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1. 发明授权

US09530729B2 Semiconductor devices including insulating extension patterns between adjacent landing pads and methods of fabricating the same 有权
公开(公告)号：US09530729B2
公开(公告)日：2016-12-27
申请号：US14859435
申请日：2015-09-21
申请人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
发明人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
IPC分类号： H01L23/522 , H01L23/528 , H01L27/108 , H01L27/02 , H01L21/768
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

2. 发明授权

US09165934B2 Semiconductor devices including insulating extension patterns between adjacent landing pads and methods of fabricating the same 有权
标题翻译：包括相邻着陆焊盘之间的绝缘延伸图案的半导体器件及其制造方法
公开(公告)号：US09165934B2
公开(公告)日：2015-10-20
申请号：US14445829
申请日：2014-07-29
申请人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
发明人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
IPC分类号： H01L27/108
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.
摘要翻译：半导体存储器件包括分别包括位线的多个图形结构和从衬底突出的侧壁上的绝缘间隔物。多个绝缘延伸图案设置在图案结构的相对的侧壁上，并且分别从相对的侧壁的上部沿着绝缘间隔件延伸到衬底，使得相对的侧壁的下部分没有扩展图案。在相邻图案结构的相对侧壁的下部之间的衬底上设置多个埋入接触图案。还讨论了相关的制造方法。

3. 发明申请

US20150061154A1 SEMICONDUCTOR DEVICES INCLUDING INSULATING EXTENSION PATTERNS BETWEEN ADJACENT LANDING PADS AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件，其中包括相邻接线垫之间的绝缘扩展图案及其制造方法
公开(公告)号：US20150061154A1
公开(公告)日：2015-03-05
申请号：US14445829
申请日：2014-07-29
申请人： Yong-Gyu Choi , Hyun-Chul Kim , Seung-hee Ko
发明人： Yong-Gyu Choi , Hyun-Chul Kim , Seung-hee Ko
IPC分类号： H01L23/522 , H01L23/528
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.
摘要翻译：半导体存储器件包括分别包括位线的多个图形结构和从衬底突出的侧壁上的绝缘间隔物。多个绝缘延伸图案设置在图案结构的相对的侧壁上，并且分别从相对的侧壁的上部沿着绝缘间隔件延伸到衬底，使得相对的侧壁的下部分没有扩展图案。在相邻图案结构的相对侧壁的下部之间的衬底上设置多个埋入接触图案。还讨论了相关的制造方法。

4. 发明授权

US06413891B1 Glass material suitable for a waveguide of an optical amplifier 失效
标题翻译：适用于光放大器波导的玻璃材料
公开(公告)号：US06413891B1
公开(公告)日：2002-07-02
申请号：US09689394
申请日：2000-10-11
申请人： Doo-Hee Cho , Yong-Gyu Choi , Kyong-Hon Kim
发明人： Doo-Hee Cho , Yong-Gyu Choi , Kyong-Hon Kim
IPC分类号： C03C312
CPC分类号： C03C13/048 , C03C3/122 , C03C3/253 , H01S3/177
摘要： Glasses of the present invention are tellurite and oxyhalide glasses doped with rare-earth ion, which can be applied to highly efficient optical amplifiers and lasers for optical communication. They are thermally and chemically stable during and after the fabrication processes of the optical fiber. The glass material includes 20˜70 mole % of TeO2, a heavy metal oxide, 0.001˜10 mole % of a rare earth ion dopant, 5˜30 mole % of MO, M being selected from a group consisting of Mg, Ca, Sr, Ba, Zn and Pb, and optionally 1˜20 mole % of R2O, R being selected from a group consisting of Li, Na, K, Rb and Cs. In the composition of the glass, 3˜18 mole % of MO and R2O may be substituted by the metal halides. The glasses of the present invention are similar in phonon energy to the conventional tellurite glasses not to increase the non-radiative transition rate. Further, the fluorescence lifetime is additionally increased in case of partial substitution of oxide to halide.
摘要翻译：本发明的玻璃是掺杂有稀土离子的碲酸盐和卤氧化物玻璃，其可以应用于用于光通信的高效光放大器和激光器。它们在光纤的制造过程中和之后是热和化学稳定的。玻璃材料包括20〜70摩尔％的TeO 2，重金属氧化物，0.001〜10摩尔％的稀土离子掺杂剂，5〜30摩尔％的MO，M选自Mg，Ca，Sr ，Ba，Zn和Pb，以及任选的1-20摩尔％的R 20，R选自Li，Na，K，Rb和Cs。在玻璃的组成中，3〜18摩尔％的MO和R2O可以被金属卤化物取代。本发明的玻璃在声子能量方面与常规的碲化物玻璃类似，不增加非辐射跃迁速率。此外，在将氧化物部分置换为卤化物的情况下，荧光寿命另外增加。

