专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08680569B2 Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device 有权
标题翻译：用于制造基于氧化镓的衬底的方法，发光器件以及用于制造发光器件的方法
公开(公告)号：US08680569B2
公开(公告)日：2014-03-25
申请号：US13355042
申请日：2012-01-20
申请人： Yong Tae Moon
发明人： Yong Tae Moon
IPC分类号： H01L33/00
CPC分类号： H01L21/02414 , H01L21/02458 , H01L21/02483 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
摘要翻译：发光器件包括基于氧化镓的衬底，氧化镓基衬底上的氮氧化镓基层，氮氧化硅基层上的第一导电型半导体层，第一导电型半导体层上的有源层，以及在有源层上的第二导电型半导体层。

2. 发明申请

US20130228746A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME 有权
标题翻译：发光装置，发光装置封装和包括其的照明系统
公开(公告)号：US20130228746A1
公开(公告)日：2013-09-05
申请号：US13850344
申请日：2013-03-26
申请人： Yong Tae MOON , Jeong Sik LEE , Dae Seob HAN
发明人： Yong Tae MOON , Jeong Sik LEE , Dae Seob HAN
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/06 , H01L33/08 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
摘要翻译：提供发光器件，发光器件封装和照明系统。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一和第二导电类型半导体层之间的有源层。有源层包括与第二导电类型半导体层相邻的第一有源层，与第一导电类型半导体层相邻的第二有源层和在第一和第二有源层之间的栅极量子势垒。

3. 发明授权

US08372727B2 Method for fabricating light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US08372727B2
公开(公告)日：2013-02-12
申请号：US13240965
申请日：2011-09-22
申请人： Yong Tae Moon
发明人： Yong Tae Moon
IPC分类号： H01L21/30
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02483 , H01L21/02538 , H01L21/0254 , H01L21/02614 , H01L33/007
摘要： Provided is a method for fabricating a light emitting device. The method includes forming a gallium oxide layer; forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer; forming a non-conductive substrate on the second conductive type semiconductor layer; separating the gallium oxide layer forming a conductive substrate on the first conductive type semiconductor layer; and separating the non-conductive substrate.
摘要翻译：提供一种制造发光器件的方法。该方法包括形成氧化镓层; 在所述氧化镓层上形成第一导电型半导体层，有源层和第二导电型半导体层; 在所述第二导电型半导体层上形成非导电性基板; 在所述第一导电型半导体层上分离形成导电性基板的所述氧化镓层; 并分离非导电性基板。

4. 发明申请

US20120033444A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND DISPLAY DEVICE THEREWITH 有权
标题翻译：发光装置，发光装置包装及其显示装置
公开(公告)号：US20120033444A1
公开(公告)日：2012-02-09
申请号：US13178691
申请日：2011-07-08
申请人： Yong Tae Moon , Yong Seon Song , Jong hak Won , Jeong Sik Lee , Jung Hun Jang
发明人： Yong Tae Moon , Yong Seon Song , Jong hak Won , Jeong Sik Lee , Jung Hun Jang
IPC分类号： F21V7/22 , H01L33/04
CPC分类号： H01L33/04 , F21K9/00 , H01L33/405
摘要： A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.
摘要翻译：发光器件包括具有量子阱和量子阱的有源层，在有源层的一侧上的第一导电类型半导体层，在有源层的另一侧上的第二导电类型半导体层和布置在有源层之间的界面层所述有源层和所述第一导电类型半导体层或所述有源层和所述第二导电类型半导体层之间，其中所述界面层包括设置在所述势垒层之间的阻挡层和基底层，其中每个所述势垒层的能带隙增加从第一导电类型半导体层或第二导电类型半导体层到有源层方向为线性，并且势垒层的最大能量带隙彼此不同。

5. 发明申请

US20120015466A1 METHOD FOR FABRICATING LIGHT EMITTING DEVICE 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20120015466A1
公开(公告)日：2012-01-19
申请号：US13240965
申请日：2011-09-22
申请人： Yong Tae MOON
发明人： Yong Tae MOON
IPC分类号： H01L33/02
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02483 , H01L21/02538 , H01L21/0254 , H01L21/02614 , H01L33/007
摘要： Provided is a method for fabricating a light emitting device. The method includes forming a gallium oxide layer; forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer; forming a non-conductive substrate on the second conductive type semiconductor layer; separating the gallium oxide layer forming a conductive substrate on the first conductive type semiconductor layer; and separating the non-conductive substrate.
摘要翻译：提供一种制造发光器件的方法。该方法包括形成氧化镓层; 在所述氧化镓层上形成第一导电型半导体层，有源层和第二导电型半导体层; 在所述第二导电型半导体层上形成非导电性基板; 在所述第一导电型半导体层上分离形成导电性基板的所述氧化镓层; 并分离非导电性基板。

