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1. 发明授权

US08728841B2 Method of manufacturing ESD resistant nitride semiconductor light emitting device with enhanced light extraction efficiency 有权
标题翻译：制造具有增强的光提取效率的耐ESD氮化物半导体发光器件的方法
公开(公告)号：US08728841B2
公开(公告)日：2014-05-20
申请号：US13365056
申请日：2012-02-02
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

2. 发明授权

US08592690B2 Circuit board having circumferential shielding layer 失效
标题翻译：具有圆周屏蔽层的电路板
公开(公告)号：US08592690B2
公开(公告)日：2013-11-26
申请号：US13241300
申请日：2011-09-23
申请人： John Chow , Yueh-Shan Shih , Yong-Chun Xu , Jian-She Hu
发明人： John Chow , Yueh-Shan Shih , Yong-Chun Xu , Jian-She Hu
IPC分类号： H05K1/11
CPC分类号： H05K1/0218 , H05K3/4614 , H05K2201/0715 , H05K2201/0723 , H05K2201/09481 , H05K2201/09981
摘要： A circuit board (100) includes a first shielding layer (20) extending horizontally, an accessorial shielding layer, a signal circuit layer (3) positioned between the first shielding layer and the accessorial shielding layer, and a circumferential shielding layer (6) surrounding the circuit board and electrically connecting with the first shielding layer and the accessorial shielding layer to improve shielding effect.
摘要翻译：电路板（100）包括水平延伸的第一屏蔽层（20），辅助屏蔽层，位于第一屏蔽层和辅助屏蔽层之间的信号电路层（3）和周围屏蔽层（6）电路板并与第一屏蔽层和辅助屏蔽层电连接以改善屏蔽效果。

3. 发明申请

US20130196987A1 MACROCYCLIC COMPOUNDS USEFUL AS PHARMACEUTICALS 审中-公开
标题翻译：大环化合物作为药物有用
公开(公告)号：US20130196987A1
公开(公告)日：2013-08-01
申请号：US13663857
申请日：2012-10-30
申请人： Roch Boivin , Kenichi Chiba , Jesse Chow , Hong Du , Yoshihito Eguchi , Masanori Fujita , Masaki Goto , Fabian Gusovsky , Jean-Christophe Harmange , Atsushi Inoue , Yimin Jiang , Megumi Kawada , Takatoshi Kawai , Yoshiyuki Kawakami , Akifumi Kimura , Makoto Kotake , Yoshikazu Kuboi , Charles-Andre Lemelin , Xiang-Yi Li , Tomohiro Matsushima , Yoshiharu Mizui , Kenzo Muramoto , Hideki Sakurai , Yong-Chun Shen , Hiroshi Shirota , Mark Spyvee , Isao Tanaka , John (Yuan) Wang , Satoshi Yamamoto , Naoki Yoneda
发明人： Roch Boivin , Kenichi Chiba , Jesse Chow , Hong Du , Yoshihito Eguchi , Masanori Fujita , Masaki Goto , Fabian Gusovsky , Jean-Christophe Harmange , Atsushi Inoue , Yimin Jiang , Megumi Kawada , Takatoshi Kawai , Yoshiyuki Kawakami , Akifumi Kimura , Makoto Kotake , Yoshikazu Kuboi , Charles-Andre Lemelin , Xiang-Yi Li , Tomohiro Matsushima , Yoshiharu Mizui , Kenzo Muramoto , Hideki Sakurai , Yong-Chun Shen , Hiroshi Shirota , Mark Spyvee , Isao Tanaka , John (Yuan) Wang , Satoshi Yamamoto , Naoki Yoneda
IPC分类号： C07D405/12 , C07D491/044 , C07D313/00
CPC分类号： C07D405/12 , A61K31/335 , A61K31/36 , A61K31/395 , C07D231/12 , C07D233/56 , C07D249/08 , C07D313/00 , C07D401/12 , C07D491/04 , C07D491/044 , C07D493/04 , Y02A50/411
摘要： The present invention provides compounds, methods for the synthesis thereof and methods for the use thereof in the treatment of various disorders including inflammatory or autoimmune disorders, and disorders involving malignancy or increased angiogenesis.
摘要翻译：本发明提供了化合物，其合成方法及其用于治疗各种疾病（包括炎性或自身免疫性疾病）以及涉及恶性肿瘤或增加血管生成的疾病的方法。

4. 发明授权

US08426880B2 Semiconductor light emitting device and method of manufacturing the same 失效
公开(公告)号：US08426880B2
公开(公告)日：2013-04-23
申请号：US12155877
申请日：2008-06-11
申请人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
发明人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/16 , H01L33/22
摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

5. 发明授权

US08269242B2 Semiconductor light emitting device having surface plasmon layer 有权
标题翻译：具有表面等离子体层的半导体发光器件
公开(公告)号：US08269242B2
公开(公告)日：2012-09-18
申请号：US12628467
申请日：2009-12-01
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围与n型和p型半导体层中的至少一种绝缘。半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