5. 发明授权

US06845185B2 High-speed wavelength channel selector and high-speed photonic integrated circuit-type space and wavelength multiplexed channel selector employing the same 有权
标题翻译：高速波长通道选择器和高速光子集成电路型空间以及使用其的波长多路复用通道选择器
公开(公告)号：US06845185B2
公开(公告)日：2005-01-18
申请号：US10123337
申请日：2002-04-15
申请人： Kyong Hon Kim , Joon Tae Ahn , Yong Gyu Choi , Doo-Hee Cho
发明人： Kyong Hon Kim , Joon Tae Ahn , Yong Gyu Choi , Doo-Hee Cho
IPC分类号： G02B6/293 , G02B6/34 , G02B6/35 , H04J14/02 , H04Q11/00 , G02B6/12
CPC分类号： G02B6/12004 , G02B6/12007 , G02B6/12021 , G02B6/356 , H04J14/02 , H04J14/0221 , H04Q11/0005 , H04Q2011/0011 , H04Q2011/0016 , H04Q2011/0024
摘要： A high-speed wavelength channel selector has properties of relatively easy manufacturing and easy extension to multi-channel integration, and a high-speed space and wavelength multiplexed channel selector uses the high-speed wavelength channel selector. The high-speed wavelength channel selector is integrated with electro-optic waveguide switches of non-crystalline materials, such as electro-optic polymers or glasses, in the middle of a pair of wavelength multiplexer and demultiplexer and the high-speed space and wavelength multiplexed channel selector has the photonic integrated circuit-type composition of a space multiplexed channel selector containing M electro-optic waveguide switches and an M×1 channel combiner, the high-speed wavelength channel selector, optical amplifier and a high-speed wavelength converter.
摘要翻译：高速波长通道选择器具有制造相对容易，易于扩展到多通道集成的特点，高速空间和波长复用通道选择器使用高速波长通道选择器。高速波长通道选择器与一对波长多路复用器和解复用器中间的非晶体材料如电光聚合物或眼镜的电光波导开关集成在一起，并且高速空间和波长多路复用通道选择器具有包含M个电光波导开关和Mx1通道组合器的空间复用通道选择器的光子集成电路型组合，高速波长通道选择器，光放大器和高速波长转换器。

6. 发明申请

US20160013131A1 SEMICONDUCTOR DEVICES INCLUDING INSULATING EXTENSION PATTERNS BETWEEN ADJACENT LANDING PADS AND METHODS OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20160013131A1
公开(公告)日：2016-01-14
申请号：US14859435
申请日：2015-09-21
申请人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
发明人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
IPC分类号： H01L23/522 , H01L23/528 , H01L27/02
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

