane of fine copper powder. A method of manufacturing the rolled copper foil by a process which comprises hot rolling an ingot, repeating cold rolling and annealing alternately, and finally cold rolling the work to a foil, the annealing immediately preceding the final cold rolling being performed under conditions that enable the annealed recrystallized grains to have a mean grain diameter of not greater than 20 &mgr;m, the reduction ratio of the final cold rolling being beyond 90.0%, whereby excellent flex fatigue property and adequate softening property are achieved.
    • 一种用于柔性印刷电路的卷绕铜箔,包括全部重量,0.0100至0.0400%的Ag,0.0100至0.0500%的氧,不超过0.0030%的一种或多种选自S, As,Sb,Bi,Se,Te,Pb和Sn,余量为铜,箔的厚度在5〜50μm的范围内,半软化温度为120〜150℃,能够 在30℃保持至少300N / mm2的拉伸强度,具有优异的挠曲疲劳性能和足够的软化性能。 通过在200℃下退火30分钟后的轧制表面的X射线衍射测定的(200)面的强度(I)相对于X射线衍射强度(Io)为I / Io> 20 (200)平面细铜粉。 通过包括热轧锭子,交替重复冷轧和退火的方法制造轧制铜箔的方法,最后将工件冷轧到箔片上,在最终冷轧之前的退火是在使得 退火后的再结晶晶粒的平均粒径不大于20μm,最终冷轧的压下率超过90.0%,由此获得优异的挠曲疲劳性能和足够的软化性能。
    • 6. 发明授权
    • Thin film transistor device and method of manufacturing the same
    • 薄膜晶体管器件及其制造方法
    • US07312483B2
    • 2007-12-25
    • US11352159
    • 2006-02-10
    • Yoshio Kurosawa
    • Yoshio Kurosawa
    • H01L21/00
    • H01L29/78696H01L27/12H01L29/66772
    • A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.
    • 半导体膜形成在基板上。 随后,在半导体膜上形成抗蚀剂膜,并使用抗蚀剂膜作为掩模对半导体膜进行干法蚀刻。 由于干蚀刻,半导体膜的边缘部分从抗蚀剂膜突出。 接下来,使用抗蚀剂膜作为掩模将p型杂质引入半导体膜的边缘部分。 半导体膜的通道边缘部分中的p型杂质的体积密度是通道中心部分中p型杂质的体积密度的2-5倍。 随后,除去抗蚀剂膜以形成栅极绝缘膜和栅电极。