6. 发明申请

US20120171898A1 MODULAR JACK WITH MAGNETIC MODULE OD REDUCED PROFILE 有权
标题翻译：具有磁性模块的模块式插孔减少轮廓
公开(公告)号：US20120171898A1
公开(公告)日：2012-07-05
申请号：US13241294
申请日：2011-09-23
申请人： BING WANG , YONG-CHUN XU
发明人： BING WANG , YONG-CHUN XU
IPC分类号： H01R13/648 , H01R13/66
CPC分类号： H01R13/6658 , H01R13/6633 , H01R24/64
摘要： An electrical connector (100) includes an insulative housing (11), a terminal module received in the insulative housing and a shielding shell (17) enclosing the insulative housing. The terminal module having an inner circuit board (130) and a number of magnetic coils (132). The inner circuit board defines a groove (1300). Each of magnetic coils includes a core and a number of wires wound on the core and electrically connected with the inner circuit board. Each magnetic coil is at least partially received in the groove to save space for reducing profile of the connector.
摘要翻译：电连接器（100）包括绝缘壳体（11），容纳在绝缘壳体中的端子模块和封闭绝缘壳体的屏蔽壳体（17）。所述端子模块具有内部电路板（130）和多个电磁线圈（132）。内部电路板限定凹槽（1300）。每个磁性线圈包括芯和缠绕在芯上并与内部电路板电连接的多根电线。每个电磁线圈至少部分地被容纳在槽中以节省用于减小连接器轮廓的空间。

7. 发明申请

US20120129289A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20120129289A1
公开(公告)日：2012-05-24
申请号：US13365056
申请日：2012-02-02
申请人： Jeong Tak OH , Yong Chun Kim
发明人： Jeong Tak OH , Yong Chun Kim
IPC分类号： H01L33/02
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

8. 发明授权

US08134170B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08134170B2
公开(公告)日：2012-03-13
申请号：US12620260
申请日：2009-11-17
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

9. 发明授权

US08030640B2 Nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08030640B2
公开(公告)日：2011-10-04
申请号：US12618164
申请日：2009-11-13
申请人： Jeong Tak Oh , Yong Chun Kim , Dong Joon Kim , Dong Ju Lee
发明人： Jeong Tak Oh , Yong Chun Kim , Dong Joon Kim , Dong Ju Lee
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/18 , H01L33/20 , H01L33/32
摘要： A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.
摘要翻译：氮化物半导体发光器件包括衬底，设置在衬底上的第一导电型氮化物半导体层，并且包括放置在其顶表面中的多个V凹坑，形成在每个V形衬底的顶点区域中的硅化合物，凹坑，设置在第一导电型氮化物半导体层上并包括符合多个V凹坑形状的凹陷的有源层和设置在有源层上的第二导电型氮化物半导体层。氮化物半导体发光器件在接收到静电时实现了高静电放电（ESD）的抗性，因为电流集中在V型凹坑中，并且硅化合物置于由晶格缺陷引起的位错上。

10. 发明授权

US07993163B2 Modular jack connector having improved magnetic module 有权
标题翻译：具有改进的磁性模块的模块化插座连接器
公开(公告)号：US07993163B2
公开(公告)日：2011-08-09
申请号：US12769686
申请日：2010-04-29
申请人： Li-Chun Wu , Chao-Tung Huang , Yueh-Shan Shih , Jie Zhang , Yong-Chun Xu , Jian-She Hu
发明人： Li-Chun Wu , Chao-Tung Huang , Yueh-Shan Shih , Jie Zhang , Yong-Chun Xu , Jian-She Hu
IPC分类号： H01R13/66
CPC分类号： H01R13/6466 , H01F27/2804 , H01F2017/0093 , H01R13/659 , H01R13/6625 , H01R13/6633 , H01R13/6658 , H01R13/7175 , H01R13/719 , H01R24/64
摘要： A modular jack connector (100) includes a contact module (2) having a paddle board (21) and a magnetic module (23). The magnetic module includes a number of magnetic cores (231) embedded in the paddle board, and a number of PCB layout traces (232, 233) arranged in each side face of the paddle board. The PCB layout traces on each side face includes a primary group of PCB layout traces (232a, 233a) having one group of tips (2322, 2331) extending to a position adjacent to corresponding magnetic core to form a magnetic field and another group of tips (2321, 2332) connected to a conductive section (2111, 2121) of the paddle board, and a secondary group of PCB layout traces (232b, 233b) having one group of tips (2323, 2333) extending to a position adjacent to corresponding magnetic core to form a magnetic field and another group of tips (2324, 2334) connected to vias of the paddle board.
摘要翻译：模块化插座连接器（100）包括具有桨板（21）和磁性模块（23）的接触模块（2）。磁性模块包括嵌入在该板板中的多个磁芯（231）和布置在该桨板的每个侧面中的多个PCB布局轨迹（232,233）。每个侧面上的PCB布局迹线包括一组PCB布局迹线（232a，233a），其具有一组尖端（2322,2331），其延伸到与相应磁芯相邻的位置以形成磁场，另一组尖端（2321,2332），其连接到所述桨板的导电部分（2111,2121），以及具有一组尖端（2323,2333）的第二组PCB布局迹线（232b，233b），其延伸到与相应的相邻的位置磁芯以形成磁场，另一组连接到桨板的通孔的尖端（2324,2334）。

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