7. 发明授权

US06625361B2 Method for forming two thin conductive films isolated electrically from each other on a fiber 失效
公开(公告)号：US06625361B2
公开(公告)日：2003-09-23
申请号：US10085371
申请日：2002-02-27
申请人： Sahng-gi Park , Jong-bae Kim , Doo-hee Cho , Yong-gyu Choi , Kyong-hon Kim , Bun Lee
发明人： Sahng-gi Park , Jong-bae Kim , Doo-hee Cho , Yong-gyu Choi , Kyong-hon Kim , Bun Lee
IPC分类号： G02B600
CPC分类号： G02F1/3558 , C03C25/1063 , C03C25/22 , C03C25/52 , G02B6/02 , G02B6/2826 , G02F1/0115
摘要： A method for forming two conductive films isolated electrically from each other on the surface of a fiber is provided. According to the method, a fiber is attached into the grooves on a silicon substrate using photoresist as glue. A photoresist pattern for a conductive film on the surface of the fiber is formed by a photolithography process. After wet-etching some amount of the fiber on the patterned area, which is needed for lifting off a metal film deposited on the unnecessary area, a metal film is deposited over whole area of the wafer. Removing photo-resist by a heated stripper solution leaves a metal film only on the patterned area of the fiber and detaches the fibers from the grooves of the wafer The second metal film on the other side of the fiber can be formed by the same procedures as the first metal film except that the deposited surface of the fiber must be attached to the grooves upside down. The poled fiber using two conductive films can be applied to manufacture elements used in opto-electronic and fiber communication devices such as a modulator, a tunable filter and a switch, an electric field sensor, and a nonlinear fiber optics device such as a frequency converter, a dispersion compensator.

8. 发明授权

US06538804B1 Planar waveguide-type optical amplifier switch 失效
标题翻译：平面波导型光放大器开关
公开(公告)号：US06538804B1
公开(公告)日：2003-03-25
申请号：US09433455
申请日：1999-11-04
申请人： Kyong Hon Kim , Yong Gyu Choi , Hak Kyu Lee , Min Yong Jeon , Joon Tae Ahn , Dong Sung Lim , Ho Young Kim , Do Il Chang
发明人： Kyong Hon Kim , Yong Gyu Choi , Hak Kyu Lee , Min Yong Jeon , Joon Tae Ahn , Dong Sung Lim , Ho Young Kim , Do Il Chang
IPC分类号： H01S300
CPC分类号： G02F1/3132 , G02F1/225 , H01S5/4068 , H01S5/50
摘要： A planar waveguide-type optical amplifier switch is disclosed. The switch is developed with the purpose of solving the problems that the conventional waveguide-type optical switch, which has been being used in the optical communication technique, has an optical loss and thereby requires an external optical amplifier which makes the whole devices not suitable for forming an integrated compact device. The disclosed switch performs switching function from the refractive index change in the optical waveguides induced by electrical or optical controls as well as amplifying function of the optical signal, when it passes through the waveguides, from use of optical waveguides formed of a fluorescence emitting material with an optical pumping and a wavelength division multiplexing (WDM) optical waveguide-type coupler. The optical amplifier switch scheme, which provides a simultaneous optical switching and amplification in an optical waveguide form, allows the device fabricable in a compact integrated manner and more useful in practical applications. The optical amplifier switch in accordance with the present invention can replace the conventional optical switches of the prior art, and can promote technical development in the areas of high-capacity optical communication systems, massive optical signal processing, optical switching, optical computing, and so on.
摘要翻译：公开了一种平面波导型光放大器开关。开关是为了解决在光通信技术中使用的常规波导型光开关具有光损耗并因此需要外部光放大器的问题而开发的，这使得整个器件不适合于形成集成的紧凑型装置。所公开的开关从通过电光或光控制引起的光波导中的折射率变化执行切换功能，以及当光信号通过波导时放大功能，使用由荧光发射材料形成的光波导与光泵浦和波分复用（WDM）光波导型耦合器。提供光波导形式的同时光切换和放大的光放大器开关方案允许该器件以紧凑的集成方式可制造并且在实际应用中更有用。根据本发明的光放大器开关可以代替现有技术的传统光开关，并且可以促进大容量光通信系统，大规模光信号处理，光交换，光计算等领域的技术发展。上。