6. 发明申请

US20110291127A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE 有权
标题翻译：发光装置和用于制造发光装置的方法
公开(公告)号：US20110291127A1
公开(公告)日：2011-12-01
申请号：US13192985
申请日：2011-07-28
申请人： Dae Seob HAN , Yong Tae MOON
发明人： Dae Seob HAN , Yong Tae MOON
IPC分类号： H01L33/32 , H01L33/48
CPC分类号： H01L33/04 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.
摘要翻译：公开了一种发光器件，其包括具有第一导电半导体层，有源层和第二导电半导体层的发光结构，其中所述有源层设置在所述第一导电半导体层和所述第二导电半导体层之间，以及包括多个阱层和至少一个势垒层，其中所述阻挡层包括第一氮化物层和设置在所述第一氮化物层上的第二氮化物层，并且其中所述第一氮化物层具有比所述第二氮化物更大的能带隙而第二氮化物层的能带隙大于每个阱层的能带隙。

7. 发明申请

US20110249468A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置和发光装置包装
公开(公告)号：US20110249468A1
公开(公告)日：2011-10-13
申请号：US13080706
申请日：2011-04-06
申请人： Yong Tae Moon
发明人： Yong Tae Moon
IPC分类号： F21V7/22 , H01L33/50
CPC分类号： H01L33/08 , H01L33/32 , H01L33/50 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer to emit a light of a first wavelength; and a re-emission layer disposed on the light emitting structure, the re-emission layer comprising a nitride semiconductor, wherein the re-emission layer absorbs the light of the first wavelength range and the re-emission layer emits a light of a second wavelength range longer than the first wavelength range, and the re-emission layer is configured of multi layers having different indium (In) compositions, respectively, and the indium content in the multi-layer is largest in a top layer of the multi-layers.
摘要翻译：发光器件包括发光结构，其包括第一导电类型半导体层，第二导电类型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以发射第一波长的光 ; 以及设置在所述发光结构上的再发射层，所述再发射层包括氮化物半导体，其中所述再发射层吸收所述第一波长范围的光，并且所述再发射层发射第二波长的光范围比第一波长范围长，并且再发射层分别由具有不同铟（In）组成的多层构成，多层中的铟含量在多层顶层中最大。

8. 发明申请

US20110241053A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110241053A1
公开(公告)日：2011-10-06
申请号：US13159157
申请日：2011-06-13
申请人： Yong Tae MOON
发明人： Yong Tae MOON
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/0095 , H01L33/22
摘要： Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.
摘要翻译：公开了一种发光器件。发光器件包括发光结构，其包括产生第一光的有源层，有源层上的第一导电半导体层和有源层上的第二导电半导体层，使得有源层设置在第一和第二之间导电半导体层，其中发光结构的一部分被注入至少一个从第一光产生第二光的元件。

9. 发明申请

US20110198562A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110198562A1
公开(公告)日：2011-08-18
申请号：US13023013
申请日：2011-02-08
申请人： Yong Tae Moon , Jeong Soon Yim , Jeong Sik Lee
发明人： Yong Tae Moon , Jeong Soon Yim , Jeong Sik Lee
IPC分类号： H01L33/06
CPC分类号： H01L33/007 , H01L33/16 , H01L33/20 , H01L33/32 , H01L33/44 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including β-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate.
摘要翻译：提供了一种发光装置。在一个实施方案中，一种发光器件包括：包含“...”的衬底; 在所述基板上的发光结构，所述发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 发光结构上的电极; 以及在所述基板的侧表面区域处的多孔层。

10. 发明申请

US20110147771A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM 有权
标题翻译：发光装置，发光装置包装和照明系统
公开(公告)号：US20110147771A1
公开(公告)日：2011-06-23
申请号：US12940718
申请日：2010-11-05
申请人： Yong Tae MOON
发明人： Yong Tae MOON
IPC分类号： H01L33/02
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02538 , H01L21/0254 , H01L33/007 , H01L33/12 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an oxide including gallium aluminum over a gallium oxide substrate, a nitride including gallium aluminum over the oxide including gallium aluminum, and a light emitting structure over the nitride including gallium aluminum.
摘要翻译：公开了一种发光器件，发光器件封装和照明系统。发光器件包括在氧化镓衬底上的包括镓铝的氧化物，包括镓铝在内的氧化物包括镓铝的氮化物，以及包括镓铝在内的氮化物上的发光结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式