9. 发明授权

US07279741B2 Semiconductor device with increased effective channel length and method of manufacturing the same 有权
标题翻译：具有增加有效通道长度的半导体器件及其制造方法
公开(公告)号：US07279741B2
公开(公告)日：2007-10-09
申请号：US10845688
申请日：2004-05-13
申请人： Chang-Hyun Cho , Soo-Ho Shin , Yong-Gyu Choi , Tae-Young Chung
发明人： Chang-Hyun Cho , Soo-Ho Shin , Yong-Gyu Choi , Tae-Young Chung
IPC分类号： H01L29/76
CPC分类号： H01L29/6659 , H01L21/823418 , H01L21/823468 , H01L29/6656
摘要： A semiconductor device with an increased effective channel length and a method of manufacturing the same. The device includes a semiconductor substrate, a gate insulating layer disposed on the semiconductor substrate, a gate electrode structure disposed on a predetermined portion of the gate insulating layer, an insulating layer for preventing short channel disposed on the surface of the resultant structure where the gate electrode structure is disposed, and a source region and a drain region disposed in the semiconductor substrate on either side of the gate electrode structure. Both the source region and the drain region are spaced apart from the gate electrode structure by the thickness of the insulating layer. The channel length of a MOS transistor can be thereby increased.
摘要翻译：具有增加的有效通道长度的半导体器件及其制造方法。该器件包括半导体衬底，设置在半导体衬底上的栅极绝缘层，设置在栅极绝缘层的预定部分上的栅极电极结构，用于防止短路通道的绝缘层，所述绝缘层设置在所述结构的表面上，电极结构，以及设置在栅电极结构的任一侧的半导体衬底中的源区和漏区。源极区域和漏极区域与栅电极结构隔开绝缘层的厚度。可以提高MOS晶体管的沟道长度。

10. 发明授权

US06916753B2 Tm3+-doped silicate glass and the use thereof 失效
标题翻译： Tm3 +掺杂的硅酸盐玻璃及其用途
公开(公告)号：US06916753B2
公开(公告)日：2005-07-12
申请号：US10331353
申请日：2002-12-31
申请人： Doo Hee Cho , Yong Gyu Choi , Hong Seok Seo , Bong Je Park
发明人： Doo Hee Cho , Yong Gyu Choi , Hong Seok Seo , Bong Je Park
IPC分类号： C03C3/112 , C03C3/06 , C03C3/11 , C03C4/00 , C03C13/04 , C03C4/12
CPC分类号： C03C3/11 , C03C3/06 , C03C4/0071 , C03C13/046
摘要： The present invention is a thulium doped silicate glass having an excellent fluorescent emission in the 1.4 μm band, and the usage thereof. The silicate glass of this invention includes: 65˜95 mol % SiO2; 0.5˜30 mol % bivalent metal oxide consisting of one or more material selected from ZnO, BaO, SrO and PbO; and 1˜15 mol % of SnO2 or TiO2, wherein 3˜30 mol % oxygen of the glass composition are replaced with fluorine, and 0.01˜1 mol % of thulium ions are doped, and the fluorescence lifetime of the 3H4 level of the Tm3+ is more than 50 μs. The silicate glass can be easily formed into a waveguide, such as optical fiber, and it has an excellent ability to splice with the optical fiber for transmission. They have excellent chemical durability and the characteristic of 1.4 μm band fluorescent emission by suppressing the non-radiative transition through multi-phonon relaxation. Thus they have long fluorescence lifetime of the 3H4 of Tm3+.
摘要翻译：本发明是在1.4mum带中具有优异的荧光发射的掺doped硅酸盐玻璃及其用途。本发明的硅酸盐玻璃包括：65〜95摩尔％的SiO 2; 由选自ZnO，BaO，SrO和PbO的一种或多种材料组成的0.5〜30mol％的二价金属氧化物; 和1〜15mol％的SnO 2或TiO 2，其中3〜30mol％的玻璃组合物的氧被氟代替，0.01〜1mol％的 ium离子被掺杂，并且Tm 3+ 3+的“3”4“4”水平的荧光寿命大于50微米。硅酸盐玻璃可以容易地形成诸如光纤的波导，并且具有极好的与光纤进行接合的传输能力。它们通过抑制通过多声子弛豫的非辐射跃迁具有优异的化学耐久性和1.4mum带荧光发射的特征。因此，它们具有Tm 3+ 3+的3 H 4 H 4的长荧光寿命